• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1539-1542
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• 2007

We have synthesized novel organic passivation materials to protect organic thin film transistors (OTFTs) from $H_2O$ and $O_2$ using polyvinyl alcohol (PVA)/layered silicate (SWN) nano composite system. Up to 3 wt% of layered silicate to PVA, very homogeneous nanocomposite solution was prepared.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.181-181
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• 2013

Recently, nanostructure and the molecular orientation of organic thin films have been largely paid attention due to its importance in organic electronics such as organic thin film transistors (OTFTs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs). Among various methods, the diffraction and scattering techniques based on synchrotron x-rays have shown powerful results in organic thin film systems. In this work, we introduce the in-situ annealing system installed at PLS-II (Pohang Light Source II) for organic thin films by simultaneously conducting various x-ray scattering measurements of x-ray reflectivity, conventional x-ray scattering, grazing incidence wide angle x-ray scattering (GI-WAXS) and so on. Using the in-situ measurement, we could obtain real time variation of nanostructure as well as molecular orientation during thermal annealing in metal-phthalocyanine thin films. The variation of surface and interface also could be simultaneously investigated by the x-ray reflectivity measurement.

• Journal of the Korean Applied Science and Technology
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• v.30 no.2
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• pp.290-296
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• 2013

We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

• Journal of the Korean Applied Science and Technology
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• v.29 no.2
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• pp.199-204
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• 2012

Organic thin-film transistors (OTFTs) have received considerable attention because their potential applications for nano-scale thin-film structures have been widely researched for large-scale integration industries, such as semiconductors and displays. However, research in developing n-type materials and devices has been relatively shortage than developing p-type materials. Therefore, we report on the fabrication of top-contact [6,6]-phenyl-C61-butyricacidmethylester (PCBM) TFTs by using three different solvent, o-dichlorobenzene, toluene and chloroform. An appropriate choice of solvent shows that the electrical characteristics of PCBM TFTs can be improved. Moreover, our PCBM TFTs with the cross-linked Poly(4-vinylphenol) dielectric layer exhibits the most pronounced improvements in terms of the field-effect mobility (${\sim}0.034cm^2/Vs$) and the on/off current ratio (${\sim}1.3{\times}10^5$) for our results. From these results, it can be concluded that solvent-modification of an organic semiconductor in PCBM TFTs is useful and can be extended to further investigations on the PCBM TFTs having polymeric gate dielectrics. It is expected that process optimizations using solution-processing of organic semiconductor materials will allow the development of the n-type organic TFTs for low-cost electronics and various electronic applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.180-184
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• 2017

In this study, we examine the electrical properties of diketopyrrolopyrrole (DPP) containing polymer semiconductors that have been reported to show high performance with ambipolar characteristics. We prepared three different DPP based polymer semiconductors (PDPPTPT, PDPP3T, and PDPP2T-TT) and fabricated organic thin film transistors (OTFTs) with ambipolar polymer semiconductors as an active layer. All three DPP polymers showed only p-type properties at initial measurements. However, after annealing in vacuum oven for 24 hours, it was found that the DPP based polymers have both p-type and n-type properties. It is speculated that the residual impurities supposedly regarded as a strong electron trap source were eliminated during the vacuum process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.6-10
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• 2016

In this study, the effects of soft baking temperature on the solution derived ZTO (Zn-Sn-O) TFTs (thin-film transistors) as a In-free oxide semiconductor were investigated. In spite of the same hard baking at high temperature($600^{\circ}C$), the electrical properties of ZTO TFT was greatly changed by a small difference in soft baking temperature($180{\sim}250^{\circ}C$). The performance of TFT was deteriorated as the soft baking temperature increased. Therefore, it is important to remove the water-related defects well as organic impurities from the ZTO films during soft baking for fabrication of solution-derived high performance of TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.531-536
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• 2012

We herein present results of flat and uniform polymer-blended small molecular semiconductor thin films. Which were produced for organic thin film transistors (OTFTs), using a simple pre-metered horizontal dipping process. The organic semiconducting thin films were composed of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-PEN) composite blended with a polymer binder of poly(${\alpha}$-methylstyrene) (PaMS). We show that the pre-metered horizontal-dip-coating(H-dip-coating) process allowed the critical control of the thickness of the blended TIPS-PEN:PaMs thin film. The fabricated OTFTs using the TIPS-PEN:PaMs films exhibited maximum field-effect mobility of $0.22\;cm^2\;V^{-1}\;s^{-1}$. These results demonstrated that H-dip-coated TIPS-PEN:PaMS films show considerable promise for the production of reliable, reproducible, and high-performance OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.268-269
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• 2008

We have examined the effect of physical drying and annealing conditions for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs) in our special designed drying system; performances of the jetting-processed OTFTs can be improved more than 10 times just by optimizing the physical conditions of drying and annealing.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1154-1157
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• 2006

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using an organic patterning methodology. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly (9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique and is applicable for the larger area display.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.465-465
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• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.