• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• 한국재료학회지
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• 제11권10호
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• 대한화학회지
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• 제34권3호
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• pp.239-247
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• 1990

기체상 $S_N2$ 반응의 형태는 중성 2분자반응, 용매화반응, 이온반응 등으로 나눌 수 있으며, 메카니즘적으로 중성 2분자 반응은 retention 생성물을 만들며 이온반응은 inversion 생성물을 만든다. 한편 용매인 물 한 분자에 의하여 6- 중심 건이상태를 거치는 용매화반응의 경우는 친핵체(또는 이탈기)및 치환기에 의한 전자효과와 입체효과에 따라 두 생성물이 경쟁적으로 만들어진다. 여기에서 얻어진 결과를 이용하여 이온반응의 경우, 중앙 methly group을 매우 bulky 하게 하고 이탈기 능력을 크게 해줌과 동시에 음이온인 친핵체의 하전을 분산시켰을 때 inversion과 retention TS 사이의 에너지 차이가 아주 작게 나타났다. $S_N2$ 반응의 반응중심을 보다 더 큰 2주기 원소로 바꾸었을 때, 5가의 전이상태에 미치는 입체장애가 작아지므로 활성화에너지 장벽이 낮아진다. 반면, 같은 주기에서 원자의 크기가 작아지면 에너지 장벽은 올라간다. B원자의 경우 에너지 장벽이 가장 낮은데, 그것은 C와 N 원자보다도 더 크며 또한 4가의 전이상태를 이루므로 입체장애가 거의 무시되기 때문이다.

• 대한화학회지
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• 제34권1호
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• pp.37-43
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• 1990

$D_{2d}$ 점군에 속하는 강결정장의 tetragonally 일그러진 사면체 3$d^9$전자계 착물의 바닥상태에 대한 리간드 궤도함수의 spin-orbit coupling과 중심 금속의 3d와 4p궤도함수의 intermixing이 미치는 영향에 대하여 중첩 섭동론을 사용하여 연구하였다. 단결정 $Cs_2CuCl_4$의 tetragonally 일그러진 $CuCl_4^{2-}$에 대한 d-d전이의 실험값을 사용한 LCAO-MO분석은 구리이온과 리간드 사이의 공유결합성은 Cu 4p orbital의 기여가 증가하므로서 급격히 감소하고 리간드 Cl 3p궤도함수의 spin-orbit coupling 상호작용에 의한 바닥상태의 에너지 준위 분리에 대한 효과는 $\Gamma_7(E)\;\to\;\Gamma_6(E)\; >\;\Gamma_7(B_2)\;\to\;\Gamma_6(E)\; >\;\Gamma_7(B_2)\;\to\;\Gamma_7(E)$의 순서로 감소하였다.