• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.773-780
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• 1996

Silicon oxide films were prepared by using five kinds of organosilicon compound as gas sources without oxygen by rf plasma-enhanced CVD (PECVD). UV light was irradiated on a substrate vertically during deposition to enhance film oxidation and ablation of carbon contamination in a deposited films. Films prepared with UV irradiation contained less carbon than those prepared without UV irradiation. The oxidation of the films was improved by UN irradiation. The effect of UV irradiation was, however, not observed when the films were prepared with tetramethy lsilane (TMS) which contained no oxygen atom. Dissociated oxygen atoms from an organosilicon compound were excited in the plasma with UV irradiation around the substrate surface and affected the enhancement of film oxidation and ablation of carbon in the films.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.760-765
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• 1996

Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of frequency on film properties of deposited films including mechanical properties. 100kHz PECVD process can deposit silicon oxide films at $23^{\circ}C$ at the power of 20W. X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and ellipsometric measurements reveal that the structural quality of the films prepared both by 100kHz process and by 13.56MHz process are very like silicon dioxide. The 100kHz process is adequate for low temperature deposition of SiOx films.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.11
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• pp.949-956
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• 2007

Pool boiling critical heat flux (CHF) of nanofluids with oxide nanoparticles of $TiO_2$ or $Al_2O_3$ was experimentally investigated under atmospheric pressure. The results showed that a dispersion of oxide nanoparticles significantly enhances the CHF over that of pure water. Moreover it was found that nanoparticles were seriously deposited on the heater surface during pool boiling of nanofluids. CHF of pure water on a nanoparticle-deposited surface, which is produced during the boiling of nanofluids, was not less than that of nanofluids. The result reveals that the CHF enhancement of nanofluids is absolutely attributed to modification of the heater surface by the nanoparticle deposition. Then, the nanoparticle-deposited surface was characterized with parameters closely related to pool boiling CHF, such as surface roughness, contact angle, and capillary wicking. Finally, reason of the CHF enhancement of nanofluids is discussed based on the changes of the parameters.

• Solar Energy
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• v.7 no.2
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• pp.7-13
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• 1987

Indium-Tin-Oxide (ITO)/Selenium heterojunction solar cells which fabricated by vacuum deposition technique and annealing process has been investigated. Prior to the Selenium deposition, a thin tellurium layer (about $10{\AA}$) was deposited onto the ITO layers to provide a sufficient mechanical bond between the Oxide and Selenium layers. The amorphous Selenium layer was deposited onto the Te-ITO layers, and then the crystallization of the amorphous Selenium was carried out using a hot plate at about $180^{\circ}C$ for 4 min. Efficient Selenium solar cells with conversion efficiency as high as 4.52% under AM1 condition has been fabricated in polycrystalline Selenium layer ($6{\mu}m$). The optimum data in manufacturing Se solar cell was listed in table.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.577-584
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• 1996

Silicon oxide films with high hardness and water repellency were prepared by microwave plasma-enhanced CVD using four kind of organosilicon compound-fluoro-alkyl silane mixtures as source gases. An argon gas was used as a carrier gas for fluoro-alkyl silane. The substrate temperatures during deposition were controlled by resistant heating at a constant value between 50 and $300^{\circ}C$. The hardness of the films increased, but the deposition rate and the contact angle for a water drop decreased with increasing substrate temperature. The number of methoxy groups also affected the water repellency and hardness. The deposited films became more inorganic with increasing substrate temperature because of the thermal dissociation of reactants.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.24-28
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• 2010

We have proposed an Buffer layer to improve the transmittance of ITO. Here, $SiO_2$ and $TiO_2$ were selected as the Buffer layer coating material. The structures of Buffer layer were designed in ITO/$SiO_2/TiO_2$/Glass and ITO/Glass/$TiO_2/SiO_2$. Then, these materials were deposited by ion-assisted deposition system. Transmittances of deposited ITO were 86.14 and 85.07%, respectively. These results show that the proposed structure has higher transmittance than the conventional ITO device.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.207-207
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• 2010

휴대용 기기의 사용이 증가하면서 전지의 고용량화와 소형화가 요구되고 있다. 특히 의료용 센서 기기에서는 소형화가 매우 중요하며 인체에 해로운 물질로 구성되지 않는 것이 바람직하다. 최근 고체전해질을 사용하는 마이크로 배터리가 개발되고 있으나, 에너지 저장용량이 작아 응용분야가 제한적이다. Silicon wafer 위에 형성된 고단차의 3차원 박막 배터리를 형성한다면 표면적 증가에 의해 에너지 저장용량 역시 크게 증가할 것이다. 따라서 고단차의 3차원 구조위에 confomal한 박막을 형성하기 위해서는 기존 물리증착방법과는 달리 새로운 step coverage가 우수한 박막증착법이 필요하다. 본 연구에서는 atomic layer deposition(ALD)으로 박막 배터리의 cathode 물질인 $LiCoO_2$를 증착하기 위한 기초연구로서 cobalt oxide 박막의 ALD 공정을 연구하였다. Cobalt +2가 전구체와 $O_3$를 교대로 공급하여 박막을 증착하고 그 박막의 물리적, 화학적, 전기적 특성을 조사하였다. 이를 통해 exposure와 기판온도가 박막의 특성에 미치는 영향을 고찰하였다. 또한 pattern wafer위에 박막을 증착하여 step coverage를 조사하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.310.2-310.2
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• 2013

For enhancement of dye-sensitized solar cell performance, TiO2 blocking layer has been used to prevent recombination between electron and hole at the conducting oxide and electrolyte interface. In solid state dye-sensitized solar cells, it is necessary to fabricate pin-hole free TiO2 blocking layer. In this work, we deposited the TiO2 blocking layer on conducting oxide by atomic layer deposition and compared the efficiency. To compare the efficiency, we fabricate solid state dye-sensitized solar cell with using CuSCN as hole transport material. We see the efficiency improve with 40nm TiO2 blocking layer and the TiO2 blocking layer morphology was characterized by SEM. Also, we used this blocking layer in TiO2/Sb2S3/ CuSCN solar cell.

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.159-164
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• 2007

Transparent aluminum oxide films were deposited on polycarbonate (PC) substrates by inductively coupled plasma (ICP) assisted reactive sputtering. the oxygen flow rate was regulated by controlling the target voltage with a proportional integrate derivative controller. The PC substrate was treated with plasma prior to the deposition in order to the enhance the adhesive strength of the $Al_2O_3$ film. The characteristics of hardness, structure, density, transmittance, deposition rate, surface roughness and residual stress were investigated to estimate the possibility for the hard coating.

• Advances in Energy Research
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• v.2 no.2
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• pp.97-104
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• 2014

A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.