• Title/Summary/Keyword: P-beam source

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Evaluation of Surface Dose for Field-in-Field (FIF) Technique in Breast Radiotherapy (유방암 방사선치료에서 Field-in-Field (FIF) 기법의 조사면 주변 선량 분석)

  • Il-Hoon, Cho;Daehong, Kim
    • Journal of the Korean Society of Radiology
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    • v.16 no.7
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    • pp.851-856
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    • 2022
  • The purpose of this study is to confirm the effect of reducing the surface dose around the radiation field in breast cancer radiotherapy using the Field-in-Field (FIF) technique. X-ray was exposed from a linear accelerator (Linac) was used for irradiation, and the surface dose was measured with a glass dosimeter. The source-to-surface distance (SSD) was 90 cm, the field size is 10 × 10 cm2, and the X-ray energy was 6 MV and 10 MV, respectively. The surface dose of the FIF was compared with the dose measured in the physical wedge (PW) and dynamic wedge (DW). Wedge angles of 15° and 30° were used in the PW and DW, respectively. Surface dose was measured at 1 cm, 3 cm, and 5 cm from the center of the field size, respectively. According to the results, FIF showed lower surface dose compared to PW and DW regardless of the energy of the X-ray beam, wedge angle, and dose measurement point. Since FIF could reduce the radiation dose in periphery of the field size in breast cancer treatment, it is expected to be able to reduce the secondary damage caused by the radiation beam as well as to obtain a uniform dose distribution on the target.

InGaZnO active layer 두께에 따른 thin-film transistor 전기적인 영향

  • U, Chang-Ho;Kim, Yeong-Lee;An, Cheol-Hyeon;Kim, Dong-Chan;Gong, Bo-Hyeon;Bae, Yeong-Suk;Seo, Dong-Gyu;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.5-5
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    • 2009
  • Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

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A study on monitoring the inner structure of dam body using high resolution seismic reflection method (고분해능 탄성파 반사법을 이용한 댐체 내부구조 모니터링 연구)

  • Kim Jungyul;Kim Hyoungsoo;Oh Seokhoon;Kim Yoosung
    • 한국지구물리탐사학회:학술대회논문집
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    • 2005.05a
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    • pp.15-20
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    • 2005
  • Defects of dam body which can be induced in seepage or leakage procedure can directly affect dam safety. Therefore, a proper inspection method should be carried out in the first place to find out their positions and sizes, After that, some reinforcement works such as grouting and the corresponding assessment could be taken in a proper way. The dam(center core type earth dam) issued in this study has been in need for intensive diagnosis and reinforcement work, because a lot of slumps similar to cracks, seepage and some boggy area have been observed on the downstream slope. High resolution seismic reflection method was performed on the crest profile twice before and after grouting work(Aug. 2001 and Nov. 2004) aimed at the dam inspection and the assessment of grouting efficiency as well. To enhance the data resolution, P-beam energy radiation technique which can reduce the surface waves and hence to reinforce the reflection events was used. Strong reflection events were recognized in the stack section before grouting work, It seems that the events would be caused by e.g. horizontal cracks with a considerable aperture, Meanwhile such strong reflection events were not observed in the section after grouting. That is, the grouting work was dear able to reinforce the defects of dam body. Hence, the section showed an well arranged picture of dam inner structure. In this sense, seismic reflection method will be a desirable technique for dam inspection and for monitoring dam inner structure as well.

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A study on Monitoring the Inner Structure of Dam Body Using High Resolution Seismic Reflection Method (고분해능 탄성파 반사법을 이용한 댐체 내부구조 모니터링 연구)

  • Kim, Jung-Yul;Kim, Hyoung-Soo;Oh, Seok-Hoon;Kim, Yoo-Sung
    • Journal of the Korean Geophysical Society
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    • v.8 no.1
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    • pp.1-6
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    • 2005
  • Defects of dam body which can be induced in seepage or leakage procedure can directly affect dam safety. Therefore, a proper inspection method should be carried out in the first place to find out their positions and sizes. After that, some reinforcement works such as grouting and the corresponding assessment could be taken in a proper way. The dam(center core type earth dam) issued in this study has been in need for intensive diagnosis and reinforcement work, because a lot of slumps similar to cracks, seepage and some boggy area have been observed on the downstream slope. High resolution seismic reflection method was performed on the crest profile twice before and after grouting work(Aug. 2001 and Nov. 2004) aimed at the dam inspection and the assessment of grouting efficiency as well. To enhance the data resolution, P-beam energy radiation technique which can reduce the surface waves and hence to reinforce the reflection events was used. Strong reflection events were recognized in the stack section before grouting work, It seems that the events would be caused by e.g. horizontal cracks with a considerable aperture. Meanwhile such strong reflection events were not observed in the section after grouting. That is, the grouting work was dear able to reinforce the defects of dam body. Hence, the section showed an well arranged picture of dam inner structure. In this sense, seismic reflection method will be a desirable technique for dam inspection and for monitoring dam inner structure as well.

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The Study of Dose Change by Field Effect on Atomic Number of Shielding Materals in 6 MeV Electron Beam (6 MeV 전자선의 차폐물질 원자번호와 조사야 크기에 따른 선량변화 연구)

  • Lee, Seung Hoon;Kwak, Keun Tak;Park, Ju Kyeong;Gim, Yang Soo;Cha, Seok Yong
    • The Journal of Korean Society for Radiation Therapy
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    • v.25 no.2
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    • pp.145-151
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    • 2013
  • Purpose: In this study, we analyzed how the dose change by field size effects on atomic number of shielding materials while using 6 MeV election beam. Materials and Methods: The parallel plate chamber is mounted in $25{\times}25cm^2$ the phantom such that the entrance window of the detector is flush with the phantom surface. phantom was covered laterally with aluminum, copper and lead which thickness have 5% of allowable transmission and then the doses were measured in field size $6{\times}6$, $10{\times}10$ and $20{\times}20cm^2$ respectively. 100 cGy was irradiated using 6 MeV electron beam and SSD (Source Surface Distance) was 100 cm with $10{\times}10cm^2$ field size. To calculate the photon flux, electron flux and Energy deposition produced after pass materals respectively, MCNPX code was used. Results: The results according to the various shielding materials which have 5% of allowable transmission are as in the following. Thickness change rate with field size of $6{\times}6cm^2$ and $20{\times}20cm^2$ that compared to the field size of $10{\times}10cm^2$ found to be +0.06% and -0.06% with aluminum, +0.13% and -0.1% with copper, -1.53% and +1.92% with lead respectively. Compare to the field size $10{\times}10cm^2$, energy deposition for $6{\times}6cm^2$ and $20{\times}20cm^2$ had -4.3% and +4.85% respectively without shielding material. With aluminum it had -0.87% and +6.93% respectively and with lead it had -4.16% and +5.57% respectively. When it comes to photon flux with $6{\times}6cm^2$ and $20{\times}20cm^2$ of field sizes the chance -8.95% and +15.92% without shielding material respectively, with aluminum the number -15.56% and +16.06% respectively and with copper the chance -12.27% and +15.53% respectively, with lead the number +12.36% and -19.81% respectively. In case of electron flux in the same condition, the number -3.92% and +4.55% respectively without shielding material respectively, with aluminum the number +0.59% and +6.87% respectively, with copper the number -1.59% and +3.86% respectively, with lead the chance -5.15% and +4.00% respectively. Conclusion: In this study, we found that the required thickness of the shielding materials got thinner with low atomic number substance as the irradiation field is increasing. On the other hand, with high atomic number substance the required thickness had increased. In addition, bremsstrahlung radiation have an influence on low atomic number materials and high atomic number materials are effected by scattered electrons.

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