• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.2
• /
• pp.15-20
• /
• 2010

In this study, AZO (Al: 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5~20 mTorr), $O_2$ gas flow rate(0~3%) and the fixed substrate temperature of 200 f by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 nm) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3% of $O_2$ gas flow rate. The optical transmittance of AZO thin films is measured as 80% in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the $O_2$ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration ($2.63\;{\times}\;10^{20}\;cm^{-3}$) and the minimum resistivity ($4.35\;{\times}\;10^{-3}\;{\Omega}cm$) are obtained for the AZO thin film fabricated at 5mTorr of working pressure and 0% of $O_2$ gas flow rate.

• Journal of the Korean Magnetics Society
• /
• v.27 no.3
• /
• pp.87-91
• /
• 2017

Carbon-encapsulated Ni and metal Ni nanoparticles were synthesized by levitational gas condensation (LGC). Methane ($CH_4$) gas was used to coat the surface of the Ni nanoparticles. The Ni particles had a core diameter of 10 nm, and were covered by 2~3 nm thin carbon layers with multi-shells structure.The low magnetization comparing with the Ni nanoparticles without carbon-shell results in the coexistence of nonmagnetic carbon and a large surface spin percentage with disordered magnetization orientation for the nanoparticles. Biginelli reactions in the presence of L-proline and Ni and carbon encapsulated Ni nanoparticles were carried out to change the ratio between stereoisomers. The obtained S-enantiomers for 3,4-dihydropyrimidine (DHPM) using catalysts of Ni, and Ni@C was an excess of about ${\Delta}{\sim}7.4%$ and ${\Delta}{\sim}19.6%$, respectively. The nanopowders were fully recovered using magnet to reuse as a catalyst. The Ni@C was shown at same yield to formation of 3,4-DHPM, though it was recycled for catalyst in the reaction.

• Korean Journal of Materials Research
• /
• v.17 no.5
• /
• pp.256-262
• /
• 2007

Effects of interlayer and the combination of different coating methods on the mechanical and corrosion behaviors of TiN and CrN coated on 420 stainless steel have been studied. STS 420 specimen were tempered at $300^{\circ}C$ for 1 hr in vacuum furnace. The TiN and CrN thin film with 2 ${\mu}m$ thickness were coated by arc ion plating and DC magnetron sputtering following the formation of interlayer for pure titanium and chromium with 0.2 ${\mu}m$ thickness. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and roughness tester. Mechanical properties such as hardness and adhesion also were examined. XRD patterns of TiN thin films showed that preferred TiN (111) orientation was observed. The peaks of CrN (111) and $Cr_2N$ (300) were only observed in CrN thin films deposited by arc ion plating. Both TiN and CrN deposited by arc ion plating had the higher adhesion and hardness compared to those formed by magnetron sputtering. The specimen of TiN and CrN on which interlayer deposited by magnetron sputtering and thin film deposited by arc ion plating had the highest adhesion with 22.2 N and 19.2 N. respectively. TiN and CrN samples shown the most noble corrosion potentials when the interlayers were deposited by using magnetron sputtering and the metal nitrides were deposited by using arc ion plating. The most noble corrosion potentials of TiN and CrN were found to be approximately -170 and -70 mV， respectively.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.178-184
• /
• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• Korean Journal of Materials Research
• /
• v.10 no.4
• /
• pp.270-275
• /
• 2000

The Pt/YMnO$_3$/Y$_2$O$_3$/Si structure for metal/ferroelectric/insulator/semiconductor(MFIS)-FET was fabricated and effect of $Y_2$O$_3$layer on the properties of MFIS structure was investigated. The $Y_2$O$_3$ thin films on p-type Si(111) substrate deposited by Pulsed Laser Deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO$_3$ thin films deposited directly on p-type Si (111) by MOCVD resulted in Mn deficient layer between Si and YMnO$_3$. However, YMnO$_3$ thin films having good quality and stoichiometric composition can be obtained by adopting $Y_2$O$_3$ buffer layer. The memory window of the $Y_2$O$_3$thin films with YMnO$_3$ film is greater than that of the YMnO$_3$ thin films without $Y_2$O$_3$ film after the annealing at 85$0^{\circ}C$ in vacuum ambient(100mtorr). The memory window is 1.3V at an applied voltage of 5V.

• Journal of the Korea Computer Graphics Society
• /
• v.17 no.3
• /
• pp.43-50
• /
• 2011

We present a trade-off technique for fast but qualitative planar shape deformation using a layered mesh. We construct a layered mesh that is embedding a planar input shape; the upper-layer is denoted as a control mesh and the other lower-layer as a shape mesh that is defined by mean value coordinates relative to the control mesh. First, we try to preserve some shape properties including user constraints for the control mesh by means of a known existing nonlinear least square optimization technique, which produces deformed positions of the control mesh vertices. Then, we compute the deformed positions of the shape mesh vertices indirectly from the deformed control mesh by means of simple coordinates computation. The control mesh consists of a small number of vertices while the shape layer contains relatively a large number of vertices in order to embed the input shape as tightly as possible. Since the time-consuming optimization technique is applied only to the control mesh, the overall execution is extremely fast; however, the quality of deformation is sacrificed due to the sacrificed quality of the control mesh and its relativity to the shape mesh. In order to change the deformation behavior and consequently to compensate the quality sacrifice, we present a method to control the deformation stiffness by incorporating the orientation into the user constraints. According to our experiments, the proposed technique produces a planar shape deformation fast enough for real-time applications on limited embedded systems such as cell phones and tablet PCs.

• The Journal of Engineering Geology
• /
• v.27 no.2
• /
• pp.153-164
• /
• 2017

The geological factors for causing ground subsidence are very diverse. It can be affected by any geological or extrinsic influences, and even within the same geological factor, the soil depression impact factor can be determined by different physical properties. As a result of reviewing a large number of papers and case histories, it can be seen that there are seven categories of ground subsidence factors. The depth and thickness of the overburden can affect the subsidence depending on the existence of the cavity, whereas the depth and orientation of the boundary between soil and rock are dominant factors in the ground composed of soil and rock. In case of soil layers, more various influencing factors exist such as type of soil, shear strength, relative density and degree of compaction, dry unit weight, water content, and liquid limit. The type of rock, distance from the main fracture and RQD can be influential factors in the bedrock. When approaching from the hydrogeological point of view, the rainfall intensity, the distance and the depth from the main channel, the coefficient of permeability and fluctuation of ground water level can influence to ground subsidence. It is also possible that the ground subsidence can be affected by external factors such as the depth of excavation and distance from the earth retaining wall, groundwater treatment methods at excavation work, and existence of artificial facilities such as sewer pipes. It is estimated that to evaluate the ground subsidence factor during the construction of underground structures in urban areas will be essential. It is expected that ground subsidence factors examined in this study will contribute for the reliable evaluation of the ground subsidence risk.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.277-277
• /
• 2007

$(Bi,La)_4Ti_3O_{12}$ (BLT) 물질은 결정 방향에 따른 강한 이방성의 강유전 특성을 나타낸다. 따라서 BLT 박막을 이용하여 FeRAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 현재까지 연구된 BLT 박막의 방향성 조절 결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 중착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성 (random orientation)을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법 (sputtering deposition method), PLD법 (pulsed laser deposition method) 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요 없게 된다. PVD 증착법의 적용을 위해서는 타겟 (target)의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표 되지 않고 있다. 본 실험에서는 $Bi_2O_3$, $TiO_2$ and $La_2O_3$ 분말을 이용하여 최적의 조성을 구하기 위하여 Bi양을 변화시키며 타겟을 제조 하였다. 혼합된 분말을 하소 후 pallet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 표면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. Bi양이 3.28몰 첨가된 조성에서 최대의 잔류분극 (2Pr) 값을 얻었고, 이때의 값은 약 $18{\mu}C/cm^2$ 정도였다. 최적화된 조성 ($Bi_{3.28}La_{0.75}Ti_3O_{12}$)으로 BLT 타겟을 제조하여 PLD법으로 박막을 제조하였다. 박막 제조 시 압력은 $1{\times}10^{-1}\;{\sim}\;1{\times}10^{-4}\;Torr$ 범위에서 변화시켰다. $1{\times}10^{-1}\;Torr$ 압력을 제외하고는 모든 압력에서 BLT 박막이 증착되었다. 중착된 박막을 $650\;{\sim}\;800^{\circ}C$에서 30분간 열처리를 실시하고 전기적 특성을 평가한 결과, $1{\times}10^{-2}\;Torr$에서 증착한 박막에서 양호한 P-V (polarization-voltage) 이력곡선을 얻을 수 있었고, 이때의 잔류분극 (2Pr) 값은 약 $6\;{\mu}C/cm^2$ 이었다. 주사전자현미경 (SEM)을 이용하여 BLT 박막 표면의 미세구조도 관찰하였는데, 스핀코팅 법으로 증착한 경우에 관찰되었던 조대화된 입자들은 관찰되지 않았고, 상당히 양호한 입자 크기 균일도를 나타내었다.

• Journal of the Korean Society of Groundwater Environment
• /
• v.6 no.3
• /
• pp.111-119
• /
• 1999

The purpose of this study is the simulation of discontinuous rockmass and identification of characteristics of discontinuity network as a branch of the study on characteristics of groundwater system in discontinuous rockmass for evaluation of safety on disposal site of radioactive waste. In this study the site for LPG underground storage was selected for the similarities of the conditions which were required for disposal site of radioactive waste. Through the identification of hydraulic properties. characteristics of discontinuities and selection of discontinuity model around LPG underground storage facility. the applications of discrete fracture network model were evaluated for the analysis of pathway. The orientation and spatial density of discontinuities are primarily important elements for the simulation of groundwater and solute transportation in discrete fracture network model. In this study three fracture sets identified and the spatial intensity (P$_{32}$) of discontinuities is revealed as 0.85 $m^2$/㎥. The conductive fracture intensity (P$_{32c}$) estimated for the simulation area around propane cavern (200${\times}$200${\times}$200) is 0.536 $m^2$/㎥. Truncated conductive fracture intensity (T-P$_{32c}$) is calculated as 0.26 $m^2$/㎥ by eliminating the fracture with the iowest transmissivity and based on this value the pathway from the water curtain to PC 2. PC 3 analyzed.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1263-1269
• /
• 1999

An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.