• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.91-95
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• 2022

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×10²¹ cm^-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10^-3 Ω^-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.