• Proceedings of the Korean Magnestics Society Conference
• /
• 2004.06a
• /
• pp.34-34
• /
• 2004

• Proceedings of the Korean Vacuum Society Conference
• /
• 2004.02a
• /
• pp.53-53
• /
• 2004

• Proceedings of the Korean Vacuum Society Conference
• /
• 2005.02a
• /
• pp.31-31
• /
• 2005

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.29-29
• /
• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.100-100
• /
• 2009

$TiO_2$ is widely being used as a semiconductor electrode for DSSC. Anti-recombination property and surface area of $TiO_2$ give an important influence to the DSSC efficiency. In this study, $TiO_2$ electrode was fabricated on FTO using screen printing method. Various overlayers were coated on them by dip coating in solution of saturated $Ba(NO_3)_2$, $Mg(NO_3)_2$ and $N_{2}O_{6}Sr$. They reduced the recombination of electrons from photo excited state of Ru dye. The atmospheric plasma treatment was applied to both the $TiO_2$ and each overlayer coated $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ electrode and the other samples consist of each overlayer coated $TiO_2$ electrodes. We used XRD, FE-SEM, J-V, IPCE and EIS in order to investigate characteristic.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.18.1-18.1
• /
• 2007

• Journal of the Korean Magnetics Society
• /
• v.1 no.2
• /
• pp.1-8
• /
• 1991

The electronic and magnetic structure of Fe overlayers on W(110) is determined by means of the all-electron local spin density full potential linearized augmented plane wave (FLAPW) method with a single slab approach. Charge and spin densities, magnetic moments, contact hyperfine fields, and layer projected density of states (LDOS) are presented. For bilayer Fe coverage, we find magnetic moments to be 2.90 and 2.30 ${\mu}_B$ for the surface and subsurface Fe layers, respectively, corresponding to a 18% enhancement of the total magnetization compared with the calculated bulk value (2.22${\mu}_B$);For monolayer coverage the moment is 2.56 ${\mu}_B$ which is enhanced by 16% compared to bulk. Unusual changes in the magnetic hyperfine interaction are found in going from a monolayer to a bilayer coverage. Comparison of the results to the theoretical ones of the clean Fe(110) to discuss the hybridization and the negative pressure effects. We discuss our results by comparing them to experimental results.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.252-256
• /
• 2001

We performed spectroscopic ellipsometry measurement to obtain dielectric function(DF) of ZnSe at room temperature. Proper wet chemical etching procedure was carried out to remove overlayers on top of ZnSe, and our result indicates that the previous reports on the pure DF of ZnSe have inaccurate interpretations. We constructed DF of oxide on ZnSe by using reported DFs of amorphous-Se, $GaAsO_3$, and voids through Bruggeman effective-medium approximation.

• Journal of the Korean Vacuum Society
• /
• v.3 no.1
• /
• pp.59-64
• /
• 1994

극소전자 디바이스의 고집적화와 더불어 박막배선의 선폭은 0.5$\mu$m이하까지 축소되며 초고집적 submicron 박막금속화가 진행되고 있다. 미세회로에 적용되어지는 배선재료는 인가되는 고전류밀도로 인하여 electromigration 에 의한 결함이 쉽게 발생한다는 단점이있다. 금속박막 전도체위의 dielectric overlayer는 electromigration 에 대한 passivation 효과를 보여 극소전자 디바이스의 평균수명을 향상시 킨다.본 연구에서는 박막금속화에서 dielectric overlayer의 passivation 효과를 알아보기 위하여 약 3000 $\AA$ 두께의 Al,Al-1%Si, Ag 그리고 Cu 박막배선위에 증착하여 SiO2절연보호막의 유무에 따른 박막배선 의 수명변화 및 신뢰도를 측정하였다. 박막배선에 인가된 전류밀도는 1x106 A/cm2와 1x107 A/cm2 이었다. SiO2 dielectric overlayer는 Al,Al-1%Si Ag. Cu 박막배선에서는 electromigration에 대한 보호막 혀과를 보이며 평균수명을 모두 향상시킨다. SiO2 passivation 효과는 Al, Ag, Cu 박막중 Cu 박막배선에서 가 장 크게 나타났다. SiO2 dielectric overlayer가 형성되지 않은 경우 Al 박막배선의 수명이 가장 긴 것으 로 나타났으나 SiO2 가 형성된 경우는 Cu 박막배선의 수명이 가장 길게 나타났다.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.433-437
• /
• 2002

Impact-collision ion scattering spectroscopy was applied to study the geometrical structure of epitaxially grown TiO layers on the MgO(100) surface. Hetero-epitaxial TiO layer was formed by thermal evaporation of titanium onto the MgO(100) surface followed by the exposure to oxygen at $400{\circ}$. The well-ordered TiO structure was confirmed by the impact-collision ion scattering spectroscopy and reflection high energy electron diffraction patterns. It is revealed that the Ti and O atoms are located on the on-top site of the MgO(100) surface and the TiO overlayers are composed of little three dimensional islands.