• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.90.1-90.1
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• 2010

우리는 Machholz 혜성(C/2004Q2)의 가시광선 영역 스펙트럼 (황성원 외, 2009, JASS, v. 26, p. 279)과 기존의 연구 문헌에 나오는 Austin, Swift-Tuttle, Brorsen-Metcalf 및 de Vico 혜성의 가시광선 영역 고분산 분광 자료와 비교 분석해 방출선의 파장 및 그 원인이 되는 물질을 확인했다. 그 결과 Machholz 혜성의 방출선은 대부분 $C_2,\;NH_2,\;CN,\;H_2O^+$에 의한 것으로 나타났으며, 기존의 혜성 자료에서 알려지지 않은 미확인 방출선도 발견됐다. 또한, 주로 장파장 영역에서 나타나는 OH 방출선을 지구대기의 OH 방출선 자료와 비교 분석한 결과, Maccholz 혜성 고유의 OH일 가능성이 있는 방출선도 확인됐다. 본 연구에서 정리한 Machholz 혜성 및 다른 혜성들과의 비교 자료는 데이터베이스화하여 공개한다.

• Economic and Environmental Geology
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• v.42 no.5
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• pp.479-486
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• 2009

In natural environments, manganese (Mn) exists in the valence of +2, +3, and +4 and plays a pivotal role as a strong oxidant or reductant in the geochemical cycles of elements. Especially, Mn forms varying (oxyhydr)oxides. The oxidation state of structural Mn is characteristic to each oxide and is one of the most important factors controlling its geochemical behaviors such as solubility, sorption capacity, and redox potential. Therefore, it is important to elucidate processes governing Mn oxidation state in predicting the fate and transport of many redox sensitive elements in the environment. X-ray photoelectron spectroscopy (XPS) is a very useful method to determine the oxidation state of various elements in solid phases. In this study, the oxidation states of structural Mn in MnO, $Mn_2O_3$, $MnO_2$ were assessed based on the binding energy spectra of $Mn2p_{3/2}$ and Mn3s using XPS and were compared with those reported elsewhere. $Mn2p_{3/2}$ binding energies were determined as 640.9, 641.5, 641.8 eV for MnO, $Mn_2O_3$, $MnO_2$, respectively, which indicates that the binding energy increased with increasing Mn oxidation state. It was also noted that Ar etching may cause changes in electronic structure configuration on surface of the original sample.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Progress in Medical Physics
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• v.6 no.1
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• pp.49-57
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• 1995

The semiconductor detector has a high sensitive to radiation and a small volume. It has been frequently used in high energy photon and electron beamdosimetry. However, Semiconductor detector are subject to radiation damage in high energy radiation beam which reduces the sensitivity and creat a large discrepancy. In this experiments, P-type semiconductor was irradiated to 18 MeV electron beam with pre-irradiation for reducing the sensitivity for high reproducibility and investigated the dose characteristics against the dose rate variations. The sensitivity per unit dose in small dose rate showed a 35％ large different to a large dose rate with pre-irradiation dose for 0.5 KGy and 20％ for 3 KGyin this study. The silicon detector has showed a large dependency of beam direction with 13％ discrepancy and a linear sensitive as increased temperature.

• Journal of IKEEE
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• v.28 no.2
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• pp.131-135
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• 2024

In this study, the sensor such as current transformer type was developed for measuring non-contact partial discharge in power electrical facilities, and the results of the characteristic evaluation were discussed. The frequency response characteristics of the HFCT sensor were shown to be measurable from 20 [kHz] to 20 [MHz]. The average sensitivity for the positive direction was 0.308 [mV/pC], and the negative direction was 0.459 [mV/pC]. Which showed that the sensitivity for the negative direction was better than that for the positive direction. The developed HFCT sensor is possible to measure very small partial discharge pulse signals and can be measured various types of partial discharge that may occur at power electrical facilities.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.209.1-209.1
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• 2013

GaP는 가시광선 발광다이오드을 얻을 수 있는 적절한 재료중의 하나로 해당영역의 파장에 대하여 높은 양자효율을 얻을 수 있고, 깊은 준위 재결합이 없기 때문에 GaP 녹색 및 As 첨가한 GaAsP 적색 LED 에 적용할 수 있습니다. 또한, 상온에서 2.2 eV 에 해당하는 넓은 에너지 밴드갭을 가지고 있으므로, 소음이 없는 자외선 검출기에도 적합합니다. 이 물질에 대한 소자들은 기존에 GaP 기판을 사용하였습니다. 최근, GaP 와 격자상수가 비슷한 Si 기판을 활용하여 그 위에 성장하는 방법에 대한 관심이 많아졌습니다. Si는 물리적 및 화학적으로 안정하고 딱딱한 소재이며 대면적 기판을 쉽게 얻을 수 있어 전자 기기 및 대규모 집적 회로의 좋은 소재입니다. Si 와 대조적으로 GaP은 깨지기 쉬운 재료이며 GaP 기판은 Si와 같은 대면적 기판을 얻을 수 없습니다. 이러한 문제의 한 가지 해결책은 Si 기판위에 GaP 층의 성장입니다. GaP 과 Si의 조합은 현재의 광전소자 들에 더하여 더 많은 응용프로그램들을 가능하게 할 것입니다. 그러나, Si 기판위에 GaP 성장 시 삼차원적 성장 및 역위상 경계면과 같은 문제점들이 발생하므로 질이 높고 균일한 결정의 GaP 를 얻기가 어렵습니다. 따라서, Si 에 GaP 의 성장시 초기 단계를 제어하는 성장 기술이 필요합니다. 본 연구에서는, 유기금속화학증착법을 이용하여 Si 기판위에 양질의 GaP를 얻을 수 있는 최적의 성장조건을 얻고자 합니다. 실험 조건은 Si에 GaP의 에피택셜 성장의 초기 단계에 영향을 주는 V/III 비율, 성장압력, 기판방향 등을 가변하는 조건으로 진행하였습니다. V/III 비율은 100~6400, 성장 압력은 76~380 Torr로 진행하였고, Si 기판은 just(001)과 2~6도 기울어진 (001) 기판을 사용하였습니다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.1121-1124
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• 2015

In this paper, we propose and demonstrate an optimal design of wideband pulsed gamma-ray detectors. Pulsed gamma-ray detectors are designed to operate in a dose rate of $1{\times}10^6{\sim}1{\times}10^8rad(Si)/s$. The input parameter was derived based on the energy ratio of pulse gamma-ray spectrum and the time of the energy. The sensor output current was calculated based on the dose rate control circuit. Using the N-type Epi Wafer, the optimum condition detection sensor was designed based on TCAD. The simulation results show that the optimal Epi layer thickness is 45um when applied voltage 3.3V. The doping concentrations are as follows : N-type is an Arsenic as $1{\times}10^{19}/cm^3$, P-type is a Boron as $1{\times}10^{19}/cm^3$ and Epi layer is Phosphorus as $3.4{\times}10^{12}/cm^3$. Pulse gamma-ray detector diameter is the 1.3mm.

• The Korean Journal of Mycology
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• v.27 no.1 s.88
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• pp.44-53
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• 1999

This paper is the fifth contribution towards taxonomic studies on Cercospora and allied genera, and contains ten species of Korean cercosporoid fungi; viz., Cercospora adusta, C. chrysanthemi, C. ludwigiana, C. zebrina, Passalora depressa, Pseudocercospora destructiva, P. lonicericola, P. nojimai, Pseudocercosporella inconspicua, and Ramularia major. Morphological characteristics of taxonomic value are described and illustrated for these species to contribute towards a mycological monograph of Korean cercosporoid fungi.

• Korean Journal of Microbiology
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• v.20 no.4
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• pp.183-188
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• 1982

The neurotoxin of Clostridium botulinum type B was purified from a liquid culture. The purification steps consist of ammonium sulfate precipitation of whole culture, treatment of Polymin P(0.15%, v/v), gel filtration on Sephadex G-100 at pH5.6 and DEAE-Sephadex charomatography at pH8.0. The procedure recovered 17% of the toxin assayed in the starting culture. The toxin was homogeneous by sodium dodecyl sulfate(SDS)-polyacrylamide gel electrophoresis and had a molecular weight of 163, 000. Subunits of 106, 000 and 56, 000 molecular weight were found when purified toxin was treated with a disulfide-reducing agent and electro phoresed on SDS-polyacrylamide gels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1268-1272
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• 2003

In order to enhance current Injection efficiency of Y-groove inner strife(VIS) quantum wire lasers, three different current configurations, n-blocking on p-substrate(VIPS), p-n-p-n blocking on n-substrate(VI(PN)nS), p-blocking on n-substrate(VINS) have been designed and fabricated. Among them VIPS laser showed the most stable characteristics of lasing up to 5 mW/facet, a threshold current of 39.9 mA at 818 nm, and an external differential quantum efficiency of 24 %/facet. The current tuning rate was almost linear 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/$^{\circ}C$.