• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.218-221
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• 2011

We modified the optical properties of the $CuInS_2$ nanocrystal (NC) by alloying. Nanocrystals (NCs) with alloyed cores were synthesized by refluxing the as-synthesized $CuInS_2$ NCs with a mixture of cadmium acetate, zinc acetate and palmitic acid. The shift in emission wavelength of the NCs after shell layer formation was minimized by alloying. The photoluminescence (PL) spectra showed significant reduction of emission intensity. A detailed study on the emission process of NCs implies that the formation of shell layers with small lattice mismatch minimized the mismatch strain generated from the shell layers in contrast to core alloyed NCs. In particular, time-resolved PL spectra of the NCs showed a significant increase in the lifetime of excited carriers by modifying the band alignment of the NCs by modifying the shell composition.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.94-102
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• 1994

x- 0.51인 GaxIn1-x-P 에피층을 저압 MOCVD 성장법으로 TEGa(triethylgallium) TmIn(trimethylindium)등의 MO(metalorganic) 원료와 PH3(phosphine)를 사용하여 GaAs(100) 기판위에 성장하였다. 성장조건에 의한 표면 morphology 결정결함 성분비 PL spectra 운반자 농도와 이동도 및 DLTS spectra와 같은 성장층의 특성을 관찰하였다, $650^{\circ}C$의 성장온도와 V/III비, 즉 TEGa와 TMIn 두 원료의 유량에 대한 PH3 의유량변화에 아무런 영향을 받지 않음을 알 수 있었다. Ga0.51In0.49P에피층과 기판의 격자상수 차에 의한 격자 부정합 $\Delta$a /a0은 약 (3.7~8.9)x10-4 이었으며 실온과 5Kd서 에피층의 PL 피크 에너지는 각각 1.85eV와 1.9eV였다. 성장층의 운반자 농도와 이동도는 V/III 비에 따라 달라지 는데 그비가 120에서 220으로 증가함에 따라 농도는 1.8x1016cm-3에서 8.2x1016cm-3로 증가하였고 이동도 는 1010cm/V.sec에서 366cm/V.sec로 감소하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.877-880
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• 2003

A new class of light-emitting poly(p-phenylenevinylene) (PPV) derivatives. poly(9,9-di-n-octyfluorenyl- 2,7-vinylene) (PFV) and its PPV copolymers, poly[(9,9-di-n-octylfluorenyl-2,7-vinylene)-co-(1,4-phenylenevinylene)]s [Poly(FV-co-PV)s] was synthesized through Gilch polymerization, and their light-emitting properties were investigated. The copolymers showed almost the same UV absorption and PL emission as the PFV homopolymer, regardless of copolymer composition. Interestingly, the EL spectra of these devices were similar to the PL spectra of the corresponding polymer film. However, the EL devices constructed from the poly(FV-co-PV)s showed 10 times higher efficiency than the devices constructed from the PFV homopolymer. This higher efficiency is possibly a result of better charge carrier balance in the copolymer systems due to the lower HOMO level (${\sim}5.5$ eV) of the poly(FV-co-PV)s in comparison to the PFV (${\sim}5.7$ eV).

• ALGAE
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• v.30 no.2
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• pp.171-179
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• 2015

Organic light-emitting materials in marine macrophytes from various coastal environments were identified. Twentyeight species from the solvent fractions were examined and identified as candidates for bioorganic light-emitting materials using photoluminescence (PL) spectra and gas chromatography-mass spectrometry. We selected 16 solvent fractions from a total of 1,221 prepared from Ishige okamurae, Sargassum confusum, Grateloupia elliptica, Chondracanthus intermedius, Porphyra yezoensis, Meristotheca papulosa, Gelidium amansii, and Scytosiphon lomentaria. The maximum light-emitting PL spectra appeared at various colors, mainly between blue and green, based on chromaticity coordinates, from solvent fractions of M. papulosa, G. amansii, G. elliptica, P. yezoensis, S. lomentaria, I. okamurae, and C. intermedius. These results will contribute to the development of novel organic light-emitting materials.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.415.2-415.2
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• 2014

Cost-effective, robust devices for solid-state lighting industry that converts electricity to light revolutionize the current lighting industry. Phosphor materials used in these devices should be synthesized in a low-cost and effective method for use in WLEDs. In this presentation, the synthesis of Eu3+ ions doped BaMoO4 phosphor samples by a facile synthesis process for red component of WLEDs will be shown. The tetragonal phase of the host lattice was substantiated by the X-ray diffraction patterns. The morphological studies were carried out by using a field-emission scanning electron microscope and transmission electron microscope. These confirmed the formation of a shuttle like particles with perpendicular protrusions in the middle of the particle. The photoluminescence (PL) properties exhibited good emission with a high asymmetry ratio when excited with ultraviolet B wavelengths (~ 280-315 nm). The cathodoluminescence (CL) spectra showed similar results to the PL spectra, indicating the rich red emission. The results suggest that this phosphor is a good material as red region component in the development of tri-band UV excitation based WLEDs.

• Journal of the Mineralogical Society of Korea
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• v.22 no.2
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• pp.81-86
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• 2009

The luminescence and fluorescence were investigated by photoluminescence spectroscopy for six gemstones which exhibit color change effect. The shape of luminescence peaks appears different when observed by a photoluminescence spectroscopewith a 514 nm Ar laser source. However, it was not possible to observe the difference in the spectra between the natural and synthetic origins for the same type of gemstones. It was found that the photoluminescence spectrum was related to the crystal structure of the stones. Photoluminescence spectra using a 325 nm He-Cd source reveal that fluorescence is relatively strong for synthetic alexandrite, synthetic color change sapphire and natural alexandrite comparing to the rest of gemstones examined.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.548-553
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• 2005

Trivalent cerium$(Ce^{3+})$ activated YAG (yttrium aluminum garnet, $Y_3Al_5O_{12})$) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were $O_2/(Ar+O_2)$ gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio $O_2/(Ar+O_2)$. High quality YAG:Ce thin films could be obtained at the gas ratio of $50\%$ oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.242-243
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• 2015

Fault detection using optical emission spectra with modified K-means cluster analysis and principal component anal ysis are demonstrated for inductive coupl ed pl asma cl eaning processes. The optical emission spectra from optical emission spectroscopy (OES) are used for measurement. Furthermore, Principal component analysis and K-means cluster analysis algorithm is modified and applied to real-time detection and sensitivity enhancement for fluorocarbon cleaning processes. The proposed techniques show clear improvement of sensitivity and significant noise reduction when they are compared with single wavelength signals measured by OES. These techniques are expected to be applied to various plasma monitoring applications including fault detections as well as chamber cleaning endpoint detection.