• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.80-83
• /
• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

• Proceedings of the Acoustical Society of Korea Conference
• /
• autumn
• /
• pp.353-356
• /
• 2004

단일 PZT보다 전기적 및 음향 특성비 우수한 Polymer/PZT 압전복합재료를 설계하고, 이것으로 초음과 트랜스듀서를 제작하여 음향특성을 고찰하였다. 폴리머의 체적 수축율 조정을 위한 충진제를 선정하고, PZT의 부피분율출 $30\~80\%$ 변화시켜 이것에 따른 전기적 특성 및 음향 특성을 비교, 검토하였다. PZT/Polymer 압전복합재료의 전기기계결합계수$(=k_{t})$는 단일 PZT 보다 우수하게 나타났으며, 음향 임피던스는 $3\~7[Mrayl]$ 정도로 낮게 조정할 수 있었다. 또한 Pulse-echo법으로 음향 송수신특성을 측정한 길과, 단일의 PZT를 사용한 경우보다 높은 진폭과 넓은 대역폭이 측정되어 음향 특성이 우수한 것을 확인 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.370-371
• /
• 2006

본 연구에서는 PZT박막의 강 유전 캐패시터 제작을 위한 연구로, 4-inch크기의 $SiO_2$/Pt/Ti/Si가 증착된 웨이퍼를 습식 식각하여 $SiO_2$ 패턴(0.8um)을 형성하였고, PZT박막의 캐패시터 제작을 위해 패턴 웨이퍼에 $Pb_{1.1}$($Zr_{0.52}Ti_{0.48}$)$O_3$조성을 갖는 PZT를 증착하였다. $600^{\circ}C$에서 열처리 후 페로브스카이트 구조를 가지는 PZT 박막의 CMP(chemical mechanical polishing) 공정에 따른 전기적 특성을 연구하였다. 강유전체 소자 적용을 위한 CMP 공정으로 제조된 PZT 박막 캐패시터의 P-E특성, I-V특성, 피로특성 등의 전기적 특성을 측정하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.254-262
• /
• 1996

$Pb(Zr_{0.52}Ti_{0.48})O_{3}$ (PZT) ceramics were prepared with uniform particle size of $1~3\;\mu\textrm{m}$ by hydrothermal synthesis at various conditions, such as hydrothermal reaction temperature, concentration of mineralizer and reaction time. PZT ceramics were formed above $180^{\circ}C$ for 2 hrs reaction using 10 M KOH solution as a mineralizer, but reaction condition was slightly different by starting materials. Morphology and characterization of PZT powders were investigated by XRD and SEM. By increasing the reaction temperature, KOH concentration and reaction time, the composition of the PZT phase tended to be homogeneous phase.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.664-669
• /
• 2003

This paper proposes a swing-arm type dual-stage actuator, which consists of a PZT actuator for fine motion and a VCM(Voice Coil Motor) for coarse motion, for SFF ODD(Small Form Factor Optical Disk Drive), in order to achieve fast access speed and precise track following control. We focus our attention on the design and control of the PZT actuator, because there have been a lot of previous researches related to the VCM and dual-stage actuators. Due to the dual cantilever structure, the PZT actuator can generate precise translational tracking motion at its tip where optical pickup is attached at, and the effect of hysteric behavior of the PZT element is reduced. The dynamic model of the PZT actuator is derived by using the Hamilton's principle, and verified by comparing with the experimental frequency response. The sliding mode control is designed in order to be robust against modeling uncertainties. Simulations and experimental results confirm the effectiveness of the suggested control scheme.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.1
• /
• pp.24-29
• /
• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Proceedings of the KIEE Conference
• /
• 1987.11a
• /
• pp.254-256
• /
• 1987

In this study, piezoelectric composite materials of O-3 connectivity were made by, mixing FZT ceramics with polymers, the dependence of volume % PZT and poling condition for dielectric and piezoelectric properties were investigated. The measured value of dielectric constant was dependent on the volume % PZT, which was exponentially increased with volume %PZT. Piezoelectric coefficient ($\bar{d}_{33}$) was exponentially increased with volume % PZT. Voltage coefficient ($\bar{g}_{33}$) was decreased with volume % PZT, but it was larger than that of single phase PZT ($\bar{g}_{33}$) because the dielectric constant ($\bar{\varepsilon}_{33}$) of composite materials was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.40-43
• /
• 1996

Substrates of SAW filter are mainly single crystal such as LiNbO$_3$, LiTaO$_3$. However, fabrication of crystal is difficult and cost is very high. In this study, crystal was substituted for piezoelectric ceramics which has simple fabrication process. The same SAW filter mask was photolithographed on crystal(LiNbO$_3$) substrate and ceramic(PZT4, PZT5A and PZT8) substrate in order to compare experimental value with theoretical value. The difference of center frequency was only 3.7%. PZT8 showed good bandwidth properties. It is considered that PZT8 has higher mechanical quality factor and propagation velocity than PZT4, PTT5A.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.103-104
• /
• 2006

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.39-42
• /
• 2000

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.