• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.116-116
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$ film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Journal of Information Display
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• 제9권4호
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• pp.35-38
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• 2008

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with $15.3\AA$ interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 $cm^2$/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.175-178
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• 1988

A film is fabricated by depositing several sliced organic ultra thin films on a slide glass. Both UV-absorbance and the capacitance of a multi - layered organic ultra thin film with (N-docosyl pyridinium)-TCNQ(1:2) complex have a desired value on the condition of well alignment in depositing several layers. Forethermore the conductivity of this film measured by the direction of either horizontal or vertical axis. respectively, is results in a quite different value.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.243-246
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• 2008

Roll-printed organic thin-film transistors (OTFTs) were fabricated by gravure or flexography printing using patterned PDMS stamp with various channel lengths, silver pastes, coated polyvinylphenol dielectric, and jetted bis(triisopropyl-silylethynyl) pentacene semiconductor on plastic substrates. The roll-printed OTFT parameters were obtained: fieldeffect mobility of $0.1\;cm^2/Vs$, an on/off current ratio of $10^4$ and a subthreshold slope of 2.53 V/decade.

• 센서학회지
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• 제24권3호
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• pp.165-168
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• 2015

We demonstrated low-voltage organic thin-film transistors (OTFTs) with bilayer insulators, high-k polymer and low temperature crosslinkable polymer, on a flexible plastic substrate. Poly (vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and poly (2-vinylnaphthalene) are used for high-k polymer gate insulator and low temperature crosslinkable polymer insulators, respectively. The mobility of flexible OTFTs is $0.17cm^2/Vs$ at gate voltages -5 V after bending operation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1122-1124
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• 2009

Organic thin-film transistors (OTFTs) were fabricated by using the transfer patterning method. In order to remove Au pattern easily, UV-curable polymer mold was surface treated. Au source/drain (S/D) pattern was transferred to insulator-coated substrate surface. Fabricated OTFTs were compared to OTFTs using vacuum-deposited Au S/D. Additionally, transistor diodes were characterized.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.896-898
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• 2009

The printed electrodes of organic thin-film transistors (OTFTs) were fabricated by screen printing using nanoparticle silver pastes. The screen printed OTFT corresponds to channel lengths between 7.6 to 82.6 ${\mu}m$ (designed L=10 to 80 ${\mu}m$) on the $150{\times}150mm^2$ paper. The channel length deviations for 40 to 80 ${\mu}m$ patterns were less than 5 %. However, the channel lengths for 10 to 30 ${\mu}m$ patterns were increased by 20 %. The screen printed bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) OTFTs obtained had a field-effect mobility as large as 0.08 (${\pm}0.02$) $cm^2$/Vs, an on/off current ratio of $10^5$ and a subthreshold slope of 1.95 V/decade.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.72-76
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• 2020

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V^-1s^-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

• 공업화학
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• 제8권6호
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• pp.1022-1028
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• 1997

본 연구에서는 1M $LiClO_4/PC$ 유기 용액 중에 존재하는 리튬 이온의 층간 반응에 의하여 전기 발색 현상을 나타내는 전자-선 증발법으로 제조된 비정질의 텅스텐 산화물 박막과 전해질 계면에서의 전기화학적 특성들을 연구하기 위하여 음극 Tafel 분극법, 순환 전류-전위법 및 전기량 적정법 등의 전기화학 측정법과 X선 회절 분석법을 이용한 박막의 결정 상태 조사 등이 수행되었다. 특히 다중 순환 전류-전위 곡선으로부터 리튬 이온의 층간 반응은 발색 반응에 대한 인가 과전압이 약 1.0V 이내에서는 안정된 소 발색의 가역적 현상을 나타내었으나, 발색 반응에 대한 인가 과전압이 1.5V일 때는 발색 시 삽입된 박막 내부의 리튬이 소색 시 완전히 빠져 나오지 못하여, 박막 내부에 리튬이 축적되는 현상을 나타내었으며, 적은 순환 횟수임에도 불구하고 소 발색의 전류 밀도가 감소되는 것이 조사되어 발색에 필요한 인가 과전압의 한계가 존재함을 알 수 있었다.