• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.9
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• pp.54-58
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• 2011

In this paper a dual-band Class-E power amplifier using Composite Right-/Left-Handed transmission lines and PIN diode is proposed. Dual-band operation is achieved by the frequency offset and nonlinear phase slope of CRLH TL for the matching network of power amplifiers. The proposed power amplifier has been realized by using in the input and the output matching network for high power added efficiency. PIN diode has been used to obtain the dual-band of power amplifier. The measured results show that output powers of 42.17 dBm and 41.43 dBm were obtained at 800 MHz and 1900 MHz, respectively. At this frequency, we have obtained the power-added efficiency(PAE) of 67.84 % and 65.31 % in two operation frequencies, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.54-62
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• 2015

This paper describes the design and fabrication of an electronically rotated Tactical Air Navigation(TACAN) antenna using parasitic elements and PIN diode switches. We used parasitic elements arranged in a circular array and PIN diode switches to electronically rotate the antenna instead of employing a mechanically rotated antenna using motor. The antenna's physical characteristics and design features to generate the cardioid pattern and nine-lobe pattern including bearing information are described and simulated. The measured result shows a very good agreement with simulation and meets the specification of MIL-STD-291C.

• ETRI Journal
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• v.28 no.1
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• pp.84-86
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• 2006

This letter presents a small-sized, high-power single-pole double-throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow-wave characteristic, the DGS is used for the quarter-wave (${\lambda}$/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt-connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt-type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1984.10a
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• pp.19-21
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• 1984

A design of digital loaded-line phase shifter circuits with PIN Diode is presented. A computer program showes that any phase difference which is satisfied with the condition of minimun VSWR can be obtained with variable stub length and spacing between stubs. A 30 phase bit is designed and measured at 3Gh. Experimental and theoretical performance are compared and found to be in good agreement.

• Journal of IKEEE
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• v.23 no.4
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• pp.1457-1460
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• 2019

In this paper, we proposed the development of a mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarm that can be location-tracked and irradiated. To measure radiation exposure dose, we use the PIN-Diode radiation measurement sensor module, a semi-conductive radiation measurement sensor that can minimize size and weight. The design for removing leakage current is carried out to enhance the characteristics of the radiation measurement sensor using PIN-Diode. The IMU sensor module is used to estimate the location of the current fireman at the same time as the accident estimate by adding together the data and the values for acceleration on the three axis. Experiments were conductied by an authorized testing agency to determine the efficiency of the proposed mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarms. The cumulative dose measurement range was measured in the range of 10 μSv to 10 mSv, the highest level in the world. The accuracy was measured from ±6.3% to ±9.0% (137 Cs) and normal operation was found at the international standard of ±15%. In addition, positional accuracy was measured within ±10%, resulting in a high level of results, demonstrating its effectiveness. Therefore, it is expected that more firemen will be able to provide with superior performance integrated radiation exposure protection fireman life-saving alarm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1003-1009
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• 2005

In this paper, small-size high-power single pole double throw(SPDT) switch with defected pound structure(DGS) is presented for wireless broadband internet application. To reduce the circuit size using slow-wave characteristic, the DGS is applied to ${\lambda}/4$ transmission line of the switch and the measured results are compared with them of conventional switch. To secure high degree of isolation, the switch with the DGS is composed of shunt-connected PIN diodes and shows insertion loss of 0.8 dB and isolation more than 50 dB at 2.3 GHz. The size of the switch is reduced about $50\%$ only with the DGS patterns while it has very similar performance to the conventional shunt-type switch.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.323-330
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• 2005

We fabricate PIN PD (Positive Intrinsic Negative Photo-Diode) for CWDM optical repeater and optical transmission system, and analyze theoretically the characteristics to verify the capability of device fabricated. Furthermore, we integrate CWDM filter into PD package to enhance the cost and the performance when compared to the conventional system, in which CWDM filter and PD package are linked by optical fusion splicing. The integrated CWDM PD is fabricated by three steps as follows: CWDM filter design, PD packaging, and product assembly and test. The results of measurement for PD fabricated reveal 0.5 dB bandwidth of 17 nm, isolation over 60 dB at transmission port and over 20 dB at reflection port. Also, the IMD3 for wireless communication is over 63 dBc, and the responsivity of PD presents over 0.9 A/W for 20 samples of the total 23 PD. The total insertion loss reduces about 0.4${\~}$0.7 dB due to the integrated assembly of CWDM and PD.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.782-787
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• 2000

The monolithic single-pole three-throw(SP3T) GaAs PIN diode switch circuit for the broadband and high power application was designed, fabricated and characterized. To improve the power handling capability, buffer layers of the diode employ both low temperature buffer and superlattice buffer. The diode show the breakdown voltage of 65V and turn-on voltage of 1.3V. The monolithic integrated switch employed microstrip lines and backside via holes for low-inductance signal grounding. The vertical epitaxial PIN structure demonstrated better microwave performance than planar type structures due to lower parasitics and higher quality intrinsic region. As the large signal characteristics of the fabricated SP3T MMIC switch, the insertion loss was measured less than 0.6dB and the isolation better than 50dB when the input power was increased from 8dBM to 32dBm at 14.5GHz.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1990.06a
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• pp.529-532
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• 1990

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.267-271
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• 2001

다이오드의 소신호 및 대신호 파라미터 추출은 DC 해석, 외부 기생 소자 추출, 마지막으로 5-파라미터에 의한 내부소자 추출로 이루어진다. DC IV-곡선과 S-파라미터의 curve-fitting으로 내부 파라미터를 구하였고 외부 기생소자는 바이어스에 따라 변하지 성질을 이용하였다. 사용된 소자는 Schottky diode는 SIEMENS사의 BAS125를, Varactor diode는 SONY사의 1t362를, PIN diode는 Hitachi사의 HVM14S를 모델로 사용하였다. 실측을 위해 사용된 소자는 각각 HP사의 HSMS-2822, SONY사의 1t362, HP사의 HSMP-3834을 이용하여 측정하였다.