• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.776-779
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• 2003

To reduce the storage space of spent fuel used at the atomic power plants in the over the world, the uranium elements contained in the spent fuel is being extracted and effectively stored. For this, the spent fuel are oxidized and deoxidized. In this study, it is produced the heat-resisting methods about the spent fuel management technology research and test facility for the spent fuel waste for spent fuel minimized. The first considered processes in the facility are the electrolytic metal reduction reactor process. Since the electrolytic metal reduction reactor is operated at the high temperature range, we have to consider the heat-resisting methods for the devices. For the heat-resisting methods, we have searched and analyzed technical reference for the heat-resisting methods. We have calculated thermal stress and strain of each devices by the commercial analysis software, ANSYS. D.S. It is experimented for inspecting confidence rate of analysis results. By using the results, we have analyzed the problems of parts and determined the heat-resisting material, commercial parts, and the size of parts and O-ring. Based on these results, it is produced the heat-resisting methods of magnesia filter, cathode, and reactor for the electrolytic metal reduction reactor.

• Journal of Information Display
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• v.13 no.3
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• pp.113-118
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• 2012

Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Journal of Welding and Joining
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• v.28 no.4
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• pp.61-66
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• 2010

Silicon nitride is widely used as an engineering ceramics because it has high strength, abrasion resistance and corrosion resistance even at high temperature. However, machining of silicon nitride is difficult due to its high hardness and brittleness. Laser assisted machining(LAM) allows effective cutting using CBN tool by locally heating the cutting part to the softening temperature of YSiAlON using the laser beam. The effect of preheating depending on process parameters were studied to find out the oxidation mechanism. If silicon nitride is sufficiently preheated, the surface is oxidized and $N_2$ gas is formed and escapes from the material, thereby making the cutting process more advantageous. During laser preheating process before machining, high temperature results in strong oxidation which makes the bloating, silicate layers and micro cracks. Using the results of these experiments, preheating characteristics and oxidation behavior were found out.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.133-137
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• 2011

Low-e glazing is classified as soft low-e glazing and hard low-e glazing. Hard low-e glazing can be temperable and its handling is comfortable because its coating film is a oxide film generated at high temperatures. But there is a fatal weakness that its insulation performance and shielding performance are lower compared to soft low-e glazing by low electrical conductivity of coating film. Soft low-e glazing is excellent because its coating film consists of Ag that is excellent electrical conductivity and it has strength that can supply various product consumers want. But soft low-e glazing has weaknesses that temperable and handling are difficult because Ag is oxidized easily. Therefore this study analyzes thermal performance of glazing by changing filling gas according to applying low-e glazing through simulation to judge performance before making sample. After this process, a comparative experimental study was done through TVS by making temperable low-e glazing.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.370-376
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• 2005

Magnesium alloys are becoming important material for light weight car body, due to their low specific density but high specific strength. However they have a poor weldability, caused high oxidization tendency and low vapor temperature. In this study, the welding performance of magnesium alloys was investigated for automobile application. The materials were rolled magnesium alloy sheet contains Al and Zn such as AZ3l , AZ6l and AZ9l. Three types of welding process were studied, that were GTAW, Laser beam welding and FSW. To evaluate the weldability, we examined the appearance of welding bead. Also we checked bead shape and internal defects such as crack and porosity on cross section of welding bead. The mechanical property was measured for welded specimen by tensile test. For determination of the strength change by welding process, the hardness profile across the welding center was measured. For the results, the tensile properties of welded specimen were decreased obviously on all welding process. For the fusion welding process such as GTAW and laser beam welding, the surface of the welding bead was covered with oxidized magnesium dust but it was removed by simple cleaning work as wipe-out with tissue. Also under cut, that caused vaporization of base metal was occurred. for the friction stir welding, there was no oxidation, under-cut or internal defects. However it had poor weld performance, the reason was cleavage fracture occurred at plastic deformation zone. For welding of magnesium alloy, the laser beam welding process was recommended.

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.3
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• pp.258-267
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• 2003

A new kind of oxygen carrier material is tested for chemical-looping combustion. NiO, CoO, $Fe_2O_3$ is chosen as metal oxide and YSZ as a binder. Hydrogen fuel is reacted with metal oxide (reduction of metal oxide) and then the reduced metal is successively oxidized by air. Dissolution method is examined to prepare the oxygen carriers. The effects of reaction temperature are measured by a TGA, mechanical strength and regenerability after 10 cycle are examined. $Fe_2O_3/YSZ$ oxygen carrier is bested in mechanical strength and we consider that NiO/YSZ after 3rd cycle are good oxygen carrier in according to reactor design.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.161-165
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• 2007

In this work, Ni thin films with different thickness from $1,523{\AA}\;to\;9,827{\AA}$ were deposited for the application of micro thermal flow sensors by a magnetron sputtering and oxidized through annealing at $450^{\circ}C$ with increasing annealing time. The initial variation of resistivity decreased radically with increasing films thickness, then gradually stabilizes as the thickness increases. The resistivity of Ni thin films with $3,075{\AA}$ increased suddenly with increasing annealing time at $450{\circ}C$, then gradually stabilizes as the thickness increases after the annealing time 9 h. In case of $3,075{\AA}\;and\;9,827{\AA}$ films, the average of TCR values, measured for the operating temperature range of $0^{\circ}C\;to\;180^{\circ}C$, were $2,413.1ppm/^{\circ}C\;and\;4,438.5ppm/^{\circ}C$, respectively. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.

• Journal of Environmental Science International
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• v.7 no.2
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• pp.203-208
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• 1998

A simple on-line measurement system consisting of a conventional peristaltic pump, a HPLC-type heater, and a flow-through spectrophotometer is introduced for the determination of chemical oxygen demand(CODI. The system was configured such that the reaction mixture in the highly concentrated surffuric acrid medium flowing through the PTFE reaction tubing was heated at 150℃ and the absorbance of dichromate was continuously moutored at 445 m. The same addation principle as in the standard procedure was employed akcept the use of CoSO4 as a new effective catalyst. To test the system, potassium hydrogen phthalate was selected as a COD standard material. With suitably optimized reaction condition, the applicable concentration range depends on the concentration of potassium dichromate in the oxidizing reagent. With 2.0×10-3 M and 5.0×10-4M dichromate, the linear dynamic range was observed up to 400 ppm and 100 ppm, respectively. The standards in the Unear ranges were shown to be completely oxidized, which was confirmed with sodium oxalate or Mohr's salt. In all cases, the typical reproduclbility for betweenruns was 2% or less. The proposed measurement system provides the valuable in- formation for the further development of automated analysis system based on the present standard procedure.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.