• 공업화학
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• 제25권4호
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• pp.386-391
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• 2014

본 연구에서는 상압 저온 코로나 방전 플라즈마를 화산암재(스코리아) 분말의 살균에 적용하였다. 스코리아 분말에 Escherichia coli (E. coli) 배양액을 살포하여 균일하게 혼합한 후, 코로나 방전 플라즈마 특성 인자인 방전전력, 방전시간, 주입기체, 전극간격 등의 조건을 변화시키며 E. coli 살균효율을 조사하였다. 실험 결과 상압 저온 코로나 방전 플라즈마는 분말상의 스코리아 살균에 아주 효과적인 것으로 나타났으며, 방전전력 15 W에서 5 min 동안 살균한 결과 E. coli가 99.9% 이상 사멸하였다. 방전전력, 방전시간, 인가전압이 증가할수록 사멸율이 향상되었다. 반응기에 주입되는 기체의 종류에 따른 살균력 실험 결과, 산소 > 모사공기(산소 20%) > 질소 순으로 나타났다. 코로나 방전 플라즈마에 의한 E. coli 살균은 자외선과 활성산화종(산소라디칼, OH라디칼, 오존 등)에 의한 세포막 침식 및 에칭, 그리고 플라즈마 방전 스트리머에 의한 대장균 세포막 파괴로 설명할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 공업화학
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• 제30권2호
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• pp.160-166
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• 2019

본 연구에서는 새집증후군 유발 가스인 초산 가스에 대한 활성탄소섬유의 흡착 성능을 향상시키기 위하여, 산소플라즈마 처리를 통해 활성탄소섬유에 산소작용기를 도입하였다. 산소플라즈마 처리 시 주입되는 산소 가스의 유량이 증가할수록 산소플라즈마 활성종이 더 많이 생성되었다. 이로 인해 물리적 및 화학적인 식각이 더 많이 발생하여 활성탄소섬유의 비표면적이 감소하였다. 특히, 60 sccm의 산소 가스 유량이 주입된 시료(A-O60)의 비표면적의 경우 미처리 시료와 비교하여 약 6.95% 감소된 $1.198m^2/g$까지 감소하였다. 반면, 산소플라즈마 처리 시 주입되는 산소 가스의 유량이 증가할수록 활성탄소섬유 표면에 도입되는 산소 함량이 증가하였으며, 최대 35.87%까지 도입되었음을 확인하였다. 또한, 산소플라즈마 처리된 활성탄소섬유의 초산 가스 흡착 성능은 미처리 활성탄소섬유 대비 최대 43% 향상되었다. 이것은 산소플라즈마 처리에 의해 도입되는 O=C-O와 같은 산소작용기와 초산 분자 사이의 쌍극자 모멘트에 의한 수소결합 형성에 기인한다.

• 한국염색가공학회지
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• 제27권1호
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• pp.18-26
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• 2015

para-aramid fibers were treated by atmosphere air plasma to improve the interfacial adhesion. The wettability of plasma-treated aramid fiber was observed by means of dynamic contact angle surface free energy measurement. Surface roughness were investigated with the help of scanning electron microscopy and atomic force microscopy. The tensile test of aramid fiber roving was carried out to determine the effect of plasma surface treatments on the mechanical properties of the fibers. A pull-out force test was carried out to observe the interfacial adhesion effect with matrix material. It was found that surface modification and a chemical component ratio of the aramid fibers improved wettability and adhesion characterization. After oxygen plasma, it was indicated that modified the surface roughness of aramid fiber increased mechanical interlocking between the fiber surface and vinylester resin. Consequently the oxygen plasma treatment is able to improve fiber-matrix adhesion through excited functional group and etching effect on fiber surface.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• 한국진공학회지
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• 제8권4B호
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• Progress in Superconductivity
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• 제3권1호
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• pp.49-55
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• 2001

Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1727-1732
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• 2008

We present a facile, yet versatile carbon nanofabrication method using electron beam lithography and resist pyrolysis. Various resist nanopatterns were fabricated using a negative electron beam resist, SAL-601, and were then subjected to heat treatment in an inert atmosphere to obtain carbon nanopatterns. Suspended carbon nanostructures were fabricated by wet-etching of an underlying sacrificial oxide layer. Free-standing carbon nanostructures, which contain 122 nm-wide, 15 nm-thick, and 2 ${\mu}m$-long nanobridges, were fabricated by resist pyrolysis and nanomachining processes. Electron beam exposure dose effects on resist thickness and pattern widening were studied. The thickness of the carbon nanostructures was thinned down by etching with oxygen plasma. An electrical biosensor utilizing carbon nanostructures as a conducting channel was studied. Conductance modulations of the carbon device due to streptavidin-biotin binding and pH variations were observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI film was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was 8300$\AA$/min and vertical profile was approximately acquired 90$^{\circ}$ at CF$_4$/(CF$_4$+O$_2$) of 0.2. The selectivies of polyimide to PR and SiO$_2$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of 07CF4 were investigated by optical emission spectrometer (OES).