• 한국세라믹학회지
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• 제22권5호
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• pp.54-60
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• 1985

This study is concerned with the mechanism of PTCR in $BaTiO_3$ ceramics doped by $Nb^{+5}$ Since the vacancy compensation layer at the grain boundary of n-type doped $BaTiO_3$ ceramics has been known as a major factor for surface state to give PTCR phenomena the dependence of PTCR on such vacancy compensation layer was attemped to be confirmed experimentally in this study. For the experiment quenching and annealing at various temperature after sintering were adopted to induce difference in the thickness of vacancycompensation layer so as to exihibit difference of PTCReffect eachother. The TEX>$Ba^{++}$ cocentration at the grain and grain boundary was measured by EDAX to confirm the formation of the vacancy compensation layer. It was found that i)either decrease in the temperature for quenching ii) or increase in the temperature for annealing improves the PTCR effect clearly iii)increase in TEX>$Ba^{++}$ concentration at the grain boundary results in the improvement of PTCR effect. It was concluded that all the experimental results gave the evidence for the dependence of PTCR effect on the vacancy compensation layer at the grain boundary which had been induced possibly by the $Ba^{++}$ diffusion by the heat treatment conducted.

• 한국세라믹학회지
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• 제31권2호
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.

• 한국세라믹학회지
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• 제24권6호
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• pp.579-585
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• 1987

The effects of flux KCl and dopant Nb2O5 on the PTCR characteristics of BaTiO3 prepared by molten salt synthesis method have been investigated. As the amount of dopant Nb2O5 is over the solubility limit in BaTiO3, the room-temperature resistivity increases, and the PTCR effect and the grain size decrease. The variation of the amount of flux KCl slightly influences on the room-temperature resistivity, PTCR effect and grain size in Nb2O5 doped BaTiO3, but BaTiO3 ceramics prepared by the method of molten salt synthesis show larger PTCR effect than those of conventional calcining of mixed oxides.

• 한국세라믹학회지
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• 제39권1호
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• pp.16-20
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• 2002

Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.

• 한국세라믹학회지
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• 제30권8호
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• pp.609-614
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• 1993

Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{\circ}C$ and 145$0^{\circ}C$ exhibited PTCR effect between -5$0^{\circ}C$ and 35$0^{\circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.

• 대한화학회지
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• 제39권10호
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• pp.806-811
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• 1995

정온도저항계수(PTCR) 특성을 지닌 $(Ba,Sr)_{1-x}Y_xTiO_3$(x = 0.001-0.009, BSYT)를 옥살산공침범으로 합성하여 이트륨 혼입량 변화에 따른 전기적 특성을 관찰하였다. 온도변화에 따른 저항을 측정한 결과 이트륨의 농도가 0.3mol%로 증가할때까지는 큰 PTCR 효과를 나타낸 반면 농도가 0.5mol% 이상에서는 적은 PTCR 효과를 나타내었다. 상전이 온도($T_c$) 이상에서 온도와 $1{\varepsilon}$m(T)의 관계를 나타낸 도시에 의하면 유전상수의 변화가 Curie-Wiess 법칙에 잘 따름을 알 수 있었다. 측정한 비저항과 유전상수로부터 계산한 전위장벽위 높이를 온도에 따라 도시한 결과 PTCR 효과와 마찬가지로 이트륨의 혼입량이 0.3mol%로 증가할때까지는 높은 전위장벽이 유지되나 0.5mol% 이상에서는 비교적 낮은 전위장벽을 나타내었다.

• 폴리머
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• 제26권3호
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• pp.367-374
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• 2002

본 연구에서는 나노 입자의 카본블랙을 결정성 고분자에 분산시켜 특정한 온도에서 저항이 급격하게 증가하는 positive temperature coefficient resistance (PTCR) 특성을 연구하였다. 열가소성 수지를 이용한 PTCR 소재를 열처리에 의하여 고분자의 큐리온도를 조절할 수 있었다. 나노입자 카본블랙이 고분자 구조내에 고르게 분산이 되지 않고, 카본블랙의 함량이 과다하면 negative temperature coefficient resistance (NTCR) 현상이 발생하였다. 카본블랙의 함량과 내부전압을 조절함에 따라 발열 온도를 선정할 수 있었다. 카본블랙의 함량에 따라 전기 전도성이 다르게 나타났으며, 20 wt% 이상에서는 저항이 거의 일정하게 나타난다는 것을 확인하였다. 본 연구에서 제조된 PTCR 소재는 반복적인 가열 냉각에 따른 상온에서의 초기 저항의 변화가 거의 없어 재현성을 확인하였으며, 초기의 낮은 저항에 의한 순간적인 발열에 의하여 저온에서의 PTCR 성능이 향상되었다.

• 한국세라믹학회지
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• 제32권5호
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• pp.567-574
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• 1995

The effect of MnO2 addition to 0.1mol% Sb2O3-doped BaTiO3 ceramics on microstructure and PTCR characteristics was studied. The PTCR characteristics was observed when 0.01 and 0.02 wt% MnO2 were added and sintered at 132$0^{\circ}C$ for 1 hour. The characteristics can be explained by the changes in the number and size of the abnormal grain growth due to the liquid phase during sintering. when the amount of MnO2 addition was 0.03 wt%, the sample showed NTCR characteristics with room-temperature resistivity over 109 Ωm regardless of the sintering temperature. This behavior can be described by the microstructure change due to the abnormal grain growth and charge compensation effect by MnO2 added. The room-temperature resistivity was increased as the amount of MnO2 was increased. And the specific resistivity ratio (pmax/pmin) showed maximum at 0.02wt% MnO2.

• 한국세라믹학회지
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• 제22권4호
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• pp.61-65
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• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.

• 한국세라믹학회지
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• 제25권1호
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• pp.42-48
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• 1988

Commercially available PTCR (Postive Temperature Coefficient of Resistivity) ceramics which have low room temperature resistance, high PTC effect and temperature coefficient were prepared by La3+ doped semiconducting barium calcium titanate soild solutions. PTCR characteristics were remarkably improved by addition of AST (1/3 Al2O3$.$3/4SiO2$.$1/4TiO2) and MnCl2. That can be explained by formation of liquid phase during sintering and acceptor level on the intergranular layer. Resistivity anormaly increased with decreasing cooling rate. Optimum manufacturing conditions were cooling rate below 100$.$C/hr, Ca and Mn content of 4 mol% &, 0.09-0.12mol% respectively.