• Title/Summary/Keyword: P450 2J2

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Effects of Amylase and Cellulase Supplementation in Sorghum-based Diets for Finishing Pigs

  • Park, J.S.;Kim, I.H.;Hancock, J.D.;Hines, R.H.;Cobb, C.;Cao, H.;Hong, J.W.;Kwon, O.S.
    • Asian-Australasian Journal of Animal Sciences
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    • v.16 no.1
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    • pp.70-76
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    • 2003
  • Three experiments were conducted to determine the effects of a sorghum-specific enzyme system, derived from an Aspergillus niger and Bacillus subtilis fermentation extract (carbohydrase activity of 1,650 $\alpha$-amylase units and cellulase activity of 30 fibrinolytic units/mL), on growth performance of finishing pigs. In Exp. 1,192 pigs (average initial BW of 46.1 kg) were fed sorghum-based diets without or with 360 mL of enzyme system per ton of sorghum in a 78 d growth assay. For d 0 to 39, gain/feed was improved (p<0.03) with enzyme supplementation, but ADG was not affected (p>0.15). For d 39 to 78 and overall (d 0 to 78), ADG, gain/feed, and digestibilities of DM and N were not affected (p>0.13) by enzyme supplementation. Backfat thickness, fat-free lean index, and scores for stomach keratinization and ulcers also were not affected (p>0.15) by the dietary treatments. In Exp. 2,168 pigs (average initial BW of 58.4 kg) were fed diets without or with 150, 300, or 450 mL/ton of the same enzyme system used in Exp. 1. Adding as much as 450 mL enzyme system / ton of sorghum did not affect (p>0.15) ADG or gain/feed for d 0 to 29 of the growth assay. However, during d 29 to 63, ADG increased by 11% (linear effect, p<0.02) and gain/feed increased by 10% (linear effect, p<0.06) as enzyme concentration was increased from none to 450 mL/ton of sorghum. For the overall period (d 0 to 63), ADG tended to increase (p<0.08) with enzyme supplementation, but gain/feed and digestibilities of DM and N were not affected (p>0.14). Carcass characteristics (dressing percentage, backfat thickness, and fat free lean index) also were not affected (p>0.20) by addition of the enzyme system. In Exp. 3,176 pigs (average initial BW of 46.7 kg) were fed diets without or with 450, 900, or 1,350 mL/ton of the same enzyme system used in Exp. 1 and 2 in a 71 d growth assay. Adding up to 1,350 mL/ton of enzyme had no effects (p>0.15) on ADG, gain/feed, digestibilities of DM and N, and carcass characteristics (dressing percentage, backfat thickness, and fat-free lean index). In conclusion, finishing pigs fed diets with a sorghum-specific enzyme system showed some positive trends for improved growth performance, but those effects were not large and (or) consistent.

Comparative Measurements and Characteristics of Cu Diffusion into Low-Dielectric Constant para-xylene based Plasma Polymer Thin Films

  • Kim, K.J.;Kim, K.S.;Jang, Y.C.;Lee, N.-E.;Choi, J.;Jung, D.
    • Journal of Surface Science and Engineering
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    • v.34 no.5
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    • pp.475-480
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    • 2001
  • Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

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The Enhancement of Cytochrome P-450 Mediated Aryl Hydroxylation of Bentazon in Rice Microsomes (벼에서 Bentazon 히드록시화반응에 관련된 Cytochrome P-450 활성(活性) 증진(增進)에 관한 연구(硏究))

  • Pyon, J.Y.;Balke, N.E.
    • Korean Journal of Weed Science
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    • v.17 no.1
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    • pp.59-65
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    • 1997
  • Bentazon 6-hydroxylase (B6H) and cinnamic acid 4-hydroxylase (CA4H) activities were determined in rice (Oryza sativa L.) microsomes to study methods of enhancing cytochrome P-450 mediated aryl hydroxylation of bentazon by hydoxylase inducing compounds. Pretreating rice seeds with 1,8-naphthalic anhydride at 0.5-2% and fenclorim at 5 and 10 ${\mu}M$ increased B6H and CA4H activities. Treatments of rice seedling with ethanol 2.5% enhanced B6H and CA4H activities, and with phenobarbital at 12 mM enhanced B6H activity, and CA4H activity was enhanced at 2 mM. B6H activity was synergistically enhanced by combined treatments of ethanol 2.5 or 5% and phenobarbital 8 or 12mM and also that of 1,8-naphthalic anhydride 0.5 or 1% and phenobarbital 8 or 12 mM, but CA4H activity was decreased by combined treatment. Five-day-old rice seedlings showed higher B6H and CA4H activities which decreased with seedling age.

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Study on the reaction mechanism between Sn and electroless Ni-P with varying P content (무전해 Ni-P막의 P 함량 변화에 따른 Sn과의 반응 메커니즘 연구)

  • ;;;Shih D. Y.
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.88-93
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    • 2003
  • 무전해 Ni-P와 Sn의 반응 및 Ni-P의 결정화에 대한 P 함량의 영향을 세 가지 다른 조성의 Ni-P (P 4.6, 9, 13 $wt.\%$)를 이용하여 연구하였다. $300^{\circ}C$까지 열처리한 모든 시편에서 $Ni_3Sn_4$ intermetallic compound (IMC)가 생성되었고 이들 시편을 $450^{\circ}C$까지 열처리한 경우 Sn 두께가 $0.5{\mu}m$로 작을 때 $Ni_3Sn_4$가 모두 $Ni_3Sn_2$로 변화하였다. nanocrystal인 Ni-4.6P는 Ni (111) texture를 유지하며 결정화되었고 Sn과의 반응시 형성되는 $Ni_3Sn_4$ IMC 또한 비정질인 Ni-9P, Ni-13P 경우보다 강한 (111) texture를 가짐이 확인되었다. Ni-P 막의 P 함량이 작은 경우 $Ni_3Sn_4$ IMC는 두껍고 조밀하게 형성되는 반면 P-rich layer 두께는 작아졌다.

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Fabrication and Characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS Solar Cells ($Ta_2O_5/Al/SiO_2/P-Si$ MIS형(形) 태양전지(太陽電池)의 제작(製作)과 특성(特性))

  • Noh, Kyung-Suk;Sohn, Yeon-Kyu
    • Solar Energy
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    • v.6 no.2
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    • pp.70-75
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    • 1986
  • The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

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RNA Expression of Cytochrome P450 in Mexican Women with Breast Cancer

  • Bandala, Cindy;Floriano-Sanchez, E.;Cardenas-Rodriguez, N.;Lopez-Cruz, J.;Lara-Padilla, E.
    • Asian Pacific Journal of Cancer Prevention
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    • v.13 no.6
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    • pp.2647-2653
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    • 2012
  • Involvement of cytochrome P450 genes (CYPs) in breast cancer (BCa) may differ between populations, with expression patterns affected by tumorigenesis. This may have an important role in the metabolism of anticancer drugs and in the progression of cancer. The aim of this study was to determine the mRNA expression patterns of four cytochrome P450 genes (CYP2W1, 3A5, 4F11 and 8A1) in Mexican women with breast cancer. Real-time PCR analyses were conducted on 32 sets of human breast tumors and adjacent non-tumor tissues, as well as 20 normal breast tissues. Expression levels were tested for association with clinical and pathological data of patients. We found higher gene expression of CYP2W1, CYP3A5, CYP4F11 in BCa than in adjacent tissues and only low in normal mammary glands in our Mexican population while CYP8A1 was only expressed in BCa and adjacent tissues. We found that Ki67 protein expression was associated with clinicopathological features as well as with CYP2W1, CYP4F11 and CYP8A1 but not with CYP3A5. The results indicated that breast cancer tissues may be better able to metabolize carcinogens and other xenobiotics to active species than normal or adjacent non-tumor tissues.

Characterization and crystal growth of InP by VGF method using quartz ampoule

  • Park, E.S.;C.H. Jung;J.J. Myung;J.Y. Hong;Kim, M.K.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.6
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    • pp.542-546
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    • 1999
  • InP single crystal, III-V binary compound semiconductor, was grown by VGF(vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal charged in conical quartz crucible what was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of $10^5$Torr and sealed up. Indium metal was melted at $1070^{\circ}C$ and InP composition was formed by diffusion of phosphorous sublimated at $450^{\circ}C$ into Indium melt. By cooling the InP composition melt ($2^{\circ}C$~$5^{\circ}C$/hr of cooling rate) in range of $1070^{\circ}C$~$900^{\circ}C$, InP crystal was grown. The grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties were measured by Van der Pauw method. At the cooling method. At the cooling rate of $2^{\circ}C$/hr, growth direction of ingot was [111] and the quality of ingot was better at the upper side of ingot than the lower side. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were $10^{15}$~$10^{16}/\textrm{cm}^3$ , $2\times 10^3$~$3\times 10^4{\textrm}{cm}^2$/Vsec and$2\times 10^{-1}$~$2\times 10^{-3}$/ Wcm in the range of 150K~300K, respectively.

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Crystal Growth of InP by VGF Method using Auqrtz Ampoule Characterization

  • Park, E.S.;C.H. Jung;J.J. Myung;J.Y. Hong;Kim, M.K.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.419-431
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    • 1999
  • InP, III-V binary compound semiconductor, single crystal was grown by VGF (vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal changed in conical quartz crucible hat was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of 10-5 Torr and sealed up. In metal in the quartz crucible was melted at 1070$^{\circ}C$ and phophorous sublimated at 450$^{\circ}C$, there after it was diffused in In melt and so InP composition was formed. By cooling the InP composition melt (2$^{\circ}C$∼5$^{\circ}C$/hr of cooling rate) in range of 1070$^{\circ}C$∼900$^{\circ}C$, InP crystal was grown. the grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties of them were measured by Van der Pauw method. At the cooling rate of 2$^{\circ}C$/hr, its direction was (111), quality of the ingot ws better upper side of the ingot than lower. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were 1015∼1016/㎤, 2x103∼3x104$\textrm{cm}^2$/Vsec and 2x10-1∼2x10-3Ωcm in the range of 150K∼300K, respectively.

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