• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.147-148
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• 2005

In this work, recovery of semiconductive silicone rubber on oxygen plasma treatment was investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, surface methyl groups is removed and an oxidized layer containing Si atoms bound to 3 or 4 oxygens appears. The surface is later covered by a very thin layer due to migration of low-molecular-weight components from the bulk, resulting in decreasing the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber these results are probably due to reorientation of polar groups or migration of low-molecular-weight.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• 한국정밀공학회지
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• 제32권1호
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• pp.69-74
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• 2015

Cadmium telluride (CdTe) is being developed for thin film of the X-Ray detector recently. But a rough surface of the CdTe should be improved for resolution and signal speed. This paper shows the study on the improvement of surface roughness and removal rate by applying Chemical Mechanical Polishing. The conventional potassium hydroxide (KOH) based colloidal silica slurry could not realize a mirror surface without physical defects, resulting in low material removal rate and many scratches on surface. In order to enhance chemical reaction such as form oxidized layer on the surface of cadmium telluride, we used hydrogen peroxide ($H_2O_2$) as an oxidizer. Consequently, in case of 3 wt% concentration of hydrogen peroxide, the highest MRR (938 nm/min) and the lowest surface roughness ($R_{p-v}=10.69nm$, $R_a=0.8nm$) could be obtained. EDS was also used to confirm the generated oxide of cadmium telluride surface.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.304-310
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• 1998

Carbothermal reduction has been one of the important processes for the production of ceramic raw materials such as silicon carbide, silicon nitride, boron carbide, etc. The process has also been one of several trials for the recovery of ZnO from ZnO-containing waste. It usually involves two consecutive steps: the evolution of Zn vapor and its oxidation with air. In this study a ZnO-containing raw material is reduced by carbon at $1250^{\circ}C$ and the evolved Zn vapor is oxidized with air, resulting in fine powders of ZnO. computer programs, THERMO and PYROSIM developed by MINTEK, are used to simulate the process thermodynamically and the results are compared with the experimental results. It is shown that the ZnO-containing raw material can be reduced and can form fine ZnO with the yield as high as 98.7% under a proper condition. Based on these results, a process is engineered for the production of ZnO in a rotary kiln at a rate of 3 tons/day. The produced ZnO powders show properties suitable to the usual applications in ceramic industries with a purity of > 95wt% and an average particle size of ∼3${\mu}m$.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.724-731
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• 2006

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films mixed with 4-octyl-4'-(5-carboxylpentamethyleneoxy)azobenzene (denoted as 8A5H) and phospholipid(L-a-dimyristoylphosphatidylcholine, denoted as DMPC and L-a-dilauroylphosphayidylcholine, denoted as DLPC). The LB films of 8A5H, 8A5H-DMPC and 8A5H-DLPC mixture monolayers were deposited by using the LB method on the indium tin oxide(ITO) glass. The electrochemical properties measured by using cyclic voltammetry with a three-electrode system, an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode at various concentrations(0.1, 0.5, and 1.0 mol/L) of $NaClO_4$ solution. A measuring range was reduced from initial potential to -1350 mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rates were 50, 100, 150 and 200 mV/s, respectively. As a result, LB films of 8A5H and 8A5H-DLPC mixture monolayers appeared irreversible process caused by only the oxidation current from the cyclic voltammogram and LB films of 8A5H-DMPC monolayer mixture was found to be caused by a reversible oxidation-reduction process.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.688-693
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• 2001

A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1232-1236
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.