• Journal of Industrial Technology
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• v.32 no.A
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• pp.115-118
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• 2012

Recently, there are a lot of papers in order to replace the electrolytic capacitor into the film capacitor in output of PFC(Power Factor Correction). However, the film capacitor, which has capacitance of low values, causes a large ripple voltage in output of PFC. The LED drivers are connected series in the output of PFC and affected by the magnitude of voltage ripple. In this paper, we have compared the fixed frequency method with the variable frequency for the constant-current control and propose the control method to avoid the sub-harmonic oscillation in the variable input voltage. An 80W PFC, using film capacitors instead of electrolytic capacitors, and LED driver has been built and compared the fixed frequency control method with the variable frequency control method.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1393-1397
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• 2009

A high-speed wavelength swept laser, which is based on oscillation characteristics of a fiber Fabry-Perot tunable filter, is described. The laser is constructed by using a semiconductor optical amplifier, a fiber Fabry-Perot tunable filter, and 3.348 km fiber ring cavity. The wavelength sweeps are repeatatively generated with the repetition period of 61 kHz which is the first parallel oscillation frequency of the Fabry-Perot tunable filter for the low power consumption. Mode-locking is implemented by 3.348 km fiber ring cavity for matching the fundamental of cavity roundtrip time to the sweep period. The wavelength tuning range of the laser is 87 nm(FWHM) and the average output power is 1.284 mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.4
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• pp.421-427
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• 2004

A low cost solution employing harmonic oscillation to the frequency synthesizer at 5.8 ㎓ is proposed. The proposed frequency synthesizer is composed of 2.9 ㎓ PLL chip, 2.9 ㎓ oscillator, and 5.8 ㎓ buffer amplifier The measured data shows a frequency Outing range of 290 ㎒, ranging from 5.65 to 5.94 ㎓ about 0.5 ㏈m of output power, and a phase noise of -107.67 ㏈c/㎐ at the 100 ㎑ offset frequency. All spurious signals including fundamental oscillation power(2.9 ㎓) are suppressed at least 15 ㏈c than the desired second harmonic signal.

• Journal of electromagnetic engineering and science
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• v.17 no.3
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• pp.147-152
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• 2017

This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency ($f_{max}$) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.585-587
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• 2009

A large diameter slot waveguide made backward wave oscillator is investigated experimentally. The parameters of slow wave structure are chosen so that the oscillation frequency is about 20 GHz. Plasma is produced by the beam and it has favorable effects on beam propagation and Cherncov oscillation. The output power strongly enhanced when the guiding magnetic field approaches to the fundamental electron cyclotron resonance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.523-526
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• 2001

In this paper, we design and fabricate the high-efficiency and low-power switched-capacitor DC-DC converter. This converter consists of internal oscillator, output driver and output switches. The internal oscillator has 100kHz oscillation frequency and the output switches composed of one pMOS transistor and three nMOS transistors. According to the configuration of two external capacitors, the converter has three functions that are the Inverter, Doubler and Divider. The proposed converter is fabricated through the 0.8$\mu\textrm{m}$ 2-poly, 2-metal CMOS process. The simulation and experimental result for fabricated IC show that the proposed converter has the voltage conversion efficiency of 98% and power efficiency more than 95%.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.1-10
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• 1998

A new oscillator configuration is presented and tested for Josephson voltage standard operated at the cryogenic(4.2K) temperature. Features of active devices are investigated in aspects of 1/f noise, output power, and current collapse at low temperature. The output power of oscillator is optimized by a nonlinear design approach called Harmonic Two Signal Method(HTSM). The embedding newworks of the generalized six oscillators with tow loads are derived. A HEMT oscilliator is designed in X-Band for the Josephson voltage standard and tested at room and cryogenic(4.2K) temperatures. Oscillation frequency, output power, C/N ratio, and fequency stability are compared at room and low temperatures.

• Journal of electromagnetic engineering and science
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• v.18 no.2
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• pp.141-143
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• 2018

Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of -3.9 dBm at 111 GHz with a phase noise of -75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of -2.0 dBm at 117 GHz with a phase noise of -77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power.

• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• The KSFM Journal of Fluid Machinery
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• v.10 no.1 s.40
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• pp.34-40
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• 2007

In this study, the characteristic of a vane pump of automotive power steering system is numerically analyzed. The vane pump changes the energy level of operation fluid by converting mechanical input power to hydraulic output. To simulate this mechanism, moving mesh technique is adopted. As a result, the flow rate and pressure are obtained by numerical analysis. The flow rate agrees well with the experimental data. Moreover, the variation and oscillation of the pressure around the rotating vane are observed. As a result of flow characteristics, The difference of pressure between both side of vane tip causes the back flow into the rotor. As the rotational velocity increases, the flow rate at the outlet and the pressure in the vane tip rises with higher amplitude of oscillation. In order to reducing the oscillation, the design of devices for decreasing the cross-area of the outlet part and returning the flow from the outlet to the inlet is required.