• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.1A
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• pp.115-124
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• 2007

In this paper, the I/Q mismatch problem between the transmission line and antenna switch is solved by a new CPW matching circuit for a VoWLAN terminal with 54 Mbps communication speed through the IEEE 802.11 b/g CCK/OFDM. I/Q performances with the new matching circuit are analyzed and improved by the output spectrum mask, the characteristics of the EVM(Error Vector Magnitude) due to the nonlinear CCK/OFDM demodulation data, and receiver's sensitivity.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.23-28
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• 2007

A dual-band GaAs FET low noise amplifier (LNA) with an input LC-tank circuit is designed using inductance source feedback for wireless LAN, and output matching is realized with low-pass Cheyshev filter impedance transforming circuit. Some design techniques for dual band LNA have been developed including input and output design equations. The measured results shows close agreement with the predicted performance.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.1
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• pp.13-20
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• 2001

In this appear, we proposed the new current mirror has large output resistance and excellent current matching characteristics. If supply voltage were lowered under the conventional CMOS operational amplifier, the wing of out put power could be restricted. So, the paper suggests a new way of differential operational amplifier circuit to solve the problem. The paper proposes that a new current mirror increases output swing and has a stable operation. We compare and verify characteristics of the proposed current mirror with the cascoded current mirror and the regulated current mirror through simulation.

• ETRI Journal
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• v.38 no.5
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• pp.972-980
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• 2016

An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.3 s.345
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• pp.68-77
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• 2006

This paper presents a new Design-for-Testability (DfT) circuit for 4.5-5.5GHz low noise amplifiers (LNAs). The DfT circuit measures gain, noise figure, input impedance, input return loss, and output signal-to-noise ratio for the LNA without external expensive equipment. The DfT circuit is designed using 0.18m SiGe technology. The circuit utilizes input impedance matching and DC output voltage measurements. The technique is simple and inexpensive.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1656-1663
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• 2016

A capacitive wireless power transfer (C-WPT) system uses an electric field to transmit power through a physical isolation barrier which forms a pair of ac link capacitors between the metal plates. However, the physical dimension and low dielectric constant of the interface medium severely limit the effective link capacitance to a level comparable to the main switch output capacitance of the transmitting circuit, which thus narrows the soft-switching range in the light load condition. Moreover, by fundamental limit analysis, it can be proved that such a low link capacitance increases operating frequency and capacitor voltage stress in the full load condition. In order to handle these problems, this paper investigates optimal design of double matching transformer networks for C-WPT. Using mathematical analysis with fundamental harmonic approximation, a design guideline is presented to avoid unnecessarily high frequency operation, to suppress the voltage stress on the link capacitors, and to achieve wide ZVS range even with low link capacitance. Simulation and hardware implementation are performed on a 5-W prototype system equipped with a 256-pF link capacitance and a 200-pF switch output capacitance. Results show that the proposed scheme ensures zero-voltage-switching from full load to 10% load, and the switching frequency and the link capacitor voltage stress are kept below 250 kHz and 452 V, respectively, in the full load condition.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.426-429
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• 1988

A simple design method of a single balanced MMIC mixer is described. It uses small signal S11 and capacitive load for the input matching circuit and the output loading circuit, respectively. It is found that the conversion gain of the FET mixer is independent of FET gate width. The fabricated mixer has 2.5 dB conversion gain at 9 GHz with 50 ohm IF load and 2 dBm local oscillator power.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.312-318
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• 2016

This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the $0.25{\mu}m$ GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.85-96
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• 2000

It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.100-105
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• 2006

In this paper, a low noise amplifier(LNA) in a receiver of a low noise block down converter (LNB) for direct broadcasting service(DBS) is implemented using GaAs HEMT. The LNA is designed for the bandwidth of 11.7 GHz-12.2 GHz. The two-stage LNA consists of a input matching circuit, a output matching circuit, DC-blocks and RF-chokes. Experimental results of the LNA show the noise figure less than 1.4 dB, the gain greater than 23 dB and the flatness of 1 dB in the bandwidth of 11.7 to 12.2 GHz.