• 한국세라믹학회지
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• 제37권7호
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.39-42
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• 1995

In this study, PLZT thin films prepared by Sol-Gel method were deposited on ITO glass by spin coating and cryatallized at 750$^{\circ}C$ for 5 min by RTA in oreder to investigate their electrical and optical properties. Although thin film experieneced narrowing their hysteresis loops with increasing La content, E$\sub$c/ and P.sub r/ were higher for thin film than for bulk materials. $\varepsilon$$\sub$r/ and optical transmittance increased with increasing La content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.368-369
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• 2006

Ferroelectric thin films have attracted much attention for applications in nonvolatile ferroelectric random access memories(NVFeRAM) from the view points of high speed operation, low power consumption, and large scale Integration[1,2]. Among the FRAM, BLT is of particular interest. as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). BLT capacitors were practicable by a damascene process using CMP. The P-E hysteresis were measured under an applied bias of ${\pm}5V$ by using an RT66A measurement system. The electric properties such as I-V were determined by using HP4155A analysers.

• 한국세라믹학회지
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• 제24권6호
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• pp.527-536
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• 1987

PLZT ceramics of composition La/Zr/Ti=X/65/35(X=5-10 at.%) were fabricated by two state sintering technique.Transparent PLZT ceramics were obtained in the composition above 8 at. % La. Variations of electrooptic properties in the compositions between 8 at. % and 9 at. % La were able to be expected from the significant differences of P-E hysteresis curve and the changes of dielectric phase transition. The range of birefringence of 8/65/35 specimen was 4.08${\times}$10-3. Domain switching of 9/65/35 specimen was agreed with the applied electric pulse because input pulse signal corresponds to optical pulse response.

• Journal of Magnetics
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• 제20권3호
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• pp.221-228
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• 2015

Colloidal particles consisted of individual nanosized magnetite grains on the surface of the silica cores were obtained by two-stage sol-gel technique. Size distribution and microstructure of the particles were analyzed using atomic force microscopy, X-ray diffraction and Nitrogen thermal desorption. Magnetic properties of the particles were studied by the method of the longitudinal nonlinear response. It has been shown that nanoparticles of magnetite have a size corresponding to a superparamagnetic state but exhibit hysteresis properties. The phenomenon was explained using the magnetostatic interaction model based on the hypothesis of iron oxide particles cluster aggregation on the silica surface.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.6-9
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• 2005

Aging characteristics of 0.2PMN-0.8PZT multilayer ceramic actuators (MCA) has been investigated by applying both triangular wave function for unpoled and unipolar wave for poling. P-E hysteresis loops of the MCA had been distorted after about 90 million cycles running in triangular wave function. Effective electromechanical coupling coefficient was calculated in resonant and anti resonant frequencies. And pseudo-piezoelectric constant $d_{33}$ was also estimated from the strain versus electric field characteristics. The crack growth of MCA was clearly observed along to the boundary between electrode and inactive area. That results were thought due to the internal tensile stress came from both actuation of $d_{33}$ mode and motion of Poisson ratio.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.118-121
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• 1999

PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1424-1426
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• 2003

PMN-PZT 적충형 세라믹 액츄에이터 소자를 제작한후 그 열화 특성을 조사하였다. 액츄에이터는 tape casting 방법으로 green sheet를 제작한후, screen printing방법을 이용하여 전극형상을 만들고, lamination과 cutting공정을 통하여 소자를 제작하였다. 작된 소자의 구조적인 특성을 분석하기 위하여 X-ray diffractometer를 사용하였으며, Doppler effect를 사용하는 laser vibrometer를 이용하여 전압에 따른 변위량을 측정하였다. 제작된 소자의 열화 특성을 알아보기 위하여 60 Hz의 triangular 교류 파형을 적충형 세라믹 액츄에이터에 인가하여 열화전과 후의 P-E hysteresis loop의 변화를 살펴보았으며, unipolar AC 전압을 지속적으로 인가하여 소자를 depling 시킴으로써 열화현상을 관찰하였다. 파단면에 대한 SEM 분석을 통하여 소자의 파괴 메카니즘을 알아 보도록 하였다. 이로부터 전기적, 기계적 열화가 소자의 동작에 미치는 영향에 대해서 알아 보았다.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.202-209
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• 2005

Phase evolution, microstructure and the electrical properties such as $k_p$ and $Q_m$ of $Pb(Mg_{1/3}Nb_{2/3})O_3[PMN]-Pb(Mn_{1/3}Nb_{2/3})O3[PM'N]-PbZrO_3[PZ]-PbTiO_3[PT]$ quaternary system were investigated within the compositional ranges $0{\leq}y{\leq}0.125$, y+z=0.125, and $0.39{\leq}x{\leq}0.54$ of the formula $Pb_{0.97}Sr_{0.03}[Mg_{1/3}Nb_{2/3})_y\;(Mn_{1/3}Nb_{2/3})_z\;(Zr_{x}Ti_{1-x})_{1-(y+z)}]O_3$. In the case of increasing Mn/(Mg+Mn) ratio for a fixed Zr/Ti ratio of 47.5/52.5, phase relation remained unchanged but the grain size drastically decreased, and the electrical properties changed as following: both $k_P$ and $Q_m$ reached the peak values at $Mn/(Mg+Mn)\cong0.3l7$ and gradually decreased; $\varepsilon33^T$ showed a monotonic decrease; P-E hysteresis loop gradually changed to asymmetrical one, and $E_i$ increased in correspondence. With increasing Zr/Ti ratio for a fixed Mn/(Mg+Mn) ratio of 0.317, on the contrary, the cell parameter $(\alpha^2c)^{1/3}$ gradually increased, and tetragonal-rhombohedral morphotropic phase boundary appeared in the range of $51/49{\leq}Zr/Ti{\leq}54/46$. the meantime, the grain size substantially increased, and the electrical properties changed as following: $k_P$ and $\varepsilon33^T$ reached peak values at Zr/Ti=51/49 and 48/52, respectively, and then gradually decreased; change of $Q_m$ was adverse to $k_P$; both $E_C\;and\;E_i$ considerably decreased while $P_S$ moderately increased. For the system 0.125(PMN+PM'N)-0.875PZT studied, the composition Mn/(Mg+Mn)=0.3l7 and Zr/Ti=51/49 revealed some promising electrical properties for piezoelectric transformer application such as $k_P=0.58,\;Q_m\cong1000$, and $\varepsilon^T_{33}=970$, as well as dense and fine-grained microstructure.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.106-110
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• 1998

The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.