• Title/Summary/Keyword: Organic field-effect transsitros

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Fabrication of Organic Field-Effect Transistors with Low Gate Leakage Current by a Functional Polydimethylsiloxane Layer (PDMS 기능성 박막을 이용한 적은 게이트 누설 전류 특성을 가지는 유기트랜지스터의 제작)

  • Kim, Sung-Jin
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.147-150
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    • 2009

  • We present a technique for fabricating low leakage organic field-effect transistors by a functional polydimethylsiloxane (PDMS) layer. The technique relies on the photo-chemical process of conversion of the PDMS to a silicon oxide which provides the selective growth of pentacene thin films. The reduced gate leakage current showed ${\sim}10^{-10}$ A in a linear ($V_d=-5\;V$) and saturation ($V_d=-30\;V$) region at $V_g-V_t>0$.

  • https://doi.org/10.5757/JKVS.2009.18.2.147 인용 PDF KSCI