• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.13-17
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• 2009

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.118-119
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• 2005

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.166-166
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• 2007

PRAM (phase-change random access memory)은 전류 펄스 인가에 따른 기록매질의 비정질-결정질 간 상변화와 그에 동반되는 저항변화를 이용하는 차세대 비휘발성 메모리 소자로서 연구되어지고 있다. 본 논문에서는 $(Ge_2Sb_2Te_5)_{1-x}Se_x$ (x=0,0.05,0.1,0.15) 조성에 대한 벌크 및 박막시료를 제작하고 각 조성에 대한 상변화 특성을 분석하였다. XRD를 통해 열처리 온도에 따른 구조적 분석을 실시하였고 UV-Vis-IR spectrophotometer를 사용하여 박막의 광학적 특성을 분석하였다. 또한 각 조성의 결정화 속도를 비교하기 위해 static tester를 사용하여 레이저 펄스 시간에 대한 반사도 변화를 측정하였고 DSC를 통해 결정화 온도를 측정하였다.

• 한국재료학회지
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• 제18권2호
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• Journal of applied mathematics & informatics
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• 제8권2호
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• pp.387-401
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• 2001

If the distance between two vertices becomes longer after the removal of a vertex u, then u is called a hinge vertex. In this paper, a linear time sequential algorithm is presented to find all hinge vertices of an interval graph. Also, a parallel algorithm is presented which takes O(n/P + log n) time using P processors on an EREW PRAM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.135-135
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• 2009

• Journal of applied mathematics & informatics
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• 제5권1호
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• pp.141-152
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• 1998

Based on the geometric representation an efficient al-gorithm is designed to find all articulation points of a permutation graph. The proposed algorithm takes only O(n log n) time and O(n) space where n represents the number of vertices. The proposed se-quential algorithm can easily be implemented in parallel which takes O(log n) time and O(n) processors on an EREW PRAM. These are the first known algorithms for the problem on this class of graph.

• 한국음향학회지
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• 제10권5호
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• pp.20-26
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• 1991

본 논문은 병렬 병합 알고리즘 중에서 선형 리스트상에서의 병합 시키기 위한 알고리즘을 제시 하고자 하는데 있어서 다음 두가지에 그 주된 목적이 있다. 1) 병렬 병합 알고리즘을 위한 ADT 를 제시하고 있다. 2) 선형 리스트상에서 병합되어지는 MKLP 알고리즘을 제시코저 한다. 이때 mklp 방 법은 P(1<=P<=N)개의 프로세서를 이용하고 그리고 SIMD-SM(EREW-PRAM) 모델 상에 구현이 되는 병렬 병합 알고리즘을 구현코저 한다.

• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2004년도 가을 학술발표논문집 Vol.31 No.2 (1)
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• pp.517-519
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• 2004

본 연구는 날로 다양하고 복잡해지고 있는 임베디드 시스템에서 필수로 요구되는 운영체제의 주요 기술적 과제중 하나인 효율적으로 메모리를 사용할 수 있는 메모리 보호기능을 설계하여 리눅스 상에 구현하였다. 이는 현재 사용되고 있는 않은 임베디드 리눅스에 직접 적용하여 실제적인 메모리 관리 성능향상을 가져오며, 또한 차세대 메모리로 주목받고 있는 PRAM등 차세대 NVRAM에서의 필요성이 특히 부각된다는 점에서 그 중요성이 크다.