• Title/Summary/Keyword: Organic substrates

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Fabrication Techniques for Carbon Nanotube Field Emitters by Screen Printing

  • Yi, Mann;Jung, Hyuk;Lee, Dong-Gu;Seo, Woo-Suk;Park, Jong-Won;Chun, Hyun-Tae;Koh, Nam-Je
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.655-657
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    • 2002
  • The carbon nanotube emitters for field emission displays were fabricated by screen printing techniques. The pastes for screen printing are composed of organic binders, carbon nanotubes, and some additive materials. Then the pastes were printed on Cr-coated/Ag-printed soda-lime glass substrates. From the I-V characteristics, the turn-on field of SWNT was lower than that of MWNT. The decrease in the mesh size of screen masks resulted in decreasing the turn-on field and increasing the electron emission current. When the carbon nanotubes were mixed with glass frit, glass frit appeared to contribute to the vertically aligning of carbon nanotubes on glass.

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Mixed-Island Formation and Electronic Structure of Metallo-Porphyrin Molecules on Au(111)

  • Kim, Ho-Won;Jeong, Gyeong-Hun;Gang, Se-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.303-303
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    • 2011
  • Orderings and electronic structures of organic molecules on metal substrates have been studied due to possible applications in electronic devices. In molecular systems, delocalized pi-electrons play important roles in the adsorption behaviors and electronic structures. We studied the adsorption and electronic structures of Co-Porphyrin molecules on Au(111) using scanning tunneling microscopy (STM) and spectroscopy (STS) at low temperature. Molecules form closely packed two-dimensional islands on Au(111) surface with two different types, having different shape evolutions in our energy-dependent STM observations. The Kondo resonance state, occurred by spin exchange interaction between the Co center atom and conduction electrons in the metal substrate, was observed in one type, while it was absent in the other type in scanning tunneling spectroscopy measurements. Possible origins of two molecular shapes will be discussed.

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Charge Transfer between Graphene and a Strong Electron Acceptor, Tetrafluorotetracyanoquinodimethane (F4-TCNQ)

  • Lee, Ji-Eun;Kim, Seon-Ho;Gang, Seong-Gyu;Yang, Seong-Ik;Ryu, Sun-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.458-458
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    • 2011
  • Graphene, a single atomic layer of sp2-bonded carbon, shows substantial potential for various applications. Chemical manipulation of its electronic properties will be of great importance. In this study, we have investigated interaction between graphene and organic molecular layer of tetrafluorotetracyanoquinodimethane (F4-TCNQ), a strong electron acceptor. F4-TCNQ films of varying thickness were evaporated onto graphene mechanically exfoliated on SiO2/Si substrates. F4-TCNQ molecules increase the frequencies of Raman G and 2D bands of graphene while decreasing the linewidth of G band and 2D/G intensity ratio, which is consistent with increase of hole density in graphene. These results exemplify the possibility of chemical tuning of electronic properties of graphene.

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Thermally Stable and Processible Norbornene Copolymers

  • Yoo Dong-Woo;Yang Seung-Jae;Lee Jin-Kyu;Park Joohyeon;Char Kookheon
    • Macromolecular Research
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    • v.14 no.1
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    • pp.107-113
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    • 2006
  • Processible norbornene copolymers were realized by judiciously designing norbomene comonomers, which were themselves prepared by the Diels-Alder reaction of cyclopentadiene and benzoquinone followed by the isomerization and alkylation of alcohols. The norbornene copolymers containing these derivatized comonomers, prepared by [Pd($x_{2}CH-{3} $)$_{4}$][$SbF_{6}$]$_{2}$ catalyst, exhibited excellent solubility in many organic solvents as well as good thermal stability, as evidenced by their high glass transition ($T_{g}$) and decomposition ($\∼$350$^{circ}C$) temperatures. In addition, fairly strong adhesion to substrates such as glasses and silicon wafers was also achieved with these copolymers to overcome the limitations experienced by polynorbornene homopolymers and to make them attractive for many important industrial applications.

Flexible Ultra-high Gas Barrier Substrate for Organic Electronics

  • Yan, Min;Erlat, Ahmet Gun;Zhao, Ri-An;Scherer, Brian;Jones, Cheryl;Smith, David J.;McConnelee, Paul A.;Feist, Thomas;Duggal, Anil
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.445-446
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    • 2007
  • The use of plastic substrates enables new applications, such as flexible display devices, and other flexible electronic devices, using low cost, rollto-roll (R2R) fabrication technologies. One of the limitations of polymeric substrate in these applications is that oxygen and moisture rapidly diffuse through the material and subsequently degrade the electro-optical devices. GE Global Research (GEGR) has developed a plastic substrate technology comprised of a superior high-heat polycarbonate (LEXAN(R)) substrate film and a unique transparent coating package that provides the ultrahigh barrier (UHB) to moisture and oxygen, chemical resistance to solvents used in device fabrications, and a high performance transparent conductor. This article describes the coating solutions for polycarbonate (LEXAN(R)) films and its compatibility with OLED device fabrication processes.

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Analysis of Low Power Consumption AMOLED Displays on Flexible Stainless Steel Substrates

  • Hack, Mike;Hewitt, Richard;Ma, Ray;Brown, Julie J.;Choi, Jae-Won;Cheon, Jun-Hyuk;Kim, Se-Hwan;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.58-61
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    • 2007
  • We present simulations and results to demonstrate the viability of stainless steel foil as a substrate for low power consumption, flexible AMOLED displays. Using organic planarization layers, we achieve very smooth surface properties, resulting in excellent TFT performance, that can be repetitively flexed without significantly affecting device performance. The use of phosphorescent OLEDs enables the design of low power consumption 40" AMOLED displays.

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Electron Spin Resonance from Mg-doped GaN Semiconductor Thin Films (Mg도핑된 GaN 반도체 박막의 전자스핀공명)

  • Park, Hyo-Yeol
    • Journal of the Semiconductor & Display Technology
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    • v.4 no.2 s.11
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    • pp.1-5
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    • 2005
  • Electon spin resonance measurements have been performed on the Mg-doped wurtzite GaN thin films grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The sample set included films as-grown with the regular Mg doped and Mg delta doped samples and the corresponding annealed ones. The resonance signal has been observed from the annealed Mg delta-doped sample with the Lande g value of 2.029. This indicates that the singlet resonance signal originates from the neutral Mg acceptor located at 0.24 eV above the valence band edge and 0.13 eV above the Fermi level because of the nuclear hyperfine spin 1=0 of Mg and the larger value than the free electron g=2.0023.

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Preparation of ZnO Thin Films Using Zn/O-containing Single Precursorthrough MOCVD Method

  • Park, Jong-Pil;Kim, Sin-Kyu;Park, Jae-Young;Ok, Kang-Min;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • v.30 no.1
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    • pp.114-118
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    • 2009
  • A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

Structural Properties of PZT(80/20) Thick Films Fabricated by Screen Printing Method

  • Lee, Sung-Gap;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.2
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    • pp.35-38
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    • 2005
  • Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.