• Title/Summary/Keyword: PZT Ceramics

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Effect of MnO2 on piezoelectric properties of PSN-PZT ceramics for piezoelectric actuator applications (압전 액츄에이터용 PSN-PZT 세라믹스의 압전 특성에 미치는 MnO2 첨가 효과)

  • Choi, J.W.;Song, K.H.;Kim, H.J.;Yoon, S.J.;Yoo, K.S.
    • Journal of Sensor Science and Technology
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    • v.16 no.2
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    • pp.120-125
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    • 2007
  • The effect of $MnO_{2}$ as a sintering additive on the microstructures and the piezoelectric properties, especially mechanical quality factor, of 0.05 Pb$(Sb_{0.5}Nb_{0.5})O_{3}$-0.95 Pb$(Zr_{0.52}Ti_{0.48})O_{3}$ (PSN-PZT) piezoelectric ceramics was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the sample were examined using XRD and FE-SEM, respectively. A study on the influence of $MnO_{2}$ additives on the dielectric and piezoelectric properties showed that the $MnO_{2}$-added PSN-PZT system exhibited a high mechanical quality factor and well-situated piezoelectric properties. The optimized results of $d_{33}$ (319 pC/N), $k_{p}$ (55 %), and $Q_{m}$ (751.24) were obtained at 0.2 wt% $MnO_{2}$ added PSN-PZT piezoelectrics.

Effect of CeO2 on piezoelectric properties of PSN-PZT ceramics for a hypersonic sound speaker application (지향성 스피커용 PSN-PZT 세라믹스의 압전 특성에 미치는 CeO2 첨가 효과)

  • Choi, J.B.;Song, K.H.;Kim, H.J.;Hwang, S.I.;Yoo, K.S.
    • Journal of Sensor Science and Technology
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    • v.17 no.2
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    • pp.127-132
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    • 2008
  • The effect of $CeO_2$ as a sintering additive on the microstructure and the piezoelectric property of yPb$(Sb_{0.5}Nb_{0.5})O_3$-(1-y)Pb$(Zr_{0.52}Ti_{0.48})O_3$ ($0{\leq}y{\leq}0.1$, PSN-PZT) for a hypersonic sound speaker (HSS) application was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the samples were examined using XRD and FE-SEM, respectively. Study on the influence of $CeO_2$ additives on the dielectric and piezoelectric properties indicated that the $CeO_2$-added PSN-PZT system had a high piezoelectric properties. The optimized results of ${\varepsilon}_r=1209$, $K_p$=52% $d_{33}$=351(pC/N) and $Q_m$=1230.16 were obtained at 0.4 wt.% $CeO_2$-added PSN-PZT.

A Dual Mode Ultrasonic Transducer with a PZT Piezoelectric Seramics (PZT 압전 세라믹스를 사용한 2 중 모우드 초음파 변환기)

  • 김연보;노용래;남효덕
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.1-4
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    • 1995
  • The most of conventional ultrasonic transducers are constructed to generate either longitudinal or shear waves, but not both of them. We investigated the mechanism of dual mode transducers that generates both of the longitudinal and shear waves simultaneously with a single PZT element. The study has been aimed to find the desired cut by the examining the piezoelectric properties. Theory predicts that a mixed P/S mode transducer can be constructed using a related Z-cut of a PZT ceramics. We studied the performance of a PZT element as a function of its rotation angle so that its efficiency is optimized to excite the two waves equally strongly. The results are verified by checking the impedance variation of the element with Finite Element Methods, and chocking the wave form by pulse-echo test simulation. Based upon the theory a rotated Z-cut was prepared and a transducer were fabricated. Validity of the theory calculation is verified through the

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The Influence of External Stress on the Degradation Phenomena of PZT Ceramics (외부응력에 의한 PZT압전세라믹스의 열화현상)

  • Im, Jin-Ho;Lee, Jun-Hyeong;Kim, Jin-Ho;Jo, Sang-Hui
    • Korean Journal of Materials Research
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    • v.4 no.4
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    • pp.439-444
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    • 1994
  • The influence of the direction of applied compressive stress on degradation mechanism ofpoled PZT sample was studied. When compressive stress perpendicular to poling direction was appliedon poled PZT sample, the degradation phenomena was explained by the diffusion of space chargepolarization. On the contrary, compressive stress parallel to poling direction was applied, it wasexplained by the rearrangement of 90" domains. As the grain size increased, the degradation phenomenawas promoted. It is attributed to different internal stress due to difference of grain size. of grain size.

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Synthesis and Sintering Characteristics of Piezolelectric Ceramics PZT by Coprecipitation Method (공침법에 의한 압전 세라믹 PZT의 합성 및 소결거동)

  • Lee, S.H.;Park, J.H.;SaGong, G.
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.213-216
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    • 1991
  • In this study, PZT powder was synthesized by coprecipitation method us ing $Pb(NO_3)2$, $ZrOCl_2{\cdot}8H_2O$ and $TiCl_4$ as starting raw materials. Homogeneous and fine-grained PZT powder was obtained by the coprecipitation method. PZT powder was characterized by DTA, SEM and XRD analysis. The XRD peaks were observed at $600(^{\circ}C)$ and over.

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Effect of Excess and Deficiency of PbO on the Sintering and Electrical Properties of PZT Ceramics (PbO 과잉 및 결핍이 PZT 세라믹스의 소결 및 전기적 특성에 미치는 영향)

  • 임진호;김진호;조상희
    • Journal of the Korean Ceramic Society
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    • v.31 no.6
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    • pp.581-586
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    • 1994
  • Effect of excess and deficiency of PbO on the sintering and electrical properties of tetragonal Pb(Zr0.5Ti0.5)O3 were investigated. Fired density revealed maximum value with 4 wt% of excess PbO, and decreased with increasing amount of both excess and deficient PbO. Grain size increased with excess PbO, and decreased with deficiency of PbO. It appeared that excess PbO forms a liquid phase to enhance grain growth and completely volatilizes after sintering, whereas ZrO2 particles formed in PbO-deficient PZT inhibit grain growth. The change in the values of the equivalent circuit elements of PZT corresponded well with thar of porosity formed by excess and deficiency of PbO; kp, Co and Cm decreased while Qm, Rm and Lm increased conosiderably with porosity. This change was more pronounced in PbO-deficient type probably due to change in Zr/Ti ratio of PZT.

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The Effect of Non-180$^{\circ}$Domain on the Piezoelectric and Dielectric Properties of the PSN-PZT Ceramics under Alternating Strong Electric Field (교류강전계가 PSN-PZT 압전체의 압전 및 유전 특성에 미치는 non-180$^{\circ}$분역 효과)

  • 윤만순;채홍인
    • Journal of the Korean Ceramic Society
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    • v.37 no.9
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    • pp.871-878
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    • 2000
  • 본 연구는 3mol% Pb(Sb$_{1}$2/Nb$_{1}$2/)O$_3$가 첨가된 상경계 영역의 Pb(Zr,Ti)O$_3$(PSN-PZT) 세라믹스에 대하여 RT66A와 광섬유센서를 이용하여, 교류강전계 하에서 압전 및 유전특성을 조사하였다. PSN-PZT 세라믹스의 압전 및 유전 특성에 미치는 non-180$^{\circ}$분역 재배열의 영향을 평가하기 위하여 RT66A와 MTI-2000 Fotonic$^{TM}$ sensor를 이용하여 인가전계와 주파수의 함수로 전계유기변위를 측정하였다. 그 결과, 교류강전계 하에서 전계유기변위는 강전계, 저주파수에서 큰 이력현상을 나타내고, 전계유기변위로부터 결정된 유효압전상수는 주파수가 감소할수록 증가하는 거동을 나타내고 있으며, 이러한 거동은 non-180$^{\circ}$분역 재배열의 영향으로 해석되었다.

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Piezoelectric characteristics of PZT-PFN and $Cr_2O_3$ modified PZT-PFN ceramics used in high power transducer (고출력 변환기용 PZT-PFN계 및 $Cr_2O_3$ 변성 PZT-PFN계의 압전특성)

  • 손은영;박창엽;홍재일
    • Electrical & Electronic Materials
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    • v.3 no.4
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    • pp.279-286
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    • 1990
  • 고출력 변환기재료로 이용하기 위하여 유전손실에 기인한 압전 특성의 열화를 방지할 수 있는 큐리점이 비교적 높은 Pb$_{2}$FeNbO$_{6}$의 제3성분을 PZT에 고용한 고용체에서 양호한 압전특성을 갖는 조성을 찾고, 기계적 품질계수를 개선하고자 Cr$_{2}$O$_{3}$를 첨가한 변성 3성분계에 대하여 조사하였다. 그 결과, 전기기계결합계수가 가장 큰 조성은 0.05Pb(FeNb)O$_{3}$-0.4275PbTiO$_{3}$-0.5225 PbZrO$_{3}$이었으며 이조성의 기계적 품질계수, 상전이점은 170, 399.deg.C이었으며 이조성에 0.1wt% Cr$_{2}$O$_{3}$첨가한 변성 3성분계의 기계적 품질계수는 320으로 개선되었다.

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The structural Properties of the Pb$(Zr{_{0.7}}Ti_{0.3})O_3$ Ceramics Thin Films by RF Sputtering method (RF Sputtering method를 이용한 Pb$(Zr{_{0.7}}Ti_{0.3})O_3$ 세라믹스 박막의 구조적 특성)

  • Nam, Sung-Pill;Lee, Sang-Chul;Lim, Sung-Su;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1586-1588
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    • 2003
  • The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.

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