• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.294-294
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• 2014

Developing magnetic thin films with desirable physical properties is a key step to promote research in spintronics. Organic-based magnetic material is a relatively new kind of materials which has magnetic properties in a molecular and microscopic level. These materials have been constructed by the coordination between 3d transition metal and organic materials producing long-range magnetic orders with a relatively high transition temperature. However, these materials were mostly synthesized as a form of powder, which is difficult to study for their physical properties as well as apply for electronic/spintronic devices. In this study, we have employed physical vapor deposition (PVD) to develop a new organic-based hybrid magnetic film that is achieved by the coordination of Fe and tetracyanoquinodimethane (TCNQ). The IR spectra of the grown film show modified CN vibration modes in TCNQ, which suggest a strong bonding between Fe and TCNQ. The thin film has both ferromagnetic and semiconducting behaviors, which is suitable for molecular spintronic applications. The high resolution photoemission (HRPES) spectra also show shift of 1s peak point of nitrogen and the carbon 1s peaks display traces of charge transfer from Fe to TCNQ as well as shake-up features, which suggest strong bonding and anti-bonding nature of coordination between Fe and TCNQ.

• Journal of Magnetics
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• 제15권4호
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• pp.185-189
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• 2010

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.