• Corrosion Science and Technology
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• v.18 no.4
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• pp.121-128
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• 2019

Electrochemical Impedance Spectroscopy (EIS) was used to predict corrosion behaviour of metallic Cultural Heritage assets in two monitoring campaigns: 1) an iron bar chain exposed indoor from over 500 years in the Notre Dame Cathedral in Amiens (France); and 2) a large weathering steel sculpture exposed outdoor from tens of years in Ferrara (Italy). The EIS portable instrument employed was battery operated. In situ EIS measurements on the iron chain could be used to investigate the phenomena involved in the electrochemical interfaces among various corrosion products and assess and predict their corrosion behaviour in different areas of the Cathedral. Meanwhile, the sculpture of weathering steel, like most outdoor artefacts, showed rust layers of different chemical composition and colour depending on the orientation of metal plates. The EIS monitoring campaign was carried out on different areas of the artefact surface, allowing assessment of their protective effectiveness. Results of EIS measurements evidenced how employing a simple test that could be performed in situ without damaging the artefacts surface is possible to quickly gain knowledge of the conservation state of an artefact and highlight potential danger conditions.

• Journal of the Korean Society for Heat Treatment
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• v.37 no.2
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• pp.66-72
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• 2024

To investigate the effect of deformation condition on microstructure and texture formation behaviors of AZ91 magnesium alloy with three kinds of initial texure during high-temperature deformation, plane strain compression tests were carried out at high-temperature deformation conditions - temperature of 673 K~723 K, strain rate of 5 × 10^-3s^-1, up to a strain of -1.0. To clarify the texture formation behavior and crystal orientaion distribution, X-ray diffraction and EBSD measurement were conducted on mid-plane section of the specimens after electroltytic polishing. As a result of this study, it is found that the main component and the accumulation of pole density vary depending on initial texture and deformation caondition, and the formation and development basal texture components ({0001} <$10\bar{1}0$>) were observed regardless of the initial texure in all case of specimens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.145-152
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• 2007

The evolution dynamics of nanoscale Ge islands on both Si (001) and (113) surfaces is explored using ultraviolet photoelectron emission microscopy (UV-PEEM). Real-time monitoring of the in-situ growth of the Ge island structures can allow us to study the variation of the size, the shape and the density of the nanostructures. For Ge depositions greater than ${\sim}4$ monolayer (ML) with a growth rate of ${\sim}0.4\;ML/min$ at temperatures of $450-550^{\circ}C$, we observed island nucleation on both surfaces indicating the transition from strained layer to island structure. During continuous deposition the circular islands grew larger via ripening processes. AFM measurements showed that the islands grown on Si (001) were dome-shaped while the islands on Si (113) were multiple-side faceted with flat tops of (113)-orientation. In contrast, for Ge deposition with a lower growth rate of ${\sim}0.15\;ML/min$ on Si(113), we observed the shape transition from circular into elongated island structures. The elongated islands grew longer along the [$33\bar{2}$] during continuous Ge deposition. The shape evolution of the islands is discussed in terms of strain relaxation and kinetic effects.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Korean Journal of Cognitive Science
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• v.34 no.3
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• pp.153-180
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• 2023

Previous research on the action effect had shown how simple action towards a stimulus can enhance the processing of that stimulus in subsequent visual search task (Buttaccio & Hahn, 2011; Weidler & Abrams, 2014). In four experiments, we investigated whether semantic representation of action word can induce the same attentional boost towards that stimulus and whether the type of action performed can modulate the action effect. In experiment 1, we replicated the same experimental paradigm displayed in previous studies. Participants were first shown an action word cue - "go" or "no". When the action cue was "go", participants were to press a designated key, but not to when the action cue was "no". Next, participants performed a visual search task, in which they reported the orientation of a tilted bar. The target could appear on top of the previously shown prime object (valid), or not (invalid). Reaction times (RTs) to the search task were measure for analysis and comparison, and the action effect had been replicated. In experiment 2, participants were instructed to respond with the keyboard for the action task, and to respond with the joystick for the visual search task. In experiment 3, participants were instructed not to press any key on the onset of prime, and then perform the visual search task to isolate the effect of semantic representation. Lastly, in experiment 4, participants were instructed to press separate keys for "go" and "no" on the onset of prime, and then perform the visual search task. Results indicate that semantic representation alone did not modulate the action effect, regardless of type of action and medium of action.