• Title/Summary/Keyword: Oxygen electrode

검색결과 583건 처리시간 0.028초

RF-MSP에 의한 LiCoO$_2$박막전극의 형성에 관한 연구 (The Study of formation of LiCoO$_2$thin film electrode by RF-MSP)

  • 김상필;이우근;김익수;하홍주;박정후;조정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.167-170
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    • 1995
  • LiCoO$_2$is a electrode material of Li ion Cell which is expected as the cell with a very high electric charge density. The recent study is mainly to focused on a high power secondary cell. If very thin Li ion Cell can be made in the scale of IC substrate it can be a electric souse in IC chip , micro machine or very thin electrical display etc. LiCoO$_2$thin film can be made by CVD, Laser ablation, E-Beam, ton Beam process, sputtering etc. But to make the material with a high quality for a cell is difficult as the electrode in cell have the fitable ratio in components and a lattice structure of bulk etc. In this study, LiCoO$_2$is made by R.F magnetron sputtering with the variance of substrate temperature and oxygen partial pressure etc. In the substrate temperature of 600$^{\circ}C$ and the oxygen rate of 10%, we can acquire the good thin film LiCoO$_2$compared wish a bulk material.

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Printing Technologies for the Gate and Source/Drain Electrodes of OTFTs

  • Lee, Myung-Won;Lee, Mi-Young;Song, Chung-Kun
    • Journal of Information Display
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    • 제10권3호
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    • pp.131-136
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    • 2009
  • This is a report on the fabrication of a flexible OTFT backplane for electrophoretic display (EPD) using a printing technology. A practical printing technology for a polycarbonate substrate was developed by combining the conventional screen and inkjet printing technologies with the wet etching and oxygen plasma processes. For the gate electrode, the screen printing technology with Ag ink was developed to define the minimum line width of ${\sim}5{\mu}m$ and the thickness of ${\sim}70nm$ with the resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, which are suitable for displays with SVGA resolution. For the source and drain (S/D) electrodes, PEDOT:PSS, whose conductivity was drastically enhanced to 450 S/cm by adding 10 wt% glycerol, was adopted. In addition, the modified PEDOT:PSS could be neatly confined in the specific S/D electrode area that had been pretreated with oxygen. The OTFTs that made use of the developed printing technology produced a mobility of ${\sim}0.13cm^2/Vs.ec$ and an on/off current ratio of ${\sim}10^6$, which are comparable to those using thermally evaporated Au for the S/D electrode.

포도당 센서의 제작을 위한 고정화 방법의 전기화학적 결정 (Electrochemical Determination of Immobilization Technique for Glucose Sensor Fabrication)

  • 정태훈;홍석인;노봉수;정용섭;윤정원;김태진
    • KSBB Journal
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    • 제13권1호
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    • pp.52-57
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    • 1998
  • The present work proposes a simple electrochemical method applicable to any immobilization processes of oxidase using a Clark type oxygen electrode as a base transducer. The present work suggests an optimal immobilization technique among three different methods of glucose oxidase(GOD) onto one side of $37[\mu}$mthick blend membranes, composed o 80% of cellulose triacetate and 20% of polycaprolactone, on the basis of the maximum Michaelis-Menten parameter(Vm) determined by either steady state or transient analyses. The electrode system was made of disk type gold cathode(4mm diameter) and Ag/AgCl anode. One side of the blend membrane was in contact with the cathode surface while the other side was immobilized with GOD either in covalent-bond or cross-linked forms, the latter being covered by $25{\mu}$m thick dialysis membrane of cellulose acetate. The resultant current density was on-line monitored by a potentiostat while glucose level was varied from 1 to 20 mM. The present study shows that direct cross-linking of GOD with glutaraldehyde was mostly preferred for fabrication of glucose sensor, on the basis of resultant kinetic parameters from either steady state or transient analyses.

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$Sr_{0.8}Bi_{2.4}Ta_2O_9/Pt/Si$ 구조의 수소열처리에 의한 강유전특성 열화에 미치는 W-N/Pt 전극효과 (Effects of W-N/Pt Bottom Electrode on the Ferroelectric Degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9/Pt/Si$ Structure due to the Hydrogen Annealing)

  • 이창우
    • 마이크로전자및패키징학회지
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    • 제11권4호
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    • pp.87-91
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    • 2004
  • [ $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ ] 구조에서 $350^{\circ}C$ 온도로 수소열처리에 의한 강유전특성 열화를 방지하기 위한 W-N/Pt 하부전극의 효과를 살펴보았다. 그 결과 Pt와 SBT 박막사이에 증착된 W-N박막에 의해 수소의 확산을 차단할 수 있었다. Pt 표면에서 수소원자가 화학적인 흡착이 일어나지 않음으로써 흡착된 수소가 SBT 박막내의 산소와 결합하게 됨으로써 oxygen deficiency가 발생하는 것을 막을 수 있었다. W-N 박막이 양호한 확산방지막으로 작용하여 강유전특성의 열화현상을 방지 할 수 있었다.

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Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices

  • Lee, Do Yeon;Baek, Soo Jung;Ryu, Sung Yeon;Choi, Byung Joon
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제16권1호
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    • pp.1-6
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    • 2016
  • Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT

  • Kwon, Sung-Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제7권5호
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    • pp.267-270
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    • 2006
  • The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

물-수증기 계면을 통한 전기방전에 의한 수소 제조 (Hydrogen Generation by Electrical Discharge across Water-Vapor Interface)

  • 강구진;이수창;최용만;이웅무
    • 한국수소및신에너지학회논문집
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    • 제8권4호
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    • pp.155-160
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    • 1997
  • Generation of hydrogen and oxygen gas from water is mostly accomplished by electrolysis. In this report, a scheme is presented regarding the gas generation based on plasmolysis. Unlike electrolysis water dissociation by electrical discharge (plasmolysis) requires a high voltage to cause either electron emission or electron capture, and subsequent ionization of involved molecular species. When electrical discharge is initiated between electrodes separated by water-vapor interface, a very large electric field(~100kV/cm) is developed at the tip of the electrode placed in the vapor phase. It is found that the efficiency of plasmolysis depends on the polarity of the electrode placed in the vapor phase. Also presented is the scheme of hydrogen and oxygen generation by such electrical discharge.

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주게원자로 산소와 질소를 포함하는 거대고리 리간드로 변성된 탄소반죽전극에 의한 Ag(I) 이온의 전압-전류법적 정량 (Voltammetric Determination of Ag(I) ion with Carbon Paste Electrode Modified with Macrocyclic Ligand Containing Oxygen and Nitrogen as Ligating Atoms)

  • 이인종
    • 분석과학
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    • 제15권1호
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    • pp.91-95
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    • 2002
  • Carbon paste electrodes, modified with 5,6,14,15-dibenzo-1,4-dioxa-8,12-diazacyclopentadeca-5,14-diene containing different ligating atoms of oxygen and nitrogen, have been employed for the voltammetric determination of Ag(I) ion from aqueous solution. The voltammetric response was characterized with respect to paste composition, preconcentration method, kind of anion, variation of pH, Ag(I) ion concentration, and possible interferences. Linear calibration curves were obtained for Ag(I) ion concentration ranging from $3.0{\times}10^{-6}M$ to $8.0{\times}10^{-5}M$, and detection limit was $8.5{\times}10^{-7}M$.

Impact of Current Density, Operating Time and pH of Textile Wastewater Treatment by Electrocoagulation Process

  • Hossain, Md. Milon;Mahmud, Md. Iqbal;Parvez, Md. Shohan;Cho, Haeng Muk
    • Environmental Engineering Research
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    • 제18권3호
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    • pp.157-161
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    • 2013
  • Treatment of textile wastewater by the electrocoagulation (EC) process is being investigated by this experimental study. The objective of this experiment is to observe the efficiency of the EC process in removing chemical oxygen demand (COD) and turbidity. In this experiment an iron electrode is used in the EC process, and different working parameters such as pH, current density and operating time were studied in an attempt to achieve a higher removal capacity. The results show that the maximum COD removal occurred at neutral pH at operating time 30 min. COD and turbidity removal reaches at maximum, with optimum consumption of electrodes, between current density 85-95 $A/m^2$, and only trace amounts of metals were determined in the EC treated effluent.

Fabrication and characteristics of ITO thin films on CR39 substrate for transparent OTFT

  • Kwon, Sung-Yeol
    • 센서학회지
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    • 제16권3호
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    • pp.229-233
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    • 2007
  • The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.