• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.202-202
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• 2008

The world gross market of many kinds of electronics, such as TV and mobile phone has been increasing rapidly these days. It is mainly caused by the amazing developments of IT technology during past decade and the changes of individual life style for the better. Thanks to the increases of electronics manufactured in quantity, much more electronic components such as MLCC (multi layer ceramic capacitor) and PCB (printed circuit board), which are our main products, have been needed as a consequence. Though it was reported that total market of electronic components exceeds several hundreds of billion dollars, there are many manufactures struggling for survival in the competition of electronics components. Then the recognition of quality as a key technology has spread and the efforts for high-yield production lines have been kept in many companies. In this paper, our efforts to eliminate the contamination of particles and the diffusion of some volatile organic compounds which is very harmful to workers at production line have been introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.184-184
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• 2008

저온 동시 소성 세라믹(LTCC, Low Temperature Co-firing) 기술 중에서 테이프 캐스팅(tape casting)은 얇고 균일한 세라믹 그린 쉬트를 연속 성형할 수 있으며 성형된 쉬트의 밀도, 표면상태, 두께제어 등이 매우 중요하다. 얇고 균일한 세라믹 그린 쉬트를 제작하기 위해서 슬러리의 분산성과 레오로지 특성은 매우 중요한 요소이며 첨가되는 유기물 첨가제들의 종류와 함량비는 슬러리의 분산성과 점도에 큰 영향을 미친다. 본 연구에서는 유기물 첨가제의 종류와 함량에 따른 슬러리의 점도와 그린 쉬트의 밀도 및 두께 제어에 미치는 영향을 고찰하였다. 바인더로는 acryl, polyvinyl 계를 사용하였으며, 가소제는 glycol, phatalate 계를 사용하였다. 각각 2 종류의 바인더와 가소제의 함량에 따른 레올로지 거동과 그런 쉬트의 밀도를 측정하였다. 각 조성별로 준비된 슬러리를 사용하여 테이프 캐스팅 방법으로 제작된 그린 쉬트의 두께를 측정하여 유기물 첨가제 조성이 그린 쉬트의 두께제어에 미치는 영향을 평가하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.19.1-19.1
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• 2010

The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.427-428
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• 2008

New high efficiency green light emitting phosphorescent devices with emission layers of [TCTA/TCTA:TAZ/TAZ]:Ir$(ppy)_3$ have been fabricated and evaluated in this paper. Among the devices having different thicknesses of TCTA:TAZ mixed layer in the total 300$\AA$-thick host of TCTA(80$\AA$)/TCTA:TAZ (50~100$\AA$)/TAZ, the device with host of TCTA(80$\AA$)/TCTA:TAZ(90$\AA$)/TAZ(130$\AA$) showed the best electroluminescent characteristics with the current density of 95 mA/$cm^2$ and luminance of 25,000 cd/$m^2$ at an applied voltage of 10V. The maximum current efficiency was 52 cd/A under the luminance of 400 cd/$m^2$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.36-45
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• 1992

The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.76-86
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• 2021

Technologies for lithium secondary batteries are now increasingly expanding to simultaneously improve the safety and higher energy and power densities of large-scale battery systems, such as electric vehicles and smart-grid energy storage systems. Next-generation lithium batteries, such as lithium-sulfur (Li-S) and lithium-air (Li-O₂) batteries by adopting solid electrolytes and lithium metal anode, can be a solution for the requirements. In this analysis of battery technology trends, solid electrolytes, including polymer (organic), inorganic (oxides and sulfides), and their hybrid (composite) are focused to describe the electrochemical performance achievable by adopting optimal components and discussing the interfacial behaviors that occurred by the contact of different ingredients for safe and high-energy lithium secondary battery systems. As next-generation rechargeable lithium batteries, Li-S and Li-O₂ battery systems are briefly discussed coupling with the possible use of solid electrolytes. In addition, Electronics and Telecommunications Research Institutes achievements in the field of solid electrolytes for lithium rechargeable batteries are finally introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.5
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• pp.217-222
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• 2023

The purpose of this paper was to synthesize a polymer organic hard mask that simplifies the manufacturing process, reduces process time significantly, and thereby lowers manufacturing costs. The results of measuring residual metals through vapor refining showed that 9-Naphthalen-1-ylcarbazole(9-NC) measured 101.75ppb in the 4th zone, 2-Naphthol (2-NA) measured 306.98ppb in the 5th zone, and 9-Fluorenone(9-F) measured between 129.05ppb across the 4th and 5th zones. After passing through a filtration system, the synthesized organic hard mask measured residual metals in the range of 9 to 7ppb. Additionally, the thermal analysis indicated a decrease of 2.78%, a molecular weight of 942, carbon content of 89.74%, and a yield of 72.4%. The etching rate was measured at an average of 18.22Å/s, and the coating thickness deviation was averaged at 1.19. For particle sizes below 0.2㎛ in the organic hard mask, no particles were observed. By varying the coating speed at 1,000, 1,500, and 1,800rpm and measuring the resulting coating thickness, the shrinkage rate ranged from 17.9% to 20.8%. The coating results demonstrated excellent adhesion to SiON, and it was evident that the organic hard mask was uniformly applied.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.1-5
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• 2009

A new pixel circuit for Active Matrix Organic Light Emitting Diodes (AMOLEDs), based on the polycrystalline silicon thin film transistors (Poly-Si TFTs), was proposed and verified by SMART SPICE simulation. One driving and six switching TFTs and one storage capacitor were used to improve display image uniformity without any additional control signal line. The proposed pixel circuit compensates an inevitable threshold voltage variation of Poly-Si TFTs and also compensates the degradation of OLED at low power supply voltage($V_{DD}$). The simulation results show that the proposed pixel circuit successfully compensates the variation of OLED driving current within 0.8% compared with 20% of the conventional pixel circuit.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.9-15
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• 2002

In this thesis, blue emission organic light emitting devices were fabricated by using vacuum deposition method. Two types of device were employed to realize blue emission. Type I had an emitting layer containing TPB-doped $Alq_3$ and type II had an emitting layer containing DPA-doped $Alq_3$. The variable dopant concentration was 0.5 ~2 wt%. The electrical and optical characteristics of these devices have been investigated. The more dopant concentration increased, the nearer the blue coordinate. Type I than type II had a lower turn on voltage and driving voltage. The emission luminescence of type II was brighter than that of type I. When we applied 15V to type II with DPA(2wt%)-doped $Alq_3$, we have achived the emission luminescence of 1282cd/$m^2$, the emission wavelength of 476nm and the blue emission CIE coordination of (0.1273, 0.0672)