• 대한전자공학회논문지SD
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• 제47권7호
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• pp.8-16
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• 2010

본 연구에서는 산소분압조건이 radio 주파수(RF) 마그네트론 스퍼터링으로 증착된 Al이 도핑된 ZnO (AZO) 박막의 성질에 미치는 영향을 조사하였다. Hall, photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) 측정들은 0.9의 산소분압으로 증착된 AZO 박막의 경우 p형 전도도를 나타내었지만 반면에 0 - 0.6 범위의 산소분압으로 증착된 AZO 박막의 경우는 n형 전도도가 관찰 되었다는 것을 보여주고 있다. 또한 PL 및 XPS 결과는 zinc vacancies 와 oxygen interstitials등과 같은 억셉터 같은 결함들이 0.9의 산소분압으로 증착된 AZO 박막 내에서 증가해서 그 결과 p형 전도도의 AZO 박막을 형성하였다는 것을 알려주고 있다. Hall 결과는 0 - 0.6 범위의 산소분압으로 증착된 AZO 박막을 투명 박막 트랜지스터 응용에서 전극층으로 사용할 수 있음을 가리키고 있다. X-ray diffraction 해석으로부터 더 큰 산소분압으로 증착 된 AZO 박막 들이 더 큰 tensile 스트레스 뿐 만 아니라 더 작은 grain 크기를 가지면서 더 악화 된 결정질 특성을 가진다는 사실을 확인 하였는데 이는 증착 도중에 더 많은 산소원자들이 주입되는 것과 관련이 있음을 알 수 있었다. atomic force 마이크로스코프의 연구에서 산소분압을 사용하여 증착된 박막에서 더 완만한 표면 거칠기를 관찰하였는데 산소원자들의 주입이 더 큰 비저항을 초래하였다는 것을 Hall 측정으로도 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• 한국표면공학회지
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• 제44권6호
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• pp.250-254
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• 2011

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.68-69
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• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.180-181
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• 2011

기존의 GaN LED에 사용되어지고 있는 p형 GaN 반도체의 Ni/Au 투명 접촉 전극을 제조할 때 발생하는 오염과 공정을 줄이고 발광효율을 향상시킬 수 있는 투명 접촉 전극을 제작하기 위해 마그네트론 2원 동시 방전법을 사용하여 AZO-NiO 박막을 증착 하였다. Al 원자 함량에 따른 AZO-NiO 박막의 구조적, 전기적, 광학적 특성을 조사하였다.

• 한국재료학회지
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• 제20권12호
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.