• Journal of the Korean Institute of Landscape Architecture
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• v.36 no.4
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• pp.15-26
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• 2008

The purpose of this study is to attempt to interpret golf courses as event-generating spaces with consideration given to the time factor. Through a golf game, a variety of events such as the tee shot, second shot, putt, and hole out are generated. These events have been connected to a series of events after hole out such as birdie, par, bogey and so on. The series of events do not always occur in the same way. They reveal unexpected changes over time. These unexpected changes cause changes in the spatial characteristics and offer unforgettable memories for golfers. Gilles Deleuze mentioned the spatial characteristics as striated space and smooth space. Striated space can be defined as sedentary space. It is distant vision-optical space that has dimensional, metric and centered characteristics, whereas smooth space is defined as nomadic, close vision-haptic space that has directional and acentered characteristics. This study focused on the analysis of spatial characteristics according to striated space and smooth space. Golf courses generally show the characteristics of striated space before beginning the game. As soon as the game begins, however, the golf courses are converted into an event-generating space. The characteristics of striated space are transformed into smooth space, a nomadic space that amplifies the dynamic, changeable, de-scaled and non-metric system. Through the whole game, this transformation is dramatically repeated. On the other hand, the golfer, the subject of the game, senses the phenomenological experience in the process of orientation, center, definition, and domestication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Korean Institute of Landscape Architecture
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• v.42 no.2
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• pp.1-9
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• 2014

This study is the renovation plan for BIFF(Busan International Film Festival) street themed movies, which is an internationally known film festival. The aim of this is the regional economic vitalization. The first step of the plan sets up position through the case study of the Theme Street. The theme for each road space is related with movies and realizes the unificative images for each road. Images between the Busan Cinema Center and BUSAN MARINA are introduction of the road and the subject of this road is greeting with movies. The history of movies are printed on the pavement, some sections are made with red blocks for recollecting the red carpet. The next section from the BUSAN MARINA to MARINE CITY is set up being close with movies. In this section, sculptures of filmmaking and theme benches are installed for indirect experiences. The theme from MARINE CITY to DONGBAEK ISLANDS is playing and enjoying with movies. It is made more fun with the installation of super graphic and trick art. The theme from DONGBAEK ISLANDS to HAEUNDAE is farewell with movies. It is expressed by music on pavement and musical fountain. The last section in the theme road from HAEUNDAE to MOONTAN ROAD shows the concept memories after farewell. It is a half way to Moonten Road. The Milky Way pavement and Milky Way square are made by installing the optical fibers.