• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.120-124
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• 2003

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structure solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20${\mu}$m width and 3${\mu}$m thickness is electroplated on Cr (300${\AA}$) / Au (1500${\AA}$) films for the pick-up (42turn) and the excitation (24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3${\mu}$m is obtained under 2000 gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ~1,100 and coercive field of ~0.1 Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150 V/T at the excitation frequency of 2 MHz and the excitation voltage of 4.4 V$\_$p p/. The power consumption is estimated to be 50mW.

• Journal of the Korean Chemical Society
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• v.43 no.5
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• pp.540-546
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• 1999

Solution conformation of cyclo-($Gln^1-Trp^2-Phe^3-{\beta}Ala^4-Leu^5-Met^6$), new NK-2 antagonist in dimethyl sulfoxide solution, has been determined by the use of two-dimensional nuclear magnetic resonance spectroscopy combined with simulated annealing calculations. The peptide exhibited converged structures with the atomic root-mean-square difference for the backbone atoms ($N,\;C^{\alpha},\;C'$) of all residues being 0.02${\AA}$ in the 25 annealed structures. The analysis of the structures indicated that the cyclic peptide has three intramolecular hydrogen bonds between $Met^6NH$ and ${\beta}Ala^4CO$, ${\beta}Ala^4NH$ and $Met^6CO$, $Phe^3NH$ and $Met^6CO$, and contain a type-I ${\beta}$-turn with Gln and Trp and ${\gamma}$-turn with Leu. The addition of an extra methylene group to Gly, i.e. P-Ala residue, may relax some unfavorable restraints in the cyclic backbone structure, hence enabling an additional hydrogen bond, which results in stabilizing one conformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of $218nW/cm^{2}$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of 218 nW/$\textrm{cm}^2$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.248-253
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• 2014

Generally, power factor correction (PFC) techniques play an important role in the power supply technology. Many new circuit topologies and control strategies for PFC have been proposed. Among them, the brideless PFC (BPFC) reduces the number of switching devices and the losses and improves the power density as well. Moreover, by implementing the improved topology in the discontinous conduction mode (DCM) it ensures almost unity power factor in a simple and effective manner. In the DCM operation gives additional advantages such as zero-current turn-on in the power switches, zero-current turn-off in the output diode and reduces the complexity of the control circuitry. In this paper, a new control strategy for the BPFC is proposed. Also, the performance of the proposed system is demonstrated through experiments.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.230-234
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• 1996

A new trenched Hybrid Schottky INjection Field Effect Transistor (HSINFET) is proposed and verified by 2-D semiconductor device simulation. The feature of the proposed structure is that the hybrid Schottky injector is implemented at the trench sidewall and p-n junction injector at the upper sidewall and bottom of a trench. Two-dimensional simulation has been performed to compare the new HSINFET with the SINFET, conventional HSINFET and lateral insulated gate bipolar transistor(LIGBT). The numerical results shows that the current handling capability of the proposed HSINFET is significantly increased without sacrificing turn-off characteristics. The proposed HSINFET exhibits higher latch-up current density and much faster switching speed than the lateral IGBT. The forward voltage drop of the proposed HSINFET is 0.4 V lower than that of the conventional HSINFET and the turn-off time of the trenched HSINFET is much smaller than that of LIGBT.

• Honam Mathematical Journal
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• v.34 no.3
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• pp.403-408
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• 2012

In this paper, we prove that if K is a convex body in $E^n$ and $E_i$ and $E_o$ are inscribed ellipsoid and circumscribed ellipsoid of K respectively with ${\alpha}E_i=E_o$, then $\[({\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n{\geq}V(K)V({\Gamma}^{\ast}_pK){\geq}\[(\frac{1}{\alpha})^{\frac{n}{p}+1}\]^n{\omega}^2_n$. Lutwak and Zhang[6] proved that if K is a convex body, ${\omega}^2_n=V(K)V({\Gamma}_pK)$ if and only if K is an ellipsoid. Our inequality provides very elementary proof for their result and this in turn gives a lower bound of the volume product for the sets of constant width.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.454-462
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• 1998

Mechanisms and conditions for rounding of AUC particles were examined during AUC precipitation. Rounding of AUC particle was possible only by external circulation using pump, not by internal circulation using agitator. The rate of AUC rounding $(dn_p/dt)$ was proporational to operation conditions such as magma density $(M_t:g-U/{\iota}l)$, turn over ratio $(T_o)$ and impeller tip velocity of pump (U); $ dn_p/dt{\propto}M_t{\cdot}T_o{\cdot}U^2$. The validity of this relationship was qualitatively confirmed by comparing the expermental results. Two rounding mechanisms were suggested. One is crack formation mechanism and the other etch-pit formation mechanism on the surface of AUC particle. It was found that the crack formation is more dominant at the initial stage and the etch-pit formation at the final stage of the AUC precipitation.