• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.491-491
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• 2013

A novel plasma system has been developed for 3-dimensional modification of the carbon nano-powders. Improvement of dispersion of these nano materials are studied by plasma discharge, not using chemical modification. The plasma process is considered to great advantages over wet chemical process due to environmental, economic viewpoint, and uniformity over the treated volume. The uniform dispersion is a critical factor for these material's nano composite applications. Using this plasma system, graphene, carbon black, and CNT was treated and functionalized. Several key discharge conditions such as Ar/H2/O2 or Ar/H2/NH3 gas ratio, treatment time, power, feeder's vibration frequency are investigated. Hydrophobic of graphene has turned some more into hydrophilic by reaction test with water, electrophoresis, surface contact angle test, and turbidity analysis. The oxygen content ratio in the plasma treated CNT has increased about 3.7 times than the untreatedone. In the case of graphene and carbon black, the oxygen- and nitrogen- content has been enhanced average 10%. O-H (N-H) peak, C-O (C-N) peak, and C=O (C=N) peak data have been detected by FTIR measurement and intensified compared to before-plasma treatment due to O2 or NH3 content.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 봄 학술발표회 논문집
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• pp.434-435
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• 2003

Physicochemical properties of a polymer surface significantly affect adhesion, wetting, and dyeing properties. In recent years, low temperature plasma technology has been widely used for surface modification of polymers. Surface fluorination by low temperature plasma treatment has been employed to improve the water and oily repellency of textile fabrics. However, very few results have been reported on soil release properties of the oxygen plasma treated textile fabrics. (omitted)

• Korean Chemical Engineering Research
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• 제48권3호
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• pp.355-358
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• 2010

유도 결합 저온 플라즈마를 사용하여 폴리카보네이트 시료를 처리한 후 표면 특성 변화를 분석하였다. 표면 거칠기는 플라즈마 공정조건에 상관없이 표면 처리 후에 모두 증가하였으나, 산소 분위기에서 플라즈마 처리했을 때 가장 크게 증가하였다. 표면의 화학 결합 분석에서 플라즈마 처리 전 시료의 산소 함량이 산소 플라즈마 처리 후에 43% 증가하여 표면에 친수성 극성기의 형성이 촉진되었다. 공정 변수 중, 처리 시간에 따른 접촉각 변화는 산소 분위기에서 가장 낮은 접촉각 $9.17^{\circ}$을 얻을 수 있었고, 방전 전력의 증가는 같은 처리 시간에서 빠르게 접촉각의 감소를 보여 플라즈마 표면처리 시간을 단축시키는 효과를 주었다. 그러나 방전기체 유량의 증가에 대한 접촉각 변화에 대한 영향성이 크지 않았다.

• 공업화학
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• 제34권5호
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• pp.534-540
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• 2023

일차전지 환원극의 활물질로 널리 사용되고 있는 불화탄소는 낮은 전기 전도도, 표면 에너지 및 전해질 투과도 등의 요인에 의하여 Li/CF_X 일차전지의 율속 성능 저하를 초래한다. 따라서 본 연구에서는 산소 플라즈마를 이용한 표면처리를 통하여 표면이 개질된 불화탄소를 리튬 일차전지의 환원극으로 사용하여 전지 성능을 향상시키고자 하였다. XPS 및 XRD 분석을 통해 산소 플라즈마 처리에 의해 변화된 불화탄소의 표면 화학적 특성 및 결정 구조 변화를 분석하였으며, 이에 따른 리튬 일차전지의 전기 화학적 특성에 대한 변화를 분석하고 고찰하였다. 그 결과, 탄소 대 불소비율(F/C) 비율이 가장 낮은 산소 플라즈마 처리 조건(7.5 min)에서 반이온성 C-F 결합이 가장 많이 형성되었다. 또한, 이 조건에서 제조된 불화탄소를 환원극의 활물질로 사용한 일차전지는 가장 높은 3 C의 율속 특성을 보였으며, 고율속에서도 비교적 높은 용량(550 mAh/g)을 유지하였다. 본 연구를 통하여, 산소 플라즈마 처리를 통해 불화탄소의 불소함량 및 탄소-불소 간의 결합 유형을 조정하여 고율속 성능을 가진 리튬 일차전지를 제조할 수 있었다.

• 접착 및 계면
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• 제9권1호
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• pp.9-15
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• 2008

산소 플라즈마를 이용하여 처리시간을 다르게 하면서 EVA foam 표면의 개질을 시도하였다. EVA foam 표면 특성에 대한 플라즈마 처리 효과는 FT-IR ATR, XPS, 접촉각 측정기, SEM을 통해 연구하였으며 EVA foam의 접착특성은 박리접착강도를 측정하여 확인하였다. 플라즈마를 이용한 표면처리 결과, 유기화합물의 제거, 산소함유량의 증가, 표면의 물리적 변화 효과를 얻을 수 있었으며 EVA foam의 접착특성이 향상되었다. 플라즈마 처리 시간이 길어질수록 친수성과 EVA foam 표면의 물리적 변화가 증가하였고 각각 180초와 420초 처리에서 최대치를 나타내었다. 접착력은 420초 처리에서 최고를 나타내었으며 결과적으로 EVA foam표면의 물리적 변화가 접착력에 가장 큰 영향을 미치는 것으로 나타났다.

• 공업화학
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• 제25권4호
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• pp.386-391
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• 2014

본 연구에서는 상압 저온 코로나 방전 플라즈마를 화산암재(스코리아) 분말의 살균에 적용하였다. 스코리아 분말에 Escherichia coli (E. coli) 배양액을 살포하여 균일하게 혼합한 후, 코로나 방전 플라즈마 특성 인자인 방전전력, 방전시간, 주입기체, 전극간격 등의 조건을 변화시키며 E. coli 살균효율을 조사하였다. 실험 결과 상압 저온 코로나 방전 플라즈마는 분말상의 스코리아 살균에 아주 효과적인 것으로 나타났으며, 방전전력 15 W에서 5 min 동안 살균한 결과 E. coli가 99.9% 이상 사멸하였다. 방전전력, 방전시간, 인가전압이 증가할수록 사멸율이 향상되었다. 반응기에 주입되는 기체의 종류에 따른 살균력 실험 결과, 산소 > 모사공기(산소 20%) > 질소 순으로 나타났다. 코로나 방전 플라즈마에 의한 E. coli 살균은 자외선과 활성산화종(산소라디칼, OH라디칼, 오존 등)에 의한 세포막 침식 및 에칭, 그리고 플라즈마 방전 스트리머에 의한 대장균 세포막 파괴로 설명할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.67-68
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• 2008

A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.

• 한국표면공학회지
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• 제51권2호
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• pp.133-137
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• 2018

Plasma devices such as jets, pencils, and torches have been developed as new tools that help penetration of target agents and applied to plasma medicine. However, these devices cannot be used in a large area. Therefore, we introduced a flexible plasma device, which can be treated of large area and designed as bendable plasma. In additional, in vitro model based on agarose gel was prepared that can be show effectiveness in the depth of penetration. Plasma treatment conditions such as power, time and distance can be optimized on the agarose gel wound model. The chemical structure of changed polysaccharides was predicted due to reactive excited atoms and molecules, UV photons, charged particles and reactive oxygen and nitrogen species (RONS).