• 한국초전도학회:학술대회논문집
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• v.9
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• pp.388-391
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• 1999

Well oriented Bi2212 superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape method in which Cu-free BSCO powder mixture was' printed on copper plate and heat-treated. And we examined the effect of heat-treatment atmosphere for the superconducting properties and microstructure of Bi2212. The composition of Cu-free BSCO powder mixture was Bi$_2O_3$ : SrCO$_3$ : CaCO$_3$ = 1.2~2 : 1 : 1 and the heat-treatment for the superconducting formation reaction was performed in air, oxygen, nitrogen and low oxygen pressure. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Among the nonsuperconducting phases, it is known that the (Sr,Ca)CuO$_3$ phase restrain the formation of the Bi2212 superconducting phase. Because a kind of the nonsuperconducting phases is controled by the oxygen partial pressure, the optimum condition in which the remnants of the second phases don't leave in the fully processed conductor was determined by XRD and the critical tempera to re (Tc) analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.

• Progress in Superconductivity
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• v.7 no.1
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• pp.58-63
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• 2005

We investigated the surface oxidation behavior of cube-textured polycrystalline nickel at various oxidation conditions. Cube-textured NiO film was formed on a cube-textured polycrystalline nickel regardless of oxidation conditions but different growth behavior of NiO crystals was observed depending on the oxidation conditions. The introduction of water vapor into $O_2$ did not affect the texture evolution, but rough and porous microstructure was developed. Microstructure of NiO film tends to be denser as the oxygen partial pressure increases. It is interesting that (111) peak of theta - two theta diffraction pattern started to get stronger in air atmosphere and (111) plane became the major texture in the substrate oxidized in high purity argon gas. Small amount of high index crystallographic plane NiO peak crystal was observed when $N_{2}O$ was used as an oxidant while only (200) plane crystal was formed in dry $O_2$ atmosphere. Flat and smooth surface was changed into rough faceted one when ramping rate to oxidation temperature was faster. The grain size of NiO was decreased when the oxygen partial pressure was low. It was also observed that the modification of nickel surface suppressed the development of (200) texture.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.45-47
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• 2001

Due to pressure from threatened legislation in Europe, consumer and governmental pressure in Japan, and glob머 market considerations in the US, there is a rapidly growing interest in lead-free solderinger, Although the move to lead free soldering seems inevitable, many problems will arise in production assembly. It is generally acknowledged that the lead-free solders available offer a much s smaller process window than lead/tin, related mainly to the higher soldering temperatures which naturally result from increases of liquidus temperatures of at least 300 C. However, raising reflow temperatures from the current 220-2300 C to 250 2600 C will lead to problems with the boards and components as well as i increasing oxidation effects. There is a need to keep reflow temperatures low without reducing solderablity. Some results on benefits of inert atmospheres are discussed in this paper. For example, testing in a nitrogen atmosphere, with 300 ppm oxygen, by the N National Physical Laboratory (NPU has revealed clear benefits for ine$\pi$mg lead-free alloys, by restoring the solderability to lead/tin levels, by enabling lower soldering temperatures. However, there has been little testing over a range of oxygen levels in nitrogen and this is an important issue in determining n nitrogen supply and oven costs. Some results are reported here from work by NPL conducted for BOC in w which solderability was evaluated for tin기ead and tin/silver/copper eutectic a alloys in a wetting balance over a range of oxygen levels form 10 ppm to 21% ( (air). The studies confirm that acceptable wetting times occur in inert atmospheres a at soldering temperatures 20 to 300 C lower than are possible in air.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.528-534
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• 2012

In this study, the densification behavior and microstructural evolution of CuO were examined when this material was sintered at different temperatures in $O_2$, air and Ar atmospheres. The CuO samples maintained their phases even after prolonged sintering at $900-1100^{\circ}C$ in an oxygen atmosphere. When sintering in air, the densification was faster than it was when sintering in oxygen. However, when the samples were sintered at $1100^{\circ}C$, large pores were observed in the sample due to the phase transformation from CuO to $Cu_2O$ which accompanies the generation of oxygen gas. The pore channels in the sample became narrower as the sintering time increased, eventually undergoing a Rayleigh breakup and forming discrete isolated pores. On the other hand, CuO sintering in Ar did not contribute to the densification, as all CuO samples underwent a phase transformation to $Cu_2O$ during the heating process.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.171-176
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• 1997

UO$_2$-Gd$_2$O$_3$fuel has been sintered to study the effect of powder property and sintering atmospheres on densification and microstructure. Three types of powders have been used; AUC-UO$_2$ powder and ADU-UO$_2$ powder were mixed with Gd$_2$O$_3$ Powder, and co-milled AUC-UO$_2$ and Gd$_2$O$_3$ powder. UO$_2$-(2, 5, 10)wt% Gd$_2$O$_3$pellets have been sintered at 168$0^{\circ}C$ for 4 hours in the mixture of H$_2$ and $CO_2$ gases, of which oxygen potential has been controlled by the ratio of $CO_2$ to H$_2$ gas. Densities of UO$_2$-Gd$_2$O$_3$ fuel pellets are quite dependent on powder types, and UO$_2$-Gd$_2$O$_3$ fuel using co-milled UO$_2$ powder yields the highest density. A long range homogeneity of Gd is determined by powder mixing. As the oxygen potential of sintered atmosphere increases, the sintered densities of UO$_2$-Gd$_2$O$_3$ pellets decrease but grain size increases. In addition, (U, Gd)O$_2$ solid solution becomes more homogeneous. The UO$_2$-Gd$_2$O$_3$fuel having adequate density and homogeneous microstructure can be fabricated by co-milling powder and by high oxygen potential.

• Journal of Preventive Medicine and Public Health
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• v.22 no.2 s.26
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• pp.208-214
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• 1989

The protective effects of Panax Ginseng extract to oxygen toxicity of mice were studied under 5 ATA hyperbaric oxygen atmosphere. The findings observed are as follows: 1) Administration of Ginseng water extract manifested the prolonging survival time of mice to oxygen toxicity by hyperbaric oxygen atmosphere. After 18 hours of single Ginseng water extract administration and three days, seven days of consecutive Ginseng water extract administration showed the protective effect against oxygen toxicity. 2) Three days and seven days of consecutive Ginseng water extract administration showed the more efficient protective effect than single Ginseng Water extract administration. 3) Seven days of consecutive Ginseng water extract administration did not showed the more efficient protective effect than three days of consecutive Ginseng water extract administration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.191-191
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• 2009

$Bi_4Ti_3O_{12}$ (BiT) thin films were well developed on the Pt/Ti/$SiO_2/Si$ substrate by a metal organic decomposition (MOD) method. Oxygen was effective on the crystallization of the BiT thin films during a rapid thermal annealing process. The electrical properties of the BiT films dependant on the oxygen partial pressure were investigated. No crystalline phase was observed for the BiT film annealed at $700^{\circ}C$ under oxygen free atmosphere. However, its crystallinity was significantly evolutionned with increasing oxygen partial pressure. In addition, its dielectric and piezoelectric properties were enhanced with increasing oxygen partial pressure to 10 torr. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current and piezoelectric constant ($d_{33}$) was also considerably improved, being as 0.62 nA/$cm^2$ at 1 V and approximately 51 pm/V, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

• Journal of Powder Materials
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• v.13 no.3 s.56
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• pp.192-198
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• 2006

The nanostructured cerium oxide powders were synthesized by spray thermal decomposition process for the use as the raw materials of resistive oxygen sensor. The synthesis routes consisted of 1) spray drying of water based organic solution made from cerium nitrate hydrate ($Ce(NO_3){_3}6H_2O$) and 2) heat treatment of spray dried precursor powders at $400^{\circ}C$ in air atmosphere to remove the volatile components and identically to oxidize the cerium component. The produced powders have shown the loose structure agglomerated with extremely fine cerium oxide particles with about 15 nm and very high specific surface area ($110m^2/g$). The oxygen sensitivity, n ($Log{\propto}Log (P_{O2}/P^o)^{-n}$ and the response time, $t_{90}$ measured at $600^{\circ}C$ in the sample sintered at $1000^{\circ}C$, were about 0.25 and 3 seconds, respectively, which had much higher performances than those known in micron or $100{\sim}200nm$ sized sensors.