• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of Radiation Protection and Research
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• v.37 no.1
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• pp.10-15
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• 2012

Design and performance test results of a newly developed optically stimulated luminescence (OSL) measurement system are presented in this paper. Generally, different types of optical filters are used in OSL reader system to minimize the interference of the stimulation light in the OSL signal. For optically stimulation of $Al_2O_3:C$, we have arrived at an optimal combination of the filters, i.e., GG420 filter for filtering the stimulating light source, and a combined UG11 and BG39 filter at the detecting window (PMT). By using a high luminance blue LED (Luxeon V), sufficient luminous intensity could be obtained for optically stimulation. By using various control boards, the OSL reader device was successfully interfaced with a personal computer. A software was developed to deliver required commands to operate the OSL reader by using the LabView program (National Instruments, Inc.). In order to evaluate the reliability and the reproducibility of newly designed-OSL reader. Performance testing of the OSL reader was carried out for OSL efficiency, OSL decay curve and signal to noise ratio of the standard $Al_2O_3:C$ OSL material. It was found to be comparable with that of commercial Riso reader system.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.87-103
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• 2008

In recent years, the field of THz photonics based on THz pulse technology has gained tremendous, world-wide interest as a new exciting research subject. With a possibility of many commercial applications as well as fundamental scientific achievements in the field, many advanced nations are stepping up their effort in advancing the field of THz photonics. This fact is supported by the observation of the significant increase in the number of papers on THz pulse technology presented in renowned international journals and conferences. The subject that is interesting for the THz application is the development of THz pulse sources and detectors, and other passive devices. In this paper, we present a brief review on some of the key devices and their relavant measurement techniques such as THz photoconductive antennas, optical rectification, difference frequency geneneration with quasi-phase matching structures, electro-optic sampling, high speed real time measurements, THz transmission lines, and other various waveguide structures.

• Korean Journal of Optics and Photonics
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• v.18 no.4
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• pp.264-269
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• 2007

Today's research has been focused on changing the light source from filament to LED for luminarie illumination to overcome the shortcoming of a filament. The purpose of this research is to make an appropriate high power LED package structure for luminarie. We simulated radiation patterns of the various structures by the ray tracing simulator (Light Tools), and also analyzed the radiation patterns using an LED test system (OL770). As we increased an inner reflector angle, the radiation pattern split into two peaks and the angle between two peaks became larger. In addition, when we increased an outer reflector angle, the angle between side peaks gradually decreased, while it increased again when the angle reach $50^{\circ}$. These results could be understood from the ray tracing of the light reflected from two reflectors. We made the high power LED package for luminarie on the condition of the optimized structure which was made by ray tracing simulation results, and we measured the radiation patterns by using an LED test system, and these results were well matched to the simulation results.

• Korean Journal of Optics and Photonics
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• v.29 no.5
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• pp.204-214
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• 2018

Since LIDAR is advantageous for accurate information acquisition and realization of a high-resolution 3D image based on characteristics that can be precisely measured, it is essential to autonomous navigation systems that require acquisition and judgment of accurate peripheral information without user intervention. Recently, as an autonomous navigation system applying LIDAR has been utilized in human living space, it is necessary to solve the eye-safety problem, and to make reliable judgment through accurate obstacle recognition in various environments. In this paper, we construct a single-shot LIDAR system (SSLs) using a 1550-nm eye-safe light source, and report the analysis method and results of LIDAR signals for various measurement environments, reflective materials, and material angles. We analyze the signals of materials with different reflectance in each measurement environment by using a 5% Al reflector and a building wall located at a distance of 25 m, under indoor, daytime, and nighttime conditions. In addition, signal analysis of the angle change of the material is carried out, considering actual obstacles at various angles. This signal analysis has the merit of possibly confirming the correlation between measurement environment, reflection conditions, and LIDAR signal, by using the SNR to determine the reliability of the received information, and the timing jitter, which is an index of the accuracy of the distance information.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.4
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• pp.336-341
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• 2013

In this paper, the design concept of a low-temperature vacuum blackbody was described, and thermophysical model of the blackbody was numerically evaluated. Also the working performance of low-temperature vacuum blackbody was evaluated using infrared camera system. The blackbody system was constructed to operate under high-vacuum conditions ($2.67{\times}10^{-2}$ Pa) to reduce temperature uncertainty, which is caused by vapor condensation at low temperatures usually below 273 K. In addition, both heat sink and heat shield including cold shield were installed around radiator to prevent heat loss from the blackbody. Simplified mathematical model of blackbody radiator was analyzed using modified Stefan-Boltzmann's rule. The infrared radiant performance of the blackbody was evaluated using infrared camera. Based on the results of measurements, and simulation, temperature stability of the low-temperature vacuum blackbody demonstrated that the blackbody system can serve as a highly stable reference source for the calibration of an infrared optical system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.45-50
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• 2015

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.