• Title/Summary/Keyword: PLT thin film

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Fabrication and characteristics of TFEL device using phosphor layer ZnS:Mn/$ZnS:TbF_{3}$ slatted structure (ZnS:Mn/$ZnS:TbF_{3}$ 적층구조의 형광층을 이용한 TFEL소자의 제작 및 그 특성)

  • Park, Kyung-Vin;Kim, H.W.;Bae, S.C.;Kim, Y.J.;Cho, K.H.;Kim, K.W.
    • Journal of Sensor Science and Technology
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    • v.6 no.1
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    • pp.63-71
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    • 1997

  • The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/$ZnS:TbF_{3}$ has been fabricated. Insulate layers used (Pb,La)$TiO_{3}$ and $SiO_{2}$ thin films. The emission color was white. The TFEL device employing ZnS:Mn/$ZnS:TbF_{3}(8000{\AA})$ stacked phosphor layers showed the threshold voltage of $78V_{rms}$. And the brightness of the TFEL device was $400{\mu}W/cm^{2}$ at the applied voltage of $100V_{rms}$. The emission spectrum of TFEL device had a wavelength from 450nm to 620nm. The manufactured devices can be a practical use as a TFEL devices of red, green and blue by using the color filters.

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