• Fibers and Polymers
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• v.2 no.1
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• pp.135-139
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• 2001

Poly(hydroxamic acid) resin beads were prepared and complexed with various metal ions. We used IR spectroscopy to investigate the structure of metal complex. It proved that the products formed by introduction of metal ions gave stable and colored complex. It was found that the resin bead as synthesized would be a good column packing material for continuous extraction. Energy dispersive spectroscopy was use to study the distribution of metal ions in the resin matrix. It could be tentatively concluded that adsorption and diffusion of metal ions in the chelating resins mainly depended on the loading of the resin matrix which indicated interacting sites with metal ions.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.5
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• pp.99-103
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• 2012

Presently, A glass is widely used in telecommunication system, optoelectronic devices and micro electro mechanical systems. Micro drilling of glass using the laser can save processing cost and improve the accuracy. This paper experiments micro drilling using KrF excimer laser on the pyrex glass of $500{\mu}m$ thickness. We have experiment to find out optimum laser machining conditions of micro drilling of glass and ablation depth and influence by processing parameter suc'h pulse repetition rate, energy density and number of pulses. Pulse repetition rate don't influence ablation depth at the micro drilling of pyrex glass. Energy density influence micro drilling of parallelism and maximum thickness that can be drilled. Ablation depth is most influenced by number of pulses.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.4-5
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• 2004

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.230-232
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• 2006

Eutectic Au-20Sn solder has been widely used for optoelectronic packages because of fluxless soldering process and thus are particularly valuable for many applications such as biomedical, photonic, and MEMS devices that can not use any flux. Also when good joint strength, superior resistance to corrosion, whisker-free, and good thermal conductivity are demanded, eutectic Au-20Sn solder can be satisfied with above-mentions best. In this study, we tried to know the interfacial reactions between Au-20Sn solder and Cu substrate with or without ENIG plating layer In the results, Au-Cu-Sn ternary phases were formed at the Au-20Sn/Cu substrate, and Au-Ni-Sn, Au-Ni-Cu-Sn phases were formed at the Au-20Sn/ENIG substrate.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.298-303
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• 2001

The critical thickness of an epitaxial film on a substrate in electronic or optoelectronic devices is studied on the basis of equilibrium dislocation analysis. Two geometric models, a single dislocation and an array of dislocations in heteroepitaxial system, are considered respectively to calculate the misfit dislocation formation energy. The isotropic linearly elastic stress fields for the models are obtained by means of complex potential method combined with alternating technique, and are used for calculating the formation energies. As a result, the effect of elastic mismatch between film and substrate on critical thickness is presented and $Si_xGe_{1-x}/Si$ epitaxial structure is analyzed to predict the critical thickness with varying germanium concentration.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.135.1-135.1
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• 2014

Silicon nanoparticles can be synthesized in a standard radio-frequency glow discharge system at low temperature (${\sim}200^{\circ}C$). Plasma synthesis of silicon nanoparticles, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Hydrogenated polymorphous silicon (pm-Si:H) has a peculiar microstructure, namely a small volume fraction of plasma synthesized silicon nanoparticles embedded in an amorphous matrix, which originates from the unique deposition mechanism. Detailed discussion on plasma synthesis of silicon nanoparticles, growth mechanism and photovoltaic application of pm-Si:H will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.392.1-392.1
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• 2014

Isoindigo based small molecules have attracted much attention in the field of optoelectronic devices due to their broad absorbance and high charge carrier mobilitiies. Herein, we investigate the field effect transistor characteristics of a series of isoindigo based donor-acceptor-donor (D-A-D) small molecules containing a variable number of thiophene moieties (named IDT, ID2T, and ID3T) which form pi-bridges between the D and A moieites and a different donor moiety (IDED). In order to improve the carrier mobility, 1-chloronaphthalene (CN) and 1,8-diiodooctane (DIO) as solvent additives were used. The film morphology, crystallinity and optical properties of the materials processed with various concentrations of solvent additives were investigated through atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-vis absorption spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.51-52
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• 2005

Phosphorus doped ZnO thin films on (001) $Al_2O_3$ substrate have been prepared by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. After deposition, phosphorus doped ZnO thin films have been annealed in vacuum, air, nitrogen, and oxygen ambients using pulsed Nd:YAG laser. We report the electrical properties of phosphorus doped ZnO thin films with the variation of the laser annealing conditions for the applications of optoelectronic devices.