• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.124-124
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• 2000

다이아몬드에 버금가는 높은 경도뿐만 아니라 높은 화학적 안정성 및 열전도성 등 우수한 물리화학적 특성을 가진 입방정 질화붕소(cubic boron nitride)는 마찰.마모, 전자, 광학 등의 여러 분야에서의 산업적 응용이 크게 기대되는 재료이다. 특히 탄화물형성원소에 대해 안정하여 철계금속의 가공을 위한 공구재료로의 응용 또한 크게 기대된다. 이 때문에 각종의 PVD, CVD 공정을 이용하여 c-BN 박막의 합성에 대한 연구가 광범위하게 진행되어 많은 성공사례들이 보고되고 있다. 그러나 c-BN 박막의 유용성에도 불구하고 아직 실제적인 응용이 이루어지지 못한 것은 c-BN 박막의 증착직후 급격한 박리현상 때문이다. 본 연구에서는 평행자기장을 부가한 ME-ARE(Magnetically Enhanced Activated Reactive Evaporation)법을 이용한 c-BN 박막의 합성에서 적용한 증착공정 인자들의 변화에 따른 박리특성 고찰과 함께 다층박막화 및 제 3원소 혼입 방법을 적용하여 박리특성 향상 정도를 조사하였다. BN 박막합성은 전자총에 의해 증발된 보론과 (질소+아르곤) 플라즈마의 활성화반응증착(Activated Reactive Evaporation)에 의해 이루어졌다. 기존의 ARE 장치와 달리 열음극(got cathode)과 양극(anode) 사이에 평행자기장을 부가하여 플라즈마의 증대시켜 반응효율을 높였다. 합성실험용 모재로는 p-type으로 도핑된 (100) Si웨이퍼를 30$\times$40mmzmrl로 절단 후, 10%로 희석된 완충불산용액에 10분간 침적하여 표면의 산화층을 제거한 후 사용하였다. 박막실험실에서의 주요공정변수는 기판바이어스 전압, discharge 전류, Ar/N2가스유량비이었다. 합성된 박막의 결정성 분석을 FTIR을 이용하였으며, BN 박막의상 및 미세구조관찰을 위해 투과전자현미경(TEM;Philips EM400T) 분석을 병행하였고, 박막의 기계적 물성 평가를 위해 미소경도를 측정하였다. 박리특성의 고찰은 대기중에서의 자발적 박리가 일어나 90%이상의 박리가 진행된 시점까지의 시간을 측정하였고, 증착직후 박막의 잔류응력 변화와 연관하여 고찰해 보았다.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.171-177
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• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• Journal of Korean Medical classics
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• v.21 no.1
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• pp.27-42
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• 2008

It is generally called that the Donhwang Manuscript[敦煌本] "Sanghallon(傷寒論)" is all the series of documents relating to the "Sanghallon(傷寒論)", included in one of the testaments, which was, in 1900, originally found in the Janggyeong hole[藏經洞], Makgo cave[莫高庸], Donhwang(敦煌), Gamsuk province[甘肅省]. The consecutive numbers of the Manuscript are S 202 and P 3287, the former is called the "Sanghallon(傷寒論)" A-Manuscript[甲本] and the latter consists of the "Sanghallon(傷寒論)" B-Manuscript[乙本] and the "Sanghallon(傷寒論)" C-Manuscript[丙本]. The Donhwang Manuscript is a type of a hurt book, but not a complete form of a book. As the research conducted, it has been proven that the Donhwang Manuscript "Sanghallon(傷寒論)" has the academic values as mentioned below. First, it is highly valuable to inter-related study and revise the "Sanghallon(傷寒論)". Second, it is one of circumstantial evidences to have various kinds of versions of the "Sanghallon(傷寒論)". Third, its findings somehow wipes out arguments concerning with identifying authors of the "Sanghallon(傷寒論) Sanghanrye(傷寒例)" and the "Sanghallon(傷寒論) Byeonmaekbeop(辦脈法)". Fourth, it has turned out that the existing "Geumgweokhamgyeong" is not a forgery, but one of imparted versions of the "Sanghallon(傷寒論)" In conclusion, it could be acknowledged that the discovery of the Donhwang Manuscript "Sanghallon(傷寒論)" enables to arrange and revise the "Sanghallon(傷寒論)", and it has provided researchers with critical evidences about ascertaining many kinds of different versions of the "Sanghallon(傷寒論)". Moreover, we can also find the great contribution of this findings which could clarify various non-proven arguments within many experts and researchers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.308-308
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• 2012

Electrodeposition of thermoelectric materials, including binary and ternary compounds, have been attracting attentions, because its many advantages including cost-effectiveness, rapid deposition rate, and ease of control their microstructure and crystallinity by adjusting electrodeposition parameters. In this work, $Bi_xTe_y$ films were potentiostatically electrodeposited using Au/Ni(80/20 nm)/Si substrate as the working electrode in solutions consisting of 10mM $TeO_2$ and 1M $HNO_3$ where $Bi(NO_3)_3$ was varied from 2.5 to 10 mM. Prior to electrodeposition potentiostatically, linear sweep voltammograms (LSV) were acquired with a standard three-electrode cell. The $Bi_xTe_y$ films deposited using the electrolyte containing low Bi ions shows p-type conductivity, which might be attributed by the large incorporation of Te phases. Near stoichiometric $Bi_2Te_3$ thin films were obtained from electrolytes containing 5mM $Bi(NO_3)_3$. This film shows the maximum Seebeck coefficient of $-100.3{\pm}12.7{\mu}V/K$. As the increase of Bi ions in electrolytes decreases the Seebeck coefficient and resistivity. The maximum power factor of $336.2{\mu}W/m{\cdot}K^2$ was obtained from the film deposited using the solution of 7.5mM $Bi(NO_3)_3$.

• Journal of Radiation Industry
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• v.10 no.1
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• pp.13-20
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• 2016

In order to identification of the possibility of manufacturing soybean paste (doenjang) with soybean mutant lines induced from gamma-ray mutagenesis, this study was performed to investigate the quality characteristics of doenjang using two soybean mutant lines, Baekwon-1 (BW-1) and Baekwon-2 (BW-2) and their original cultivar (cv. Baekwon, BW) for 8 weeks. The BW and two mutant lines (BW-1 and BW-2) were showed higher content of amino type nitrogen than control (cv. Taegwang). The pH decreased and the titratable acidity increased all the samples during aging period. The lightness, redness and yellowness of doenjang were the lowest in BW. Total free sugar content of doenjang was the highest in control (10.43%) after 4 weeks and composed mainly fructose and glucose. The order of the free amino acid content was Glutamic acid>Leucine>Lysine>Phenylalanine>Aspartic acid in control, Glutamic acid>Leucine>Arginine>Lysine>Phenylalanine in BW, Glutamic acid>Lysine>Phenylalanine>Aspartic acid>Valine in BW-1 and Glutamic acid>Arginine>Lysine>Phenylalanine>Aspartic acid in BW-2, respectively. Our results showed that it is possible to increase the quality of doenjang using soybean mutant lines in manufacturing soybean paste.

• The Journal of Advanced Prosthodontics
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• v.11 no.2
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• pp.95-104
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• 2019

PURPOSE. To evaluate the effect of surface treatments and repair materials on the shear bond strength and to measure the fracture toughness of CAD/CAM provisional restoration materials. MATERIALS AND METHODS. Four CAD/CAM (3D printing: Nextdent C&B and ZMD-1000B Temporary, CAD/CAM resin block: Yamahachi PMMA disk and Huge PMMA block) and four conventional (monometacrylate: Jet and Alike, dimetacrylate: Luxatemp and Protemp 4) materials were selected to fabricate disk-shaped specimens and divided into six groups according to surface treatment (n=10). CAD/CAM materials were repaired with Jet or Luxatemp, while conventional materials were repaired with their own materials. The shear bond strength was measured by using universal testing machine. Ten rectangular column-shaped specimens for each material were fabricated to measure the fracture toughness by single edge v notched beam technique. Statistical analysis was performed by one-way ANOVA. RESULTS. The highest shear bond strength of CAD/CAM materials was achieved by SiC paper + sandblasting. It was also accomplished when repairing 3D printing materials with Luxatemp, and repairing CAD/CAM resin blocks with Jet. Yamahachi PMMA disk showed the highest fracture toughness. Nextdent C&B showed the lowest fracture toughness value but no statistically significant difference from Alike and Luxatemp (P>.05). CONCLUSION. In order to successfully repair the CAD/CAM provisional restoration, mechanical surface treatment and appropriate repair material according to the CAD/CAM material type should be selected. The CAD/CAM provisional materials have proper mechanical properties for clinical use as compared to conventional materials.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Economic and Environmental Geology
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• v.56 no.3
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• pp.259-275
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• 2023

Pan African granitoids of Kaiama is comprised of K-feldspar rich granites, porphyritic granites, and granitic gneiss that are intruded by quartz veins and aplitic veins and dykes which trend NE-SW. In order to establish the geochemical signatures, petrogenesis, and tectonic settings of the lithological units, petrological, petrographical, and geochemical studies was carried out. Petrographic analysis reveals that the granitoids are dominantly composed of quartz, plagioclase feldspar, biotite, and k-feldspar with occasional muscovites, sericite, and opaque minerals that constitute very low proportion. Major, trace, and rare earth elements geochemical data reveal that the rocks have moderate to high silica (SiO₂=63-79.7%) and alumina (Al₂O₃=11.85-16.15) contents that correlate with the abundance of quartz, feldspars, and biotite. The rocks are calc-alkaline, peraluminous (ASI=1.0-<1.2), and S-type granitoids sourced by melting of pre-existing metasedimentary or sedimentary rocks containing Al, Na, and K oxides. They plot dominantly in the WPG and VAG fields suggesting emplacement in a post-collisional tectonic setting. On a multi-element variation diagram, the granitoids show depletion in Ba, K, P, Rb, and Ti while enrichment was observed for Th, U, Nd, Pb and Sm. Their rare-earth elements pattern is characterized by moderate fractionation ((La/Yb)_N=0.52-38.24) and pronounced negative Eu-anomaly (Eu/Eu^*=0.02-1.22) that points to the preservation of plagioclase from the source magma. Generally, the geochemical features of the granitoids show that they were derived by the partial melting of crustal rocks with some input from greywacke and pelitic materials in a typical post-collisional tectonic setting.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.