• Proceedings of the Korean Fiber Society Conference
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• 2001.10a
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• pp.17-20
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• 2001

Poly(3,4-ethylenedioxythiophene) (PEDOT), one of the most successful conducting polymers in the market place, has been attracting much interest because of its excellent environmental stability, high conductivity and transparency in thin, oxidized state. Since PEDOT was first synthesized in early 1990s by Jonas et al., many studies on PEDOT have been done to solve its insoluble property in any organic solvents and to extend its application fields[1]. (omitted)

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1564-1566
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• 2004

BCP의 이온화에너지 (Ionization Potential; IP)는 5.72ev와 전자친화도 (Electron Affinity; EA)는 2.85ev이며, PEDOT의 IP=5.74ev와 EA=3.3sev이고, TAZ의 IP=6.45ev와 EA=2.77ev, TPD는 IP=5.75ev와 EA=2.S8eV를 나타내었다. 그리고 BCP와 TAZ는 산화전위의 시작점과 증가곡선의 전위 변곡점과의 차이(정공층 갭)와 환원전위의 시작점과 변곡점의 차이(전자층 갭)가 서로 비슷하였으며, PEDOT과 TPD의 경우 정공층의 갭이 전자층의 갭보다 크게 나타났다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.372-372
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• 2012

We have studied a fabrication of Poly (3,4-ethylenedioxythiophene) (PEDOT) wire arrays and structures with various feature sizes from hundreds micrometers to tens nanometers. PEDOT is well-known as a conducting material, can be grown by a vapor pressure polymerization (VPP) method. The VPP technique is a bottom-up processing method that utilizes the organic arrangement of macromolecules to easily produce ordered aggregates. Also, liquid-bridge-mediated nanotransfer molding (LB-nTM), which was reported as a new direct patterning method recently, is based on the direct transfer of various materials from a mould to a substrate through a liquid bridge between them. The PEDOT nanowires grown by VPP method and transferred on a substrate to use LB-nTM method have been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Selected Area Electron Diffraction (SAED), X-Ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), and electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.69-73
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• 2018

The power law is very important in gas sensing for the determination of gas concentration. In this study, the resistance of a gas sensor based on poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate+graphene oxide composite was found to exhibit a power law dependence on hydrogen concentration at $150^{\circ}C$. Experiments were carried out in the gas concentration range of 30~180 ppm at which the sensor showed a sensitivity of 6~9% with a response and recovery time of 30s.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.654-656
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• 2008

We enhanced the conductivity of PEDOT-PSS by mixing with glycerol and fabricated the low contact resistance of source and drain[S/D] electrodes of OTFT with PEDOT-PSS by ink-jetting printing. The contact resistance was much smaller by seven times than Au with $200k{\Omega}$ at $V_G=-5V$. For the bottom contacted OTFTs, the performance was comparable to OTFTs with Au electrodes with the field effect mobility of $0.2\;cm^2/V s$.

• Journal of Information Display
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• v.12 no.4
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• pp.223-227
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• 2011

Electrophosphorescent devices with ionomer-type hole transport layers were investigated. On top of the 3,4-ethylenedioxy thiophene:poly(4-styrene sulfonate) [PEDOT:PSS] structures, fluoropolymer interfacial layers (FPIs) with different side chain lengths were introduced. Both for the PEDOT:PSS/FPI (layered) and PEDOT:PSS (mixed) structures with soluble phosphorescent emitters, the short-side-chain FPIs showed higher efficiency. The difference in the electrical properties of the two FPIs for bipolar (light-emitting) devices was not clear, but the hole-only device clearly showed the favored hole injection at the PEDOT:PSS/FPI structure with a shorter side chain, a copolymer of tetrafluoroethylene and sulfonyl fluoride vinyl ether.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.184-184
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• 2010

ITO의 전극 패턴에 따른 유기 광기전력 소자의 전기적 특성에 대해서 연구하였다. 소자의 구조는 ITO/PEDOT:PSS(90nm)/CuPc(20nm)/$C_{60}$(40nm)/LiF(0.5nm)/Al(100nm)이고, PEDOT:PSS는 스핀 코팅한 후 $120^{\circ}C$에서 20분간 건조시켰으며, 유기물은 열증착을 하여 제작하였다. ITO 전극의 패턴을 corss-bar type과 island type으로 하여 소자의 특성을 비교하였다. 광원은 500W xenon lamp를 사용하였고, optical density filter로 광원의 세기를 조절하였으며, AM 1.5G의 스펙트럼을 조사하였다. PEDOT:PSS 층을 사용함으로서 유기 광기전력 소자의 효율, 단락 전류, 그리고 개방 전압의 향상을 얻을 수 있었다. ITO 전극 패턴에 따른 광기전력 소자의 특성은 cross-bar type에 비하여 island type의 구조에서 유기 광기전력 소자의 효율이 34% 감소하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.277.1-277.1
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• 2014

전도성 고분자인 PEDOT은 좋은 광학적 특성 및 유연성, 등의 장점으로 인해 TCO 박막으로의 응용을 위한 연구가 이루어 지고 있다. 하지만, 아직 까지는 높은 수준의 전도성 향상을 기대하기는 어려운 실정이며 전도성 향상에 대한 체계적 연구가 부족한 상황이다. 이에 본 연구에서는 다양한 알코올을 이용한 Dipping treatment를 활용하여 전도성의 변화에 대한 고찰을 하였으며, 열처리 과정을 통해 전도성이 어떻게 영향을 받는지에 대하여 연구하였다. 이를 위해 박막의 두께 및 cross-section을 FE-SEM을 이용하여 측정하였고, 각 각의 박막의 비저항은 4-poin probe를 활용하여 면저항을 구한다음 두께를 곱하는 방법으로 계산하였다. 동시에 열처리 및 Dipping을 한 박막의 PEDOT의 표면을 AFM image를 통해 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.766-769
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• 2002

We have seen the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine(CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)(PEDOT:PSS) in a device structure of ITO/buffer/TPD/$Alq_3$/Al. Polymer PVK and PEDOT:PSS buffer layer was made using spin casting method and the CuPc layer was made using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature with a thickness variation of buffer layer. We have obtained an improvement of the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer are used, respectively. The enhancement of the efficiency is attributed to the improved balance of holes and elelctrons due to the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer functions as a hole-injection supporter and the PVK layer as a hole-blocking one.