• 한국표면공학회지
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• 제55권5호
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• pp.292-298
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• 2022

In this study, PEO (plasma electrolytic oxidation) film formation behavior of AZ31 Mg alloy under application of 300 Hz pulse current was studied by the analyses of V-t curve, arc generation behavior, PEO film thickness and morphology of PEO films with treatment time in 0.05 M NaOH + 0.05 M Na₂SiO₃ + 0.1 M NaF solution. PEO films was observed to grow after 10 s of application of pulse current together with generation of micro-arcs. PEO film grew linearly with treatment time at a growth rate of about 5.58 ㎛/min at 200 mA/cm² of pulse current but increasing rate of film formation voltage became lowered largely with increasing treatment time after passing about 250 V, suggesting that resistivity of PEO films during micro-arc generation decreases with increasing film formation voltage at more than 250 V.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.427-431
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• 2017

In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

• 한국진공학회지
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• 제8권2호
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• pp.136-140
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• 1999

The stability and response time of $WO_3$ thin films for EC device are critical problems being solved. Those are affected by the species of electrolyte, preparation conditions and fabricating methods of specimen. In this paper, we compared the stabilities of three kinds of tungsten oxide film in electrolyte. Each of three films was prepared by different manufacturing conditions, that is, one is a thermal oxidation film of tungsten metal deposited on pure glass substrate, another is a $WO_3$ film made on ITO glass directly, the other is a thermally oxidized film on tungsten plate. It was observed that thermally oxidized $WO_3$ films has a remarkable stability (the lifetime was above $10^6$ cycle). From these results, we found that the stability was closely related to the stoichiometric bonding between tungsten and oxygen atoms in addition to crystallinity and density of film.

• 한국안전학회지
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• 제6권3호
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• pp.27-34
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• 1991

이 논문은 폴리에틸렌 필름을 염소처리해서 부분방전에 대한 내산화폭성 및 염소처리필름과 ${\gamma}$선조사 필름의 분자운동에 대해 조사한 것이다. 1. 열소처리한 PE 필름의 표면을 연마해서 C-Cl 이 10 $\mu$m깊이까지 분포하고 있음을 알았다. 2. 염소화가 진전하면 결정화도가 감소하며 가교가 발생한다. 3. 염소화 PE는 부분 방전에 의해 생기는 오존의 산화를 억제하고, 자신은 결합했던 염소를 잃는다. 4. 염소처리를 행하며 PE 의 CH2 주쇄의 운동인 ${\gamma}$ 흡수가 염소치환에 의해 감소한다.

• 한국재료학회지
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• 제30권9호
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• pp.441-446
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• 2020

Synthesizing nanostructured thin films of oxide semiconductors is a promising approach to fabricate highly efficient photoelectrodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility as an efficient photoanode for PEC water oxidation of zinc oxide (ZnO) nanostructured thin films synthesized via a simple method combined with sputtering Zn metallic films on a fluorine-doped tin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Zn metallic films in dry air. Characterization of the structural, optical, and PEC properties of the ZnO nanostructured thin film synthesized at varying Zn sputtering powers reveals that we can obtain an optimum ZnO nanostructured thin film as PEC photoanode at a sputtering power of 40 W. The photocurrent density and optimal photocurrent conversion efficiency for the optimum ZnO nanostructured thin film photoanode are found to be 0.1 mA/㎠ and 0.51 %, respectively, at a potential of 0.72 V vs. RHE. Our results illustrate that the ZnO nanostructured thin film has promising potential as an efficient photoanode for PEC water splitting.

• 한국재료학회지
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• 제16권6호
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• pp.386-393
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• 2006

Increasing environmental concerns require to solve the problem produced due to the use of heavy metals in coating formulations. Therefore, it is necessary to develop new coating strategy employing inherently conducting polymers such as polyaniline. Polyaniline is a conductive polymer that is synthesized by oxidation polymerization, and the electrochemical and chemical polymerization are possible for the oxidation of aniline. Electrochemical oxidation polymerization produces a fine surface and although voltage control is more convenient, it require electrolytic cells, and elaborate thin film can be acquired with the polymerization. Polyaniline films were electro-polymerized on cold rolled sheets using the galvanostat mode in the oxalic acidaniline-sodium molybdate electrolyte. The structure and properties of polyaniline film were studied using Potentiostat/Galvanostat 263A, FE-SEM,, AFM, SST, Colorimetry. A high corrosion resistance of polyaniline film was observed with an increase of corrosion potential by $500{\sim}600$ mV for the substrate covered with polyaniline.

• Bulletin of the Korean Chemical Society
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• 제26권9호
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• pp.1403-1409
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• 2005

A sensitive and selective electrochemical method was developed for the amperometric determination of ascorbic acid (AA) at a glassy carbon electrode (GCE) modified with single-wall carbon nanotubesdihexadecyl hydrogen phosphate (SWNT-DHP) composite film. The SWNT-DHP composite film modified GCE was characterized with SEM. The SWNT-DHP composite film modified GCE exhibited excellent electrocatalytic behaviors toward the oxidation of AA. Compared with the bare GCE, the oxidation current of AA increased greatly and the oxidation peak potential of AA shifted negatively to about -0.018 V (vs. SCE) at the SWNT-DHP composite film modified GCE. The experimental parameters, which influence the oxidation current of AA, were optimized. Under the optimal conditions, the amperometric measurements were performed at a applied potential of -0.015 V and a linear response of AA was obtained in the range from 4 ${\times}$ $10^{-7}$ to 1 ${\times}$ $10^{-4}$ mol $L^{-1}$ and with a limit of detect (LOD) of 1.5 ${\times}$ $10^{-7}$ mol $L^{-1}$. The interferences study showed that the SWNT-DHP composite film modified GCE exhibited good sensitivity and excellent selectivity in the presence of high concentration uric acid and dopamine. The proposed procedure was successfully applied to detect AA in human urine samples with satisfactory results.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2002년도 학술대회논문집
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• pp.207-211
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• 2002

Anodizing film was prepared by anodic oxidation of pure aluminum(purity > 99.50) using DC power supply for constant current mode in an electrolytic solution of surface of sulfuric acid. Effects of pre-treatment process such as chemical polishing, acid cleaning, alkali etching before anodic oxidation, were studied to microstructures and surface morphologies. A roughness on surface of anodizing film had to be decreased for amorphous phase by anodic oxidation. A roughness on surface of anodizing film decrease as annealing temperature increased in chemical polishing.

• 한국세라믹학회지
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• 제27권5호
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• pp.645-651
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• 1990

Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.189-189
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• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.