• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.701-702
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• 2010

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.3
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• pp.217-223
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• 2016

In this research, a continuous roll-to-roll screen printing system was developed using a flat screen. It has a newly devised sliding mechanism of screen printing module, which can be controlled accurately in sync with a moving web, driven by a roll-to-roll tension control and web-guiding system. In addition, the real-time precision alignment module that consists of a vision camera and an $X-Y-{\theta}$ alignment stage was implemented. With this developed system, the feasibility of continuous printing with minimum pattern width below $60{\mu}m$ was verified, and an overlay of ${\pm}60{\mu}m$ between the laser-patterned reference mark and the printed mark on a 300-mm-wide film was achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.361-361
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• 2010

노광을 통해 형성되는 패턴 단위를 Shot이라 부르며, 이때 노광되는 각 Shot은 Wafer상에 이전 Layer에서 형성되어 있는 Shot 위에 정확히 중첩되어 형성 시켜야하며, 노광된 Shot이 중첩되어야 할 이전 Layer의 Shot에 대해 얼마만큼의 위치적 오차를 가지고 형성 되었는가 하는 것은 중첩위치오차 (Overlay Alignment Error)로 계측 된다. 이렇게 계측된 중첩위치오차는 현재 진행된 Lot에 대한 재 공정 필요 여부를 결정하거나 다음 Lot 공정을 진행할 때 각 Shot를 이전 Layer Shot에 정확히 중첩시키기 위해 얼마만큼의 위치 보정이 필요한지를 결정하는데 사용된다. 이처럼 Device Node의 Shrink로 인해 엄격한 허용도를 만족시키기 위해서는 Overlay 측정 정확도의 향상이 매우 중요해 지고 있다. 본 논문에서는 Halogen Lamp 대비 Led의 Light Intensity 부분에 대해 중점적으로 실험 하였으며, RBG Type의 Led는 Halogen Lamp Wavelength (광대역) 400nm ~ 800nm가 모두 포함된 White Light Source에서 특정한 단일파장대역 600nm ~ 650nm (가시광선 Led 영역)에서 계측하는 Layer에 대해 적용 가능성을 제시하였다.

• KIPS Transactions on Software and Data Engineering
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• v.12 no.3
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• pp.141-148
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• 2023

Accurate overlay metrology is essential to achieve high yields of semiconductor products. Overlay metrology performance is greatly affected by overlay target design and measurement method. Therefore, in order to improve the performance of the overlay target, measurement methods applicable to various targets are required. In this study, we propose a new algorithm that can measure image-based overlay. The proposed measurement algorithm can estimate the sub-pixel position by using a motion vector. The motion vector may estimate the position of the sub-pixel unit by applying a quadratic equation model through polynomial expansion using pixels in the selected region. The measurement method using the motion vector can calculate the stacking error in all directions at once, unlike the existing correlation coefficient-based measurement method that calculates the stacking error on the X-axis and the Y-axis, respectively. Therefore, more accurate overlay measurement is possible by reflecting the relationship between the X-axis and the Y-axis. However, since the amount of computation is increased compared to the existing correlation coefficient-based algorithm, more computation time may be required. The purpose of this study is not to present an algorithm improved over the existing method, but to suggest a direction for a new measurement method. Through the experimental results, it was confirmed that measurement results similar to those of the existing method could be obtained.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.6
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• pp.21-25
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• 2009

• International Journal of Highway Engineering
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• v.12 no.4
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• pp.71-78
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• 2010

The road safety depend on many road factors like vertical alignment, horizontal alignment and road cross section angle. These data are hardly to get with drawings, and the real data are differ from drawings because of road pavement overlay, etc. To get these data, so many time and cost are needed, moreover it is dangerous work in heavy traffic road. In this study we obtained the road safety data with RoSSAV(Road Safety Survey & Analysis Vehicle) of Korea Institute of Construction Technology in accordance with traffic flow, and make analysis of road safety with the vertical alignment, horizontal alignment and road cross section angle data. We derived the safety improvement method in Young-dong accident prone spot and described detail method in this paper.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.19 no.2
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• pp.137-146
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• 2001

Route selection needs the analysis function of GSIS to analyze and manipulate a lot of spatial information efficiently. Therefore, it needs the linkage of system requiring the knowledge and the experience of experts as a method that can estimate each quantitative route for an efficient route selection. In this study, the route selection model through construction and analysis procedure of position information using GSIS were presented, and route selection system linked with expert system was developed. This system is easy to be used and managed for presenting route alignment according to conditions as a graphic user interface environmental window system by applying three tiers based object-oriented method. Using GSIS, the various information required for route selections in database was constructed, the characteristics of subject area by executing three-dimensional terrain analysis was grasped effectively, and the control point through buffering, overlay and location operation was extracted. Three alternative routes between a beginning point and an end point inputted by route selection system were selected. Therefore, the applications of the route selection system are presented by applying this system to the real study area.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.96-103
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• 1995

This art~cle reports on the formation of T - Gate with O.1$\mu$m foot and 0.4$\mu$m head width at PMMA/P( MMA/MAA) resist structure using a 30KV electron beam lithography system. From the result of Monte Carlo simulation on PMMA/P( MMA/MAA)/GaAs, we obtain the dissipation energy ratio of forwardscattered electron and backscattered electron within 0.1$\mu$m scattering radius is 19.5 : 1 0.1$\mu$m T - gate has been formed with 30KV gaussian electron beam at a 440$\mu C/\textrm{cm}^2$ dosage. The gamma value of PMMA and P(MMA/MAA) at MIBK : IPA=l : 1 developer was 2.3. The overlay accuracy(3$\sigma$) from mix-andmatch of optical stepper and Ekeam lithography system for fabricating HEMT device is accomplished below 0.1$\mu$m.