• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.51-56
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• 2006

Polymer light emitting diodes (PLEDs) with ITO/EDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by the spin coating method on ITO(indium tin oxide)/glass substrates. PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss] was used as light emitting polymer. PVK[poly(N-vinyl carbazole)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as the hole injection and transport materials. The effect of PFO-poss concentration and the heating temperatures on the electrical and optical properties of the devices were investigated. At the same concentration of PFO-poss solution, the current density and luminance of PLED device tend to increase as the annealing temperature increase from $100^{\circ}C$ to $200^{\circ}C$. The maximum luminance was found to be about 958 cd/m2 at 13V for the PLED device with 1.0 wt% PFO-poss at the annealing temperature of $200^{\circ}C$. In addition, the PLED device showed bluish white emission through the strong greenish peak with 523 nm in wavelength. As the concentration of PFO-poss increase from 0.5 wt% to 1.0 wt% and temperature of PLEDs increase from $100^{\circ}C$ to $200^{\circ}C$, the emission color tend to be shifted from blue with (x, y) = (0.17,0.14) to bluish white with (x, y) : (0.29,0.41) in CIE color coordinate.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1463-1464
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• 2011

An indium thin oxide(ITO) is used as a substrate material for organic light-emitting diodes(OLEDs) and organic photovoltaic cells. This study examined the effects of an $O_2$ plasma treatment on the electrical properties of an organic photovoltaic cell. The four probe method and Atomic force microscope(AFM) revealed the lowest surface resistance at the plasma treatment intensity of 250 [W] and the lowest average surface roughness of 2.0 [nm] at 250 [W]. The lowest average resistance of 17 [${\Omega}$/sq] was also observed at 250 [W] 40 [sec]. The $O_2$ plasma treatment device and a basic device in a structure of CuPc/C60/BCP/Al on ITO glass were fabricated by thermal evaporation, respectively. When the $O_2$ plasma treatment was used to the ITO, The experimental results revealed that the power conversion efficiency(PCE) indicated 65 [%] higher in the PCE than that without the plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.15-19
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• 2005

The organic light-emitting devices(OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100$\%$, compared to 25$\%$ in case of the fluorescent material [1]. Thus recently phosphorescent OLEDs have been extensively studied and showed higher internal quantum efficiency than conventional OLEDs. In this study, we have applied a new Ir complex as a red dopant and fabricated a red phosphorescent OLED on a flexible PC(Polycarbonate) substrate. Also, we have investigated the electrical and optical properties of the devices with a structure of A1/LiF/Alq3/(RD05 doped)BAlq/NPB/2-TNAIA/ITO/PC substrate. Our device showed the lightening efficiency of > 30 cd/A at an initial brightness of 1000 cd/$m^{2}$. The CIE(Commission Internationale de L'Eclairage) coordinates for the device were (0.62,0.37) at a current density of 1 mA/$cm^{2}$. In addition, although the sheet resistance of ITO films on PC substrate is higher than that on glass substrate, the flexible OLED showed much better lightening efficiency without much increase in operating voltage.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.260-264
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• 2012

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of IZO thin films intended for use as anode contacts in the organic light emitting diodes (OLED) devices. These IZO thin films were deposited on the PES film by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at room temperature. In order to investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon has been changed from 0.1 sccm to 0.5 sccm, respectively. All the IZO thin film has an (222) preferential orientation regardless of ambient gases. The electrical resistivity of the IZO film increased with increasing O2 flow rate, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly similar regardless of the H2 flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made with the configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al in order to elucidate the performance of the IZO substrate. The current density and the luminance of OLED devices with IZO thin films deposited in 0.5 sccm H2 ambient gas are the highest amongst all other films.

• Journal of Adhesion and Interface
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• v.24 no.3
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• pp.86-94
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• 2023

To fabricate all-solution-processed flexible Organic Light-Emitting Diodes (OLEDs), we demonstrated a bonding technology using a polyethyleneimine (PEI) as an adhesion layer between the two substrates. As the adhesion layer requires not only a high adhesion strength, but also a high current density, we have tried to find out the optimum condition which meets the two requirements at the same time by changing experimental factors such as PEI concentration, thickness of the layer and by mixing some additives into the PEI. The adhesion strength and the electrical current density were investigated by tensile tests and electron only device (EOD) experiments, respectively. The results showed that at higher PEI concentration the adhesion strength showed higher value, but the electrical current through the PEI layer decreased rapidly due to the increased PEI layer thickness. We added Sorbitol and PolyEthyleneGlycohol (PEG) into the 0.1 wt% PEI solution to enhance the adhesion and electrical properties. With the addition of the 0.5 wt% PEG into the 0.1 wt% PEI solution, the device showed an electrical current density of 900 mA/cm² and a good adhesion characteristic also. These data demonstrated the possibility of fabricating all-solution-processed OLEDs using two-substrate bonding technology with the PEI layer as an adhesion layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.540-542
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• 2008

By ETFOS software simulation to swiftly find out the shortcomings of the device structure and conserve the wastage of time cost in experiments, including the instruments deviations or human errors. Thereby we can calibrate the correct organic layer thickness by comparing the EL spectra with different NPB thicknesses.

• Vacuum Magazine
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• v.1 no.2
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• pp.24-29
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• 2014

Display is a key component in electronic devices. OLED is growing very fast recently due to the explosion of the smart phone market although still LCD is the dominating display technology in the display market at the moment. Also needs for the large area and high resolution TVs and flexible displays are increasing these days. Especially flexible display is expected to be one of the key technologies in mobile devices requiring small device size and large display size. Contrary to the conventional displays, flexible display requires organic materials for the substrate, the active driving element and also for the display element. Plastic film as a substrate, organic semiconductor as an active component of the transistor and organic light emitting materials or electronic paper as a display element are studied actively. In this article, mainly backplane technologies such as substrates and the transistor materials for flexible display will be introduced.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.