• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.67.2-67.2
• /
• 2012

Graphene is expected to have a significant impact in various fields in the foreseeable future. For example, graphene is considered to be a promising candidate to replace indium tin oxide (ITO) as transparent conductive electrodes in optoelectronics applications. We report the tunability of the wavelength of localized surface plasmon resonance by varying the distance between graphene and Au nanoparticles [1]. It is estimated that every nanometer of change in the distance between graphene and the nanoparticles corresponds to a resonance wavelength shift of ~12 nm. The nanoparticle-graphene separation changes the coupling strength of the electromagnetic field of the excited plasmons in the nanoparticles and the antiparallel image dipoles in graphene. We also show a hysteresis in the conductance and capacitance can serve as a platform for graphene memory devices. We report the hysteresis in capacitance-voltage measurements on top gated bilayer graphene which provide a direct experimental evidence of the existence of charge traps as the cause for the hysteresis [2]. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found [3]. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching.

• Proceeding of EDISON Challenge
• /
• 2016.03a
• /
• pp.373-376
• /
• 2016

Transition metal dichalcogenides (TMDs) such as $MoS_2$ is the thinnest semiconductor, exhibits promising prospects in the applications of optoelectronics, catalysis and hydrogen storage devices. Uniform and high quality $MoS_2$ is highly desirable in large area for its applications on commercial scale and fundamental research. Many experimental techniques i.e CVD have been developed to successfully synthesis $MoS_2$ on large scale, here in this work atomistic detail to understand the growth mechanism is addressed which was greatly overlooked. Here based on first principles calculation we found that polarity of seeding promter (crystal violet considerd in this work) controls the growth mechanism. It is also found that molybdenum destroys the precursor while sulfur adsorption with precursor is favorable.

• Journal of the Korean Physical Society
• /
• v.73 no.11
• /
• pp.1735-1743
• /
• 2018

Excitons are the most prominent features of the optical properties of monolayer transition-metal dichalcogenides(TMDC). In view of optoelectronics it is very important to understand the decay mechanisms of the excitons of these materials. Auger recombination of excitons are regarded as one of the dominant decay processes. In this paper the Auger constant of recombination is computed based on the approach proposed by Kavoulakis and Baym. We obtain both temperature dependent (from type A, A' processes) and temperature independent (from type B, B' processes) contributions, and a numerical estimate of theoretical result yields the value of constant in the order of $10^{-2}cm^2s^{-1}$, being consistent with existing experimental data. This implies that Auger decay processes severely limit the photoluminescence yield of TMDC-based optoelectronic devices.

• Journal of Sensor Science and Technology
• /
• v.32 no.4
• /
• pp.252-256
• /
• 2023

A one-step method for nanoscale patterning of silver ionic ink on a substrate is developed using a microscale, elastic mold deformation. This method yields unique micro/nanoscale metallic structures that differ from those produced using the original molds. The linewidth of these metallic structures is significantly reduced (approximately 10 times) through the sidewall deformation of the original mold cavity on a thin liquid film, as verified by finite element analysis. The process facilitates the fabrication of various, isolated and complex micro/nanoscale metallic structures with negligible residual layers at low cost and high throughput. These structures can be utilized for various applications, including optoelectronics, wearable sensors, and metaverse-related devices. Our approach offers a promising tool for manipulation and fabrication of micro/nanoscale structures of various functional materials.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.2
• /
• pp.64-68
• /
• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.125.2-125.2
• /
• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.34-42
• /
• 1997

Hg-Te-CdTe superlattices have received much interests over the last several years as a potential material for its applications for detecting devices and optoelectronics. We have grown the HgTe-CdTe superlattice using MBE. in our lab. We have carried out DCRC spectroscopy after growth of HgTe-CdTe superlattice with varying the superlattice periods and controlling the barrier thickness and we have that the presence of the main peak and the satellite peaks. We obtained 20 arcsec of FWHM over 100 periods of superlattice. We also note that high peak intensity shows the high quality of the sample and each layer of superlattice has abrupt interfaces. The angular separation between the main peak(m=0) and the first satellite peak(m=$\pm$1) is increased when the barrier layer thickness in superlatice layers are decreased. The separation between the first setellite peak(m=$\pm$1) and the second satellite peak(m$\pm$2) is increased similarly. The number of the satellite peak is a qualitative measure of the interfacial abruptness of the superlattice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.320-320
• /
• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• Journal of Sensor Science and Technology
• /
• v.30 no.5
• /
• pp.279-285
• /
• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.

• Current Optics and Photonics
• /
• v.5 no.4
• /
• pp.384-390
• /
• 2021

This paper presents a wide-range tunable wavelength-locking technology based on optoelectronic oscillation (OEO) loops for optical fiber sensors and microwave photonics applications, explains the theoretical fundamentals of the design, and demonstrates a method for locking the relative wavelength differences between a leader semiconductor laser and its follower lasers. The input of the OEO loop in the proposed scheme (the relative wavelength difference) determines the radio-frequency (RF) signal frequency of the oscillation output, which is quantized into an injection current signal for feedback to control the wavelength drift of follower lasers so that they follow the wavelength change of the leader laser. The results from a 10-hour continuous experiment in a field environment show that the wavelength-locking accuracy reached ±0.38 GHz with an Allan deviation of 6.1 pm over 2 hours, and the wavelength jitter between the leader and follower lasers was suppressed within 0.01 nm, even though the test equipment was not isolated from vibrations and the temperature was not controlled. Moreover, the tunable range of wavelength locking was maintained from 10 to 17 nm for nonideal electrical devices with limited bandwidth.