• 한국세라믹학회지
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• 제31권7호
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• pp.777-783
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• 1994

Oxidation behavior of hot-pressed silicon nitride ceramics with various sintering additives has been investigated. The weight gain of each specimens has shown in the range of 0.11 mg/$\textrm{cm}^2$ ~3.4 mg/$\textrm{cm}^2$ at 140$0^{\circ}C$ for 192 h and eleven compositions have shown good oxidation resistance with the weight gain below 0.5 mg/$\textrm{cm}^2$. The oxidation rate has been shown to obey the parabolic rate law and the oxidized surface has consisted of $\alpha$-cristobalite and M2Si2O7 or MSiO3 (M=rare earth or transition metals) phase. The oxidation rate of each specimens has related to the eutectic temperature between additive oxide and SiO2, and ionic radius of additive oxides, respectively. From the above results, it could be concluded that the oxidation behavior of hot pressed silicon nitride is dominated by the high temperature properties of grain boundary glassy phase and the high temperature properties of grain boundary glassy phase are affected by the ionic radius of additive oxides.

• 한국재료학회지
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• 제12권5호
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.735-738
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• 2000

This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

• 열처리공학회지
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• 제26권1호
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• pp.1-6
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• 2013

The B2-ordered NiAl has attracted much attention as one of the candidates as a next generation high temperature material, because it has a high melting temperature, a low specific gravity and an excellent high temperature oxidation resistance. However, the application of NiAl to structural materials needs the improvement of its brittleness at room temperature. The study was carried out on the relation between several properties of NiAl and some variation of Ni content within NiAl phase, which means deviations from the stoichiometric composition. The main results were as follows; (i) Good ductility was obtained at the testing temperature more than 1073 K irrespective of Ni content. (ii) Increasing Ni content offered preferable tensile properties. (iii) Every NiAl with varying Ni contents showed the superior oxidation resistance.

• Nuclear Engineering and Technology
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• 제41권2호
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• pp.163-170
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• 2009

In order to evaluate high-temperature oxidation behavior of the advanced alloy cladding under LOCA conditions, isothermal oxidation tests in steam were performed with cladding specimens prepared from high burnup PWR fuel rods that were irradiated up to 79 MWd/kg. Cladding materials were $M5^{(R)}$ and $ZIRLO^{TM}$, which are Nb-containing alloys. Ring-shaped specimens were isothermally oxidized in flowing steam at temperatures from 1173 to 1473 K for the duration between 120 and 4000s. Oxidation rates were evaluated from measured oxide layer thickness and weight gain. A protective effect of the preformed corrosion layer is seen for the shorter time range at the lower temperatures. The influence of pre-hydriding is not significant for the examined range. Alloy composition change generally has small influence on oxidation in the examined temperature range, though $M5^{(R)}$ shows an obviously smaller oxidation constant at 1273 K. Consequently, the oxidation rates of the high burnup $M5^{(R)}$ and $ZIRLO^{TM}$ cladding are comparable or lower than that of unirradiated Zircaloy-4 cladding.

• 한국세라믹학회지
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• 제31권7호
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• pp.753-758
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• 1994

(100) Si and 4$^{\circ}$off (100) Si were oxidized in dry oxygen, and the differences in thermal oxidation behavior and electrical characteristics between two specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 1000 to 120$0^{\circ}C$ showed that the oxidation rates of the 5$^{\circ}$ off (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) and 4$^{\circ}$off (100) Si were 25.8, 28.6 kcal/mol and those on the linear rate constant, B/A were 56.8, 54.9 kcal/mol, respectively. Variation of C-V characteristics with the oxidation temperature showed that the flat band voltages were shifted positively and surface state charge densities decreased as the oxidation temperature increased, and the surface state charge density of the 4$^{\circ}$off (100) Si was lower than that of the (100) Si. Also considerable decrease in the density of oxidation induced stacking faults (OSF) for the 4$^{\circ}$off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer.

• 한국재료학회지
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• 제24권7호
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• pp.388-392
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• 2014

$Cu_2O$ nanowires were synthesized at large scale on copper plate by thermal oxidation in air. The effect of oxidation time and temperature on the morphology of the nanowires was examined. The oxidation time had no effect on the diameter of the nanowires, while it had a great effect on the density and the length of the nanowires. The density and the length of the nanowires increased, and then decreased, with increasing oxidation time. The oxidation temperature had a tremendous effect on the size-distribution as well as the density of the nanowires. When the oxidation temperature was $700^{\circ}C$, uniform size-distribution and high density of the nanowires was achieved. At lower and higher temperatures, the density of the nanowires was lower, and they displayed a broader size-distribution. It is suggested that the $Cu_2O$ nanowires were grown via a vapor-solid mechanism because no catalyst particles were observed at the tips of the nanowires.

• 한국산업융합학회 논문집
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• 제27권2_2호
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• pp.397-402
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• 2024

Silicon carbide materials undergo an oxidation reaction in a high-temperature oxidizing environment and show different characteristics depending on the test temperature and time. In particular, the added oxides form a secondary phase within the sintering process and exhibit different oxidation characteristics depending on the added sintering materials. Therefore, to evaluate the oxidation characteristics, the weight of the test piece and the thickness of the oxidation layer were observed, and the structure and oxidation characteristics of the material were analyzed using SEM. SEM observation showed that an oxide layer was formed on the surface of the liquid sintered silicon carbide material after it was oxidized at 1200 ℃, 1300 ℃, and 1400 ℃ for 10 hours, respectively. Then, a bending test was performed at each temperature on the test piece with the oxidation layer formed to evaluate the change in flexural strength. The strength was 466.6 MPa at 1200 ℃, 363.1 MPa at 1300 ℃, and 350.8 MPa at 1400 ℃. Al₂O₃-SiO₂ oxidized at 1200 ℃ for 10 hours showed an increase in strength of about 21.0 MPa compared to the data before the oxidation test.

• 한국분말재료학회지
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• 제18권2호
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• pp.122-128
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• 2011

This study investigated the high temperature oxidation behavior of Ni-22.4%Fe-22%Cr-6%Al (wt.%) porous metal. Two types of open porous metals with different pore sizes of 30 PPI and 40 PPI (pore per inch) were used. A 24-hour TGA test was conducted at three different temperatures of $900^{\circ}C$, $1000^{\circ}C$ and $1100^{\circ}C$. The results of the BET analysis revealed that the specific surface area increased as the pore size decreased from 30 PPI to 40 PPI. The oxidation resistance of porous metal decreased with decreasing pore size. As the temperature increased, the oxidation weight gain of the porous metal also increased. Porous metals mainly created oxides such as $Al_2O_3$, $Cr_2O_3$, $NiAl_2O_4$, and $NiCr_2O_4$. In the 40 PPI porous metal with small pore size and larger specific surface area, the depletion of stabilizing elements such as Al and Cr occurred more quickly during oxidation compared to the 30 PPI porous metal. Ni-Fe-Cr-Al porous metal's high-temperature oxidation micro-mechanism was also discussed.

• 공업화학
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• 제10권8호
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• pp.1161-1168
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• 1999

3주기 전이금속(Cr~Zn)의 산화물 및 V, Mo, W의 산화물에 대하여 temperature-programmed reduction/trmperature-programmed oxidation(TPR/TPO) 실험을 통하여 그 산화-환원 특성을 조사하였다. TPO 곡선의 산화피크는 TPR 곡선의 환원피크와 비슷하거나 약간 낮은 온도에서 나타났으며, 환원피크에 비하여 온도 폭이 넓었다. 3주기 전이금속한화물의 산화 및 환원 과정의 활성화에너지는 33~149 kJ/mol 범위에 있는 반면, V, Mo, W 산화물에서는 더 컸다. 금속산화물의 산화 및 환원 과정의 활성화에너지 변화는 금속-산소 결합세기에 비례하였다. 환원(TPR) 및 산화(TPO) 과정에 대한 활성화에너지 차이(${\Delta}E_a$)가 작을수록 o-자일렌 산화반응에서 금속산화물 촉매의 활성화에너지도 작았다. 금속한화물 촉매에서 o-자일렌 산화반응은 금속산화물 표면의 산화-환원 과정을 반복하는 Mars-van Krevelen 반응 메카니즘으로 설명될 수 있음을 확인하였다.