• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.312-317
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• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• Solar Energy
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• v.11 no.2
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• pp.70-76
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• 1991

Electrochemical reaction utilizing the semiconducting photoanodes can be applied to the photoelectrolysis of water to produce hydrogen. In this preliminary experiment, $TiO_2$ photoanodes were prepared by sintering anatase-$TiO_2$ powder at $1,250^{\circ}C$ and thermal oxidizing titanium plate at $850^{\circ}C$ in air and oxygen, respectively. Their surface structures were observed by XRD and optical microscope. I-E characteristics of thermally oxidized $TiO_2$ photoanode were also investigated under illuminated and dark conditions using 1 N and 0.1 N NaOH electrolyte solutions.

• Environmental Engineering Research
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• v.11 no.6
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• pp.311-317
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• 2006

Feasibility of destroying synthetic and actual leachate containing humic acids and ammonia compounds by supercritical water oxidation (SCWO) was evaluated. In this study, destruction efficiencies of humic acids and ammonia respectively were investigated at various reaction temperatures and residence times under pressure a supercritical pressure (280 atm). To lower reaction temperature, chemical oxidants were used. The experiment was carried out in a cylindrical batch reactor made of Hastelloy C-276 that can withstand high temperature and pressure. Concentrations of humic acids and ammonia were measured using a $COD_{Cr}$ method and an ammonia selective electrode, respectively. The optimal destructive condition of humic acids in the presence of stoichiometric oxygen(air) was 3 min at $380^{\circ}C$, but the temperature could be lowered to subcritical region ($360^{\circ}C$) along with $H_2O_2$ as an oxidant. For ammonia, the optimal destructive condition with air was 5 min at $660^{\circ}C$, but it was possible to operate the process for 3 minutes at $550^{\circ}C$ or 2 min at $600^{\circ}C$ along with $H_2O_2$ as an oxidant. At 2 min and $550^{\circ}C$ along with $H_2O_2$ as an oxidant, humic and ammonia compounds in the actual leachate were easily destructed and the effluent quality met the Korea Standard Leachate Quality.

• Journal of Electrochemical Science and Technology
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• v.2 no.1
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• pp.45-50
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• 2011

A series of expanded graphites is prepared from graphite oxide by changing the heat-treatment temperature, and their lithiation/de-lithiation mechanism and rate performance are examined. A featureless sloping profile is observed in their charge-discharge voltage and dilatometry profiles, which is contrasted by the stepwise plateau-like profiles observed with the pristine graphite. With an increase in the heat-treatment temperature from $250^{\circ}C$ to $850^{\circ}C$, the interlayer distance becomes smaller whereas the electric conductivity becomes larger, both of which are resulted from a removal of foreign atoms (mainly oxygen) from the interlayer gaps. The expanded graphite that is prepared by a heat-treatment at $450^{\circ}C$ delivers the best rate performance, which seems to be a trade-off between the $Li^+$ ion diffusivity that is affected by the interlayer distance and electrical conductivity.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.5
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• pp.160-168
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• 2010

This paper tried to find out NO generation and removal mechanisms in the space of the atmospheric pulsed barrier discharge using laser induced fluorescence method, which is a very effective approach to the measurement of spatio-temporal density of specific molecules. The propagation velocity of the primary streamer reaches about $2.7{\times}10^6$[m/s] and the secondary streamer is produced in the vicinity of positive electrode after the primary streamer finished. In this work, pulse Nd:Yag and Dye lasers are used for generating the specific wavelength of 226[nm], which is possible to excite NO molecules into $A^2{\Sigma}^+{\rightarrow}X^2{\prod}$(0,0) and fluorescence signals as the transition of $A^2{\Sigma}^+{\leftarrow}X^2$(0,2) is measured. For the effective removal of NO molecules in the plasma discharge process, the lower oxygen contents are needed and the influence of secondary streamer for the reduction mechanism of NO molecules is important

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.291-295
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• 1999

$NiFe/Co/Al_2O_3/Co/IrMn$ tunneling junctions were grown on (100)Si wafer and their spin-valve tunneling magnetoresistance (TMR) was studied. The tunneling junctions were grown by using a 5-gun RF/DC magnetron sputter. $Al_2O_3$ barrier layer was formed by exposing Al layer to oxygen atmosphere at 6$0^{\circ}C$ for 72 hours. Strong exchange coupling interaction is observed between the ferromagnetic Co and the antiferromagnetic IrMn of Co/IrMn bilayer when IrMn is 100$\AA$ thick. $NiFe(183\;{\AA})/Co(17\;{\AA})/Al_2O_3(16\;{\AA})/Co(100\;{\AA})/IrMn(100\;{\AA})$ tunneling junction shows best TMR ratio of about 10% in the applied magnetic field range of $\pm$20 Oe. The TMR ratio is improved about 23% and electrical resistance is decreased about 34% when annealed at 200 $^{\circ}C$ for 1 hour in magnetic field of 330 Oe, parallel to the bottom electrode. With increasing the active area of junction the TMR ratio increases while electrical resistance decreases.

• Journal of the Korean Chemical Society
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• v.37 no.7
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• pp.642-647
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• 1993

Monolayers of pure surfactant squaraine, DSSQ(4-distearyl amino phenyl-4'-dimethylaminophenylsquaraine), were deposited on $SnO_2 $ electrodes by the Langmuir-Blodgett film technique. The DSSQ film exhibits ${\lambda}_{max}$ at ∼530 nm. The absorption is significantly red-shifted from the solution of DSSQ (633 nm in chloroform), suggesting that the squaraine chromophores form aggregates in the LB film. The photogeneration of the squaraine aggregates is studied by measuring the photocurrents in photoelectrochemical cells consisting of the squaraine of the aggregates is found to parallel its absorption spectrum and quantum efficiency as high as 0.3% has been observed. While the photocurrent was attenuated exponentially when stearic acid layers (up to 8 layers) are inserted between the squaraine layer and the electrode, it is nearly extinguished when the squaraine layer is over-coated with 2 layers of stearic acid. A model for the observation is proposed and the roles of the electrolytes and oxygen on the photogeneration process will be discussed.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.1
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• pp.61-69
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• 2013

Polymer exchange membrane (PEM) fuel cells have multifunctional properties, and bipolar plates are one of the key components in these fuel cells. Generally, a bipolar plate has a gas flow path for hydrogen and oxygen liberated at the anode and cathode, respectively. In this study, the influence of iodine applied to a bipolar plate was investigated. Accordingly, we compared bipolar plates with and without iodine coating, and the performances of these plates were evaluated under operating conditions of $75^{\circ}C$ and 100% relative humidity. The membrane and platinum-carbon layer were affected by the iodine-coated bipolar plate. Bipolar plates coated with iodine and a membrane-electrode assembly (MEA) were investigated by electron probe microanalyzer (EPMA) and energy-dispersive x-ray spectroscopy (EDS) analysis. Polarization curves showed that the performance of a coated bipolar plate is approximately 19% higher than that of a plate without coating. Moreover, electrochemical impedance spectroscopy (EIS) analysis revealed that charge transfer resistance and membrane resistance decreased with the influence of the iodine charge transfer complex for fuel cells on the performance.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.296-296
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• 2007

Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.