• Asian-Australasian Journal of Animal Sciences
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• 제29권2호
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• pp.288-298
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• 2016

Resveratrol acts as a free radical scavenger and a potent antioxidant in the inhibition of numerous reactive oxygen species (ROS). The function of resveratrol and resveratrol-loaded nanoparticles in protecting human lung cancer cells (A549) against hydrogen peroxide was investigated in this study. The 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulphonic acid (ABTS) assay was performed to evaluate the antioxidant properties. Resveratrol had substantially high antioxidant capacity (trolox equivalent antioxidant capacity value) compared to trolox and vitamin E since the concentration of resveratrol was more than $50{\mu}M$. Nanoparticles prepared from ${\beta}$-lactoglobulin (${\beta}$-lg) were successfully developed. The ${\beta}$-lg nanoparticle showed 60 to 146 nm diameter in size with negatively charged surface. Non-cytotoxicity was observed in Caco-2 cells treated with ${\beta}$-lg nanoparticles. Fluorescein isothiocynate-conjugated ${\beta}$-lg nanoparticles were identified into the cell membrane of Caco-2 cells, indicating that nanoparticles can be used as a delivery system. Hydrogen peroxide caused accumulation of ROS in a dose- and time-dependent manner. Resveratrol-loaded nanoparticles restored $H_2O_2$-induced ROS levels by induction of cellular uptake of resveratrol in A549 cells. Furthermore, resveratrol activated nuclear factor erythroid 2-related factor 2-Kelch ECH associating protein 1 (Nrf2-Keap1) signaling in A549 cells, thereby accumulation of Nrf2 abundance, as demonstrated by western blotting approach. Overall, these results may have implications for improvement of oxidative stress in treatment with nanoparticles as a biodegradable and non-toxic delivery carrier of bioactive compounds.

• 대한환경공학회지
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• 제22권3호
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• pp.511-521
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• 2000

디젤자동차와 같이 희박연소 상태에서 많이 배출되는 질소산화물을 선택적 촉매환원(SCR)으로 제거하기 위하여 제올라이트와 금속산화물을 조합한 촉매를 석영 반응로에서 설험하였다. 환원제는 자동차 배출가스에 포함되어 있어 실용 가능성이 크다고 판단되는 탄화수소 중 안전성 및 환원효율이 좋은 올레핀계 탄화수소인 프로필렌을 사용하였다. 본 연구에서는 제올라이트 및 금속산화물계의 단일촉매 상태에서의 NOx 전환율을 파악하고, 저옹 및 고온에서 활성이 다른 촉매를 기계적으로 조합하여 NOx 전환 활성 온도창(Temperature Window)을 확대하고 내구성이 좋은 촉매를 찾고자 하였다 0.55wt%Pt-$TiO_2$/5wt%Cu-ZSM-5 촉매와 0.28wt%Pt-$TiO_2$/$Al_2O_3$ 촉매 및 1.1 wt%Pt-$TiO_2$/$Mn_2O_3$ 촉매 모두 $400^{\circ}C$를 변곡점으로 저온과 고온에서 NOx 제거활성이 있었는데, 저온에서 활성이 가장 큰 것은 0.28wt%Pt-$TiO_2$/$Al_2O_3$ 촉매이었고, 고온에서는 1.1wt%Pt-$TiO_2$/$Mn_2O_3$(21) 촉매가 제일 높은 활성을 보였다. 그러나 수분 및 아황산가스 공존시와 열적 내구성 면에서는 0.55wt%Pt-$TiO_2$/5wt% Cu-ZSM-5 촉매가 가장 우수하게 나타났다.

• 대한전자공학회논문지SD
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• 제45권7호
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• pp.32-36
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• 2008

본 연구에서는 펄스 레이저 법으로 200 mTorr 의 산소 분압에서 기판 온도를 $200^{\circ}C$ 에서 $600^{\circ}C$ 까지 변화시켜 가며, quartz 기판 위에 $In_2O_3-ZnO$ 박막을 제작하여 광학적 및 전기적 특성을 조사하였다. XRD 측정을 통해 $In_2O_3-ZnO$ 박막이 다결정 상태인 것을 알 수 있었으며, 기판 온도가 $500^{\circ}C$로 증가함에 따라 $35.5^{\circ}$ 부근의 $In_2O_3$ (400) 피크는 감소한 반면 $30.6^{\circ}$ 부근의 $In_2O_3$ (222) 피크는 증가했다. 박막의 표면을 AFM 으로 조사한 결과, round type 의 결정립들이 관찰되었으며 표면 거칠기 값은 $500^{\circ}C$에서 제작한 박막에서 가장 낮은 값 (6.15 nm) 을 나타내었다. 모든 $In_2O_3-ZnO$ 박막이 가시광 영역에서 평균 82% 이상의 투과율을 보였다. 또, $500^{\circ}C$에서 제작한 $In_2O_3-ZnO$ 박막에서 가장 높은 캐리어 농도 ($2.46{\times}10^{20}cm^{-3}$) 값과 가장 낮은 비저항 ($1.36{\times}10^{-3}{\Omega}cm$) 값을 나타내었다.

• Archives of Plastic Surgery
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• 제35권6호
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• pp.645-652
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• 2008

Purpose: In skin flap surgery, surgeons often encounter distal ischemia of the flap. If a powerful free radical scavenger is used, it may reduce the formation of free radical and improves the survival of flap. Thus, the present study purposed to examine whether the survival of flap can be enhanced by administering melatonin, which is known to be a powerful free radical scavenger a antioxidant molecule. Methods: We divided 40 Sprague-Dawley rats into 4 groups, 10 in each group. For the control group(n=10), we intraperitoneally injected only carrier solution once 30 minutes before the operation, and once a day for 7 days from the day of operation. Among the experimental groups, a group(n=10) was administered with dimethyl sulfoxide(DMSO), in another group(n=10), melatonin was intraperitoneally injected, and in the other(n=10) melatonin was intraperitoneally injected and applied topically(2 cc of 1% melatonin) to the operation site. Caudally based skin flaps measuring $3{\times}10cm^2$ were elevated on the mid-dorsum of the rats. and then repositioned. On the seventh postoperative day, the survival area of the flap was measured and tissues were examined under the light microscope. Results: The control group, the DMSO group, the melatonin administration group and the melatonin administration and application group showed the mean survival rates of $55.26{\pm}9.2%$, $70.29{\pm}7.47%$, $81.45{\pm}4.14%$ and $86.1{\pm}1.52%$, respectively, for $30cm^2$ of flap. Compared to the control group, the experimental groups showed a significantly high increase in survival area at significance level of 95%. Conclusion: In this study, the survival rate of flap was enhanced through the administration of melatonin after flap surgery. This suggests that melatonin not only functions as a powerful free radical scavenger and oxygen radical scavenger but also stabilizes and protects cells, and by doing so, enhances the survival of moderately injured ischemic sites in the distal end of flap.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• 센서학회지
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• 제7권4호
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• pp.254-262
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• 1998

수정진동자(QCM)위에 네 종류의 프탈로시아닌($MPc(OEH)_8$, M ${\equiv}$ Cu, Co, Sn, $H_2$) LB박막을 여러 층 적층시킨 후 순수한 질소 분위기 하에서 $NO_2$에 노출시켜 그 농도를 정량화 하였다. 사용한 네 종류의 프탈로시아닌 중에서 중심위치에 금속 이온이 자리하지 않은 $H_2Pc(OEH)_8$ 감응막이 $NO_2$에 대하여 가장 민감한 것으로 나타났다. 그러나 이 박막은 $NO_2$에 노출된 후 질소로 퍼지해도 처음의 주파수를 회복하지 못하는 비가역적인 흡착 양상을 보였다. NMR과 FTIR 스펙트럼 조사 결과 비가역적인 흡착은 빙고링과 프탈로시아닌 곁가지의 결합부위인 ether 그룹에서 일어나는 것으로 판명되었다. 따라서 비가역적으로 흡착이 일어나는 부분을 미리 고농도에서 포화시키는 방법으로 박막을 전처리 한 후 반복실험에 사용하였다. $CuPc(OEH)_8$박막 사용 시 수십 ppm 수준부터 4 ppm의 $NO_2$ 농도까지 정량화가 가능하였고 $H_2Pc(OEH)_8$ 박막의 경우에는 수 ppm부터 35 ppb까지의 낮은 농도까지 정량화가 가능하였다. 또한, 실제 대기 조건을 모사하기 위하여 운반기체를 순수한 질소 대신 공기로 교체하여 $H_2Pc(OEH)_8$ 감응막의 성능을 실험한 결과 산소의 영향으로 센싱 가능 한계가 수백 ppb 수준으로 증가하였다. 습기가 운반기체에 포함된 경우 감지 성능에 매우 큰 영향을 미쳤다.

• 한국재료학회지
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• 제9권3호
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• pp.234-239
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• 1999

PECVD(Plasma enhanced chemical vapor deposition)을 이용하여 yttria-stabilized zirconia(YSZ) 박막을 제조하였다. 반응물질로 금속유기화합물을 $Zr[TMHD]_4$와 $Y[TMHD]_3$그리고 산소를 사용하였으며, 증착온도는 $425^{\circ}C$, rf power는 0~100W까지 적용하였다. YSZ 박막은 (200)면이 기판에 평행한 입벙정상 구조를 가졌으며, 1시간 내에 $1\mu\textrm{m}$ 두께를 형성하였다. EDX에 의한 막의 성분분석 결과로부터 환산된 박막내의 $Y_2O_3$의 함량은 0-36%의 범위였다. 버블러의 온도 및 운반기체의 유량이 증가함에 따라 박막의 두께 역시 비례하여 증가하였는데, 이는 precursor의 flux 증가로 인한 박막내의 $Y_2O_3$의 함량증가에 의한 것이었다. Zr 및 Y, O는 박막의 두께에 따라 일정한 조성비를 나타내었다. 운반기체를 Ar로 하였을 때 $1000\AA$이하의 크기를 갖는 YSZ 입자들이 column 모양으로 기판에 수직하게 성장하였으며, 운반기체가 He인 경우에도 column 모양으로 성장하였으며 입도가 $1000~2000\AA$으로 Ar의 경우보다 조대해졌다. XRD 분석결과 $Y_2O_3$의 함량이 증가함에 따라 YSZ의 격자상수 값이 약간씩 증가하였다. 이는 박막 전반에 걸쳐 형성된 균열에 의해 격자변형으로 인해 발생한 응력을 완화시켰지 때문이다.