• Journal of the Korean Ceramic Society
• /
• v.44 no.5 s.300
• /
• pp.155-159
• /
• 2007

Blue light-emitting phosphors having the excitation spectrum range of the medium-long ultraviolet ($280nm{\sim}400nm$) have been prepared by solid state reaction method. As a starting material the natural alkaline feldspar powder produced from the domestic mine field in Buyeo, Chungnam-do. The photoluminescence characteristics and crystal structures have been analyzed for the phosphor samples. The powder mixture of the natural alkaline feldspar and the rare-earth oxide was calcined at $800{\sim}1000^{\circ}C\;for\;3{\sim}4h$ in air. The calcined samples we fully ground at room temperature and then heat-treated in the mild reducing gas atmosphere of $5%H_2-95%N_2$ mixture at $1100{\sim}1150^{\circ}C\;for\;3{\sim}4h$. The natural alkaline feldspar material consists of the monoclinic orthoclase ($KAlSi_3O_8$) and the triclinic albite ($NaAlSi_3O_8$) phases. At the $0.5wt%Eu_2O_3$ addition the PL spectrum showed the maximum intensity and with further increase of $Eu_2O_3$ the PL intensity decreased. The albite phase disappeared in the $Eu_2O_3$ doped phosphors. The effect of the co-doped activator on the PL characteristics have been also discussed.

• Proceedings of the KIEE Conference
• /
• 2005.05a
• /
• pp.191-193
• /
• 2005

Flash memories are one of best media to support portable computer's storages. However, we need to improve traditional data management scheme due to the relatively slow characteristics of flash operation as compared to RAM memory. In order to achieve this goal, we devise a new scheme called Flash Two Phase Locking (F2PL) scheme for efficient data processing. F2PL improves transaction performance by allowing multi version reads and efficiently handling slow flash write/erase operation in lock management process.

• Journal of IKEEE
• /
• v.10 no.2 s.19
• /
• pp.161-167
• /
• 2006

The effect of aging on the optoelectronic properties of a single ZnO nanowire is investigated in this study. The photoluminescence (PL), photocurrent spectrum, current-voltage characteristics, and photoresponse were measured for the as-grown ZnO nanowire and for the same nanowire exposed to air for three months. For the aged nanowire, the broad PL band is weaker, the intensity of the photocurrent is strengthened, and the photoresponse is slower, compared with the as-grown nanowire. It Is suggested in this paper that the observed aging effect on the PL is due to the reduction in the number of oxygen vacancies within the nanowire and that the aging effect on the photocurrent and photoresponse originates from the formation of oxygen vacancies near the surface.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.1
• /
• pp.25-28
• /
• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.299-302
• /
• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of multicolor emission low operation voltage. In this study, several Eu complexes such as Eu(TPB)$_3$(Phen) and Eu(TPB)$_3$(Bpy) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of glass substrate/ITO/TPD/Europium-complexs/Alq$_3$/Al, where aromatic diamine(TPD) was used as an hole transporting and Alq$_3$ was used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these Europium complexes were dependent upon the ligands coordinated to Europium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• Transactions on Electrical and Electronic Materials
• /
• v.2 no.2
• /
• pp.16-20
• /
• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.2
• /
• pp.145-151
• /
• 2001

In this study, blue light emiting, soluble PPV copolymers were synthesized by Witting reaction and characterized. ITO/copolymer/Ca and ITO/copolymer/A1 structured light emitting diodes(LED) were fabricated and their I-V characteristics were examined. Copolymers showed $\pi$-$\pi$ transition in UV-Vis./NIR spectra. The PL and abosorption spectrum showed the symmetric vibration modes with mirror images which means that copolymers are highly aligned. By introducing aliphatic hydrocarbon group on polymer main chain, the solubility of copolymers was improved and no significant effects of substituent were observed. The band offset of copolymers are well suited as light emitting material for LED application than monomer or oligomer does. THe band offset of copolymers is ∼3eV in PL spectrum and the threshold voltages of ITO/copolymer/Ca and ITO/copolymer/Al structured LED 3V, 12V respectively. In the case of ITO/copolymer/Ca LED, it is believed that the amount of electrons and holes is well balanced and the recombination of opposite charges occurs easily because the work functions of Ca and Al electrodes are 2.9 and 4.3eV respectively and the difference in barrier height between polymer and electrode was small.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.202-205
• /
• 2002

The photoluminescence (PL) characteristics of the silicon-oxygen(Si-O) superlattice formed by molecular beam epitaxy (MBE) were studied. To confirm the presence of the nanocrystalline Si structure, Raman scattering measurement was performed. The blue shift was observed in the PL peak of the oxygen-annealed sample, compared to the hydrogen-annealed sample, which is due to a contribution of smaller crystallites. Our results determine the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high-speed and low-power silicon MOSFET devices in the future.

• Journal of Ceramic Processing Research
• /
• v.20 no.4
• /
• pp.431-435
• /
• 2019

The thermal annealing effects on the optical transparency and luminescent characteristics of the Eu-doped Y2O3 thin films have been investigated. The as-deposited Y2O3:Eu films exhibited an optical band gap of 5.78 eV with a transparency of 89 % at a wavelength of 550 nm. As the annealing temperature increased from 1000 to 1300 ℃, the optical band gap and transparency of the films decreased from 5.77 to 4.91 eV and from 86.8 to 64.5 % at 550 nm, respectively. The crystalline quality of the films was improved with increasing annealing temperature. The annealed Y2O3:Eu films emitted a red-color photoluminescence (PL) with the highest emission peak near 612 nm. The PL intensity was increased with increasing annealing temperature to 1200 ℃, resulting from the improvement in the crystalline quality of the films. The PL intensity was decreased with further increasing temperature above 1200 ℃ due to the formation of Y2SiO5 phase by the reaction of the film with the quartz substrate.

• Journal of Environmental Science International
• /
• v.1 no.2
• /
• pp.167-175
• /
• 1992

This study was conducted for an efficient utilization of waste fly ash obtained from the power plant. Fly ash was used for synthesizing zeolite. Na-Pl zeolite could be easily synthesized from waste fly ash and showed the potential to remove heavy metal ions. The synthetic zeolite showed good adsorption property for heavy metal much better than raw fly ash and natural zeolites. Na-Pl exhibited the high adsorption efficiency with a maximum value of 260 Pb mg/g and strong affinity for Pb2+ ion. The metal ion selectivity of Na-Pl was determined in a decreasing order : $Pb^{2+}$>$Cd^{2+}$>$Cu^{2+}$+>$Zn^{2+}$>$Fe^{3+}$