• Title/Summary/Keyword: PESC

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High Efficiency Crystalline Silicon Solar Cells (고효율 단결정 실리콘 태양전지)

  • Kim, D.S.;Cho, E.C.;Cho, Y.H.;Ebong, A.U.;Min, Y.S.;Lee, S.H.
    • Solar Energy
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    • v.17 no.1
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    • pp.17-26
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    • 1997
  • Since PESC(passivated emitter solar cell) was developed in 1985, high efficiency silicon solar cell technology based on planar technology has been improved in the order of PERC, Point Contact Solar Cell, PERL. BCSC and DSBC, which do not require photolithography, are expected to replace commercial screen printed cells because of its potential for low cost and high efficiency. In this paper, history and characteristics of each type of cells are reviewed.

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Investigations of the Boron Diffusion Process for n-type Mono-Crystalline Silicon Substrates and Ni/Cu Plated Solar Cell Fabrication

  • Lee, Sunyong;Rehman, Atteq ur;Shin, Eun Gu;Lee, Soo Hong
    • Current Photovoltaic Research
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    • v.2 no.4
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    • pp.147-151
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    • 2014
  • A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

Characteristics of metal contact for silicon solar cells (실리콘 태양전지의 금속전극 특성)

  • Cho, Eun-Chel;Kim, Dong-Seop;Min, Yo-Sep;Cho, Young-Hyun;Ebong, A.U.;Lee, Soo-Hong
    • Solar Energy
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    • v.17 no.1
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    • pp.59-66
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    • 1997
  • The solar cell electrical output parameters such as the open circuit voltage($V_{oc}$) and short circuit current density($V_{sc}$) are intrinsic characteristics depending on junction depth, doping concentration, metal contacts barriers and cell structure. As a role of thumb for solar cell design, the metal contact barriers for phosphorus doped emitter should have lower work function in order to provide lower series resistance. The fabrication of PESC(passivated emitter solar cell) structure usually involves the use of titanium as a metal contact barrier. Chromium, which work function is similar to titanium but conductance is higher than titanium is being investigated as the new metal contact barrier. Although titanium has lower work function difference than chromium, the electric performances of chromium as contact barrier are higher than titanium. This better performance is attributed to the lower resistivity from chromium. This paper, therefore, compares the attributes of metal barrier contacts using titanium and chromium.

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Effects of Exogenous Insulin-like Growth Factor 2 on Neural Differentiation of Parthenogenetic Murine Embryonic Stem Cells

  • Choi, Young-Ju;Park, Sang-Kyu;Kang, Ho-In;Roh, Sang-Ho
    • Reproductive and Developmental Biology
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    • v.36 no.1
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    • pp.33-37
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    • 2012
  • Differential capacity of the parthenogenetic embryonic stem cells (PESCs) is still under controversy and the mechanisms of its neural induction are yet poorly understood. Here we demonstrated neural lineage induction of PESCs by addition of insulin-like growth factor-2 (Igf2), which is an important factor for embryo organ development and a paternally expressed imprinting gene. Murine PESCs were aggregated to embryoid bodies (EBs) by suspension culture under the leukemia inhibitory factor-free condition for 4 days. To test the effect of exogenous Igf2, 30 ng/ml of Igf2 was supplemented to EBs induction medium. Then neural induction was carried out with serum-free medium containing insulin, transferrin, selenium, and fibronectin complex (ITSFn) for 12 days. Normal murine embryonic stem cells derived from fertilized embryos (ESCs) were used as the control group. Neural potential of differentiated PESCs and ESCs were analyzed by immunofluorescent labeling and real-time PCR assay (Nestin, neural progenitor marker; Tuj1, neuronal cell marker; GFAP, glial cell marker). The differentiated cells from both ESC and PESC showed heterogeneous population of Nestin, Tuj1, and GFAP positive cells. In terms of the level of gene expression, PESC showed 4 times higher level of GFAP expression than ESCs. After exposure to Igf2, the expression level of GFAP decreased both in derivatives of PESCs and ESCs. Interestingly, the expression level of $Tuj1$ increased only in ESCs, not in PESCs. The results show that IGF2 is a positive effector for suppressing over-expressed glial differentiation during neural induction of PESCs and for promoting neuronal differentiation of ESCs, while exogenous Igf2 could not accelerate the neuronal differentiation of PESCs. Although exogenous Igf2 promotes neuronal differentiation of normal ESCs, expression of endogenous $Igf2$ may be critical for initiating neuronal differentiation of pluripotent stem cells. The findings may contribute to understanding of the relationship between imprinting mechanism and neural differentiation and its application to neural tissue repair in the future.