• 한국군사과학기술학회지
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• 제1권1호
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Journal of Astronomy and Space Sciences
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• 제33권3호
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• pp.185-196
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• 2016

New multiband BVRI light curves of NSVS 1461538 were obtained as a byproduct during the photometric observations of our program star PV Cas for three years from 2011 to 2013. The light curves indicate characteristics of a typical W-subtype W UMa eclipsing system, displaying a flat bottom at primary eclipse and the O'Connell effect, rather than those of an Algol/b Lyrae eclipsing variable classified by the northern sky variability survey (NSVS). A total of 35 times of minimum lights were determined from our observations (20 timings) and the SuperWASP measurements (15 ones). A period study with all the timings shows that the orbital period may vary in a sinusoidal manner with a period of about 5.6 yr and a small semi-amplitude of about 0.008 day. The cyclical period variation can be interpreted as a light-time effect due to a tertiary body with a minimum mass of 0.71 M_⊙. Simultaneous analysis of the multiband light curves using the 2003 version of the Wilson-Devinney binary model shows that NSVS 1461538 is a genuine W-subtype W UMa contact binary with the hotter primary component being less massive and the system shows a low mass ratio of q(m_c/m_h)=3.51, a high orbital inclination of 88.7°, a moderate fill-out factor of 30 %, and a temperature difference of ΔT=412 K. The O'Connell effect can be similarly explained by cool spots on either the hotter primary star or the cool secondary star. A small third-light corresponding to about 5 % and 2 % of the total systemic light in the B and V bandpasses, respectively, supports the third-body hypothesis proposed by the period study. Preliminary absolute dimensions of the system were derived and used to look into its evolutionary status with other W UMa binaries in the mass-radius and mass-luminosity diagrams. A possible evolution scenario of the system was also discussed in the context of the mass vs mass ratio diagram.