• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.4
• /
• pp.402-406
• /
• 1988

The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.36-36
• /
• 2008

Organic light-emitting device (OLED) have become very attractive due to their potential application in flat panel displays. One important problem to be solved for practical application of full-color OLED is development of three primary color (Red, Green and Blue) emitting molecule with high luminous operation. Particularly, the development of organic materials for blue electroluminescence (EL) lags significantly behind that for the other two primary colors. For this reason, Flu-Si was synthesized and characterized by means of high-resolution mass spectro metry and elemental analyses. Flu-Si has the more wide optical band gap (Eg = 3.86) than reference material (Cz-Si, Eg = 3.52 eV). We measured the photophysical and electrochemical properties of Flu-Si. The HOMO-LUMO levels were estimated by the oxidation potential and the onset of the UV-Vis absorption spectra. The EL properties were studied by the device fabricated as a blue light emitting material with FIrpic.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.2
• /
• pp.117-123
• /
• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.228-231
• /
• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

• Journal of the Korean institute of surface engineering
• /
• v.25 no.5
• /
• pp.271-281
• /
• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.4
• /
• pp.196-201
• /
• 2002

The $AgInS_{2}$ epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurements, a temperature dependence of the energy band gap on $AgInS_{2}/GaAs$ was found to be $Eg(T)=2.1365eV-(9.89{\times}10^{-3}eV)T^{2}/(2930+T)$. After the as-grown $AgInS_{2}/GaAs$ was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of $AgInS_{2}/GaAs$ has been investigated by using photoluminescence measurements at 10 K. The native defects of $V_{Ag},\;V_{S},\;Ag_{int}$ and $S_{int}$ obtained from photoluminescence measurements were classified as donors or accepters. It was concluded that the heat-treatment in the S-atmosphere converted $AgInS_{2}/GaAs$ to an optical p-type. Also, it was confirmed that In in $AgInS_{2}/GaAs$ did not form the native defects because In in $AgInS_{2}$ did exist in the stable form.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.57-57
• /
• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.823-827
• /
• 2001

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of Eg(T)=2.1365 eV-(9.89${\times}$10$\^$-3/ eV)T$^2$/(2930+T). After the as-grown AgInS$_2$/GaAs was annealed in Ag-,S-, and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V$\_$Ag/, V$\_$s/, Ag$\_$int/, and S$\_$int/ obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did net from the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• The Korean Journal of Ceramics
• /
• v.4 no.2
• /
• pp.103-113
• /
• 1998

By using a gas-tight electrochemical cell, we can perform high-temperature coulometric titration and measure electronic transport properties to determine the elecronic defect structure of metal oxides. This technique reduces the time and expense required for conventional thermogravimetric measurements. The components of the gas-tight coulometric titration cell are an oxygen sensor, Pt/yttria stabilitized zirconia(YSZ)/Pt, and an encapsulated metal oxide sample. Based on cell design, both transport and thermodynamic measurements can be performed over a wide range of oxygen partial pressure ($pO_2=10^{-35}$ to 1 atm). This paper describes the high-temperature gas-tight electrochemical cells used to determine electronic defect structures and transport properties for pure and doped-oxide systems, such as YSZ, doped and pure ceria $(Ca-CeO_2 \;and\; CeO_2)$, copper oxides and copper-oxide-based ceramic superconductors, transition metal oxides, $SrFeCo_{0.5}O_x,\; and \;BaTiO_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.398.1-398.1
• /
• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.