• Title/Summary/Keyword: Organic electrode material

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Electrochemical Performance of Activated Carbon Electrode Materials with Various Post Treatments for EDLC (활성탄의 후 처리에 의한 EDLC 전극재의 전기화학 성능 개선)

  • Lee, Eunji;Kwon, Soon Hyung;Choi, Pooreum;Jung, Ji Chul;Kim, Myung-Soo
    • Korean Journal of Materials Research
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    • v.24 no.6
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    • pp.285-292
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    • 2014
  • Commercial activated-carbon used as the electrode material of an electric double-layer capacitor (EDLC) was posttreated with various acids and alkalis to increase its capacitance. The carbon samples prepared were then heat-treated in order to control the amount of acidic functional groups formed by the acid treatments. Coin-type EDLC cells with two symmetric carbon electrodes were assembled using the prepared carbon materials and an organic electrolyte. The electrochemical performance of the EDLC was measured by galvanostatic charge-discharge, cyclic voltammetry, and electrochemical impedance spectroscopy. Among the various activated carbons, the carbon electrodes (CSsb800) prepared by the treatments of coconutshell-based carbon activated with NaOH and $H_3BO_5$, and then heat treated at $800^{\circ}C$ under a flow of nitrogen gas, showed relatively good electrochemical performance. Although the specific-surface-area of the carbon-electrode material ($1,096m^2/g$) was less than that of pristine activated-carbon ($1,122m^2/g$), the meso-pore volume increased after the combined chemical and heat treatments. The specific capacitance of the EDLC increased from 59.6 to 74.8 F/g (26%) after those post treatments. The equivalent series resistance of EDLC using CSsb800 as electrode was much lower than that of EDLC using pristine activated carbon. Therefore, CSsb800 exhibited superior electrochemical performance at high scan rates due to its low internal resistance.

Solution Processable Ionic p-i-n OLEDs (습식 이온 도핑 p-i-n 구조 유기 발광 소자)

  • Han, Mi-Young;Oh, Seung-Seok;Park, Byoung-Choo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.11
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    • pp.974-979
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    • 2009
  • We studied solution-processed single-layered phosphorescent organic light-emitting diodes (PHOLEDs), doped with ionic salt and treated with simultaneous electrical and thermal annealing. Because the simultaneous annealing causes the accumulation of salt ions at the electrode surfaces, the energy levels of the organic molecules are bent by the electric fields due to the adsorbed ions, i.e., the simultaneous annealing can induce the proper formation of an ionic p-i-n structure. As a result, an ionic p-i-n PHOLED with a peak luminescence of over ${\sim}35,000\;cd/m^2$ and efficiency of 27 cd/A was achieved through increased and balanced carrier-injections.

The interfaces between Alq3 and ZnO substrates with various orientations

  • Lee, Jeong-Han;Lee, Yeon-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.343-343
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    • 2011
  • ZnO has been introduced as one of the good candidates for next generation opto-electronics. Recently, ZnO is known to be suitable for the transparent electrode in organic solar cells and light emitting devices. The contact with n-type organic material has been studied due to the n-type properties of ZnO. However, the surface of ZnO has shown different electronic property with respect to its surface orientation. Therefore, it is presumed that there are differences in the interfacial electronic structures between organic materials and ZnO with different orientation. Therefore, it is required to classify the interfacial electronic structures according to the surface orientation of ZnO. In this study, we measured the interfacial electronic structures between the ZnO substrate having various orientations and a typical n-type organic material, tris-(8-hydroxyquinoline) aluminum (Alq3). In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We found the changes in the electronic structures with respect to the orientation of ZnO substrate and it could be used to improve the contact between ZnO and Alq3.

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Characteristics of Carbon Nanotube Anode for flexible displays and characteristics of OLEDs fabricated on Carbon Nanotube Anode (플렉시블 디스플레이용 CNT 애노드 특성 및 이를 이용하여 제작한 플렉시블 OLED 특성 분석)

  • Kim, Han-Ki;Jung, Jin-A;Moon, Jong-Min
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.416-417
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    • 2007
  • We prepared flexible transparent conducting electrodes by spray coating of single-walled carbon nanotube (SWNT) networks on PET substrate and have demonstrated their use as transparent anodes for flexible organic light emitting diodes (OLEDs). The flexible CNT electrode produced by spray coating method shows relatively low sheet resistance ($150{\sim}220{\Omega}/sq.$) and high transmittance of ~60% even though it was prepared at room temperature. In addition, CNT electrode/PET sample exhibits little resistance change during 2000 bending cycles, demonstrated good mechanical robustness. Using transparent CNT electrode, it is readily possible to achieve performances comparable to commercial ITO-based OLEDs. This indicates that flexible CNT electrode is alternative anode materials for conventional ITO anode in flexible OLEDs.

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The Optimization of the Organic Passivation Process in the TFT-LCD Panel for LCD Televisions

  • Lee, Yeong-Beom;Jun, Sahng-Ik
    • Journal of Information Display
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    • v.10 no.2
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    • pp.54-61
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    • 2009
  • The results of the optimization of the organic passivation process for fabricating thin-film transistors (TFTs) with a high aperture ratio on a seventh-generation glass (2200${\times}$1870 mm) substrate for LCD-TV panels are reported herein. The optimization of the organic passivation process has been verified by checking various factors, including the material properties (e.g., thickness, stain, etching, thermal reflow) and the effects on the TFT operation (e.g., gate/data line delay and display-driving properties). The two main factors influencing the organic passivation process are the optimization of the final thickness of the organic passivation layer, and the gate electrode. In conclusion, the minimum possible final thickness was found to be $2.42{\um}m$ via simulation and pilot testing, using the full-factorial design. The optimization of the organic passivation layer was accomplished by improving its brightness by over 10 cd/$m^2$ (ca. 2% luminance) compared to that of the conventional organic passivation process. The results of this research also help reduce the reddish stain on display panels.

Electroluminescent Properties of BECCP/Alq3 Organic Light-emitting Diode (BECCP/Alq3 이중층을 이용한 전기 발광 소자의 특성 연구)

  • Lee, Ho-Sik;Yang, Ki-Sung;Shin, Hoon-Kyu;Park, Jong-Wook;Kim, Tae-Wan;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1050-1053
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    • 2004
  • Many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescence(EL) devices, since the first report of the light-emitting diodes based on Alq3. BECCP[bis(3-N-ethylcarbazolyl)cyanoterephthalidene] is a new luminescent material having cyano as an electron acceptor part and carbazole moiety as an electron donor part. The BECCP material shows blue PL and EL spectra of the device at about 480nm and in the ITO/BECCP/Al device shows typical rectifying diode characteristics. We have introduced Alq3 between the electrode and BECCP, and obtained more intensive rectifying diode characteristics in forward and reverse bias.

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Study on die electric characteristics of TIPS-pentacene transistors with variation of electrode thickness (소스/드레인 전극의 두께변화에 따른 TIPS-pentacene 트랜지스터의 전기적 특성 연구)

  • Yang, Jin-Woo;Hyung, Gun-Woo;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.323-324
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    • 2009
  • We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

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Organic-layer and reflectivity of transparent electrode dependent, microcavity effect of top-emission organic light-eitting diodes (TE-OLED의 유기물층과 반투명 음전극의 반사도에 따른 마이크로 캐비티 특성)

  • An, Hui-Chul;Na, Su-Hwan;Joo, Hyun-Woo;Mok, Rang-Kyun;Jung, Kyung-Seo;Chio, Seong-Jea;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.299-300
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    • 2009
  • We have studied an organic layer and semitransparent Al cathode thickness dependent optical properties for top-emission organic light-emitting diodes. Device structure is ITO(170nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(100nm) and Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total, organic layer was varied from 85nm to 165nm, a ratio of those two layers was kept to be about 2:3. Then it was compared with that of bottom devices. And a thickness of semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer thickness of 140nm. We were able to control the emission spectra from the top-emission organic light-emitting diodes.

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Property change of organic light-emitting diodes due to a SAM treatment of the ITO surface (ITO 표면의 SAM형 습식 개질에 의한 유기 발광 소자의 특성 변화)

  • Na, Su-Hwan;Joo, Hyun-Woo;An, Hui-Chul;Kim, Tae-Wan;Song, Min-Jong;Lee, Ho-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.314-315
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    • 2008
  • We have studied a property change of organic light-emitting diodes (OLED)s due to a surface reformation of indium-tin-oxide(ITO) substrate. An ITO is widely used as a transparent electrode in light-emitting diodes, and the OLEDs device performance is sensitive to the surface properties of the ITO. The ITO surface reformation could reduce the Schottky barrier at the ITO/organic interface and increase the adhesion of the organic layer onto the electrode. We have studied the characteristics of OLEDs with a treatment by a wet processing of the ITO substrate. The self-assembled monolayer(SAM) was used for wet processing. The characteristics of OLEDs were improved by SAM treatment of an ITO in this work. The OLEDs with a structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using seneral characterization techniques. Self-assembled monolayer introduced at the anode/organic interface gave an improvement in turn-on voltage, luminance and external quantum efficiency compared to the device without the SAM layer. SAM-treatment time of the ITO substrate was made to be 0/10/15/20/25min. The current efficiency of the device with 15min. treated SAM layer was increased by 3 times and the external quantum efficiency by 2.6 times.

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